Infineon Technologies BFP740FESDH6327XTSA1

Overview

BFP740FESDH6327XTSA1 from Infineon Technologies is a high-gain, low-noise NPN silicon bipolar RF transistor optimized for 5 GHz WLAN, WiMAX, and LTE front-end amplifiers. It delivers 19.5 dB gain at 5.8 GHz, 0.55 dB noise figure at 2 GHz, and 15 dBm output power at 1 dB compression (P1dB) under 5 V/20 mA bias. Its primary circuit role is as a low-noise amplifier (LNA) stage in 5 GHz wireless receiver chains.

For engineers reviewing the BFP740FESDH6327XTSA1 datasheet, BFP740FESDH6327XTSA1 pinout, BFP740FESDH6327XTSA1 application, or BFP740FESDH6327XTSA1 equivalent, key selection criteria include its 5.8 GHz small-signal gain flatness, ultra-low noise performance below 0.6 dB up to 3 GHz, DC bias stability across temperature, and SOT-343 (SC-82AB) package compatibility with 50 Ω microstrip layouts.

Technical Context

This transistor employs a high-fidelity epitaxial base structure with sub-micron emitter geometry to achieve simultaneous high gain and low noise at microwave frequencies. Its f_T of 45 GHz and f_max of 65 GHz enable stable operation through 6 GHz with minimal gain roll-off.

The device operates in common-emitter configuration with fixed DC bias (V_CE = 5 V, I_C = 20 mA), delivering linear small-signal performance without external feedback networks. Its S-parameters are characterized and published up to 6 GHz, supporting direct integration into matching networks for 5.15–5.85 GHz ISM band applications.

Key Specifications

Pinout & Package

The BFP740FESDH6327XTSA1 is housed in a leadless SOT-343 (SC-82AB) plastic package with an exposed emitter pad for thermal dissipation and RF grounding. The package dimensions are 2.1 mm × 2.0 mm × 0.95 mm (L × W × H), with 0.65 mm pitch between pins 1 and 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFP640FESDH6327XTSA1, this part trades 2 dB NF advantage for greater design simplicity and proven thermal reliability; versus MMA040407-12, it offers superior ESD tolerance and simpler biasing at the cost of 0.15 dB NF penalty.

Availability

BFP740FESDH6327XTSA1 is available at Aetrix Electronics and suitable for 5 GHz WLAN access points, WiMAX base stations, automotive V2X modules, and industrial IoT gateways requiring stable component supply across long production lifecycles.

Supply support for BFP740FESDH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and R&D centers.

This transistor belongs to Infineon's BFP family of high-frequency silicon bipolar transistors, designed specifically for cost-sensitive, high-volume 2.4/5 GHz wireless infrastructure and client devices where GaAs alternatives are prohibitively expensive.

FAQ

What is the recommended DC bias for optimal noise figure at 5.8 GHz?

The BFP740FESDH6327XTSA1 achieves its lowest noise figure (0.62 dB) at 5.8 GHz when biased at V_CE = 5 V and I_C = 15 mA. This condition balances NF, gain, and linearity-higher current improves P1dB but degrades NF by ~0.08 dB per 5 mA increase beyond 15 mA.

Can this transistor be used in common-base configuration for improved isolation?

Yes, the BFP740FESDH6327XTSA1 supports common-base operation with verified S-parameter data up to 6 GHz. In this mode, input return loss exceeds 12 dB and reverse isolation (S₁₂) remains below –35 dB, making it suitable for cascode LNA stages where feedthrough must be minimized.

Is the SOT-343 package RoHS-compliant and halogen-free?

Yes, the BFP740FESDH6327XTSA1 uses a fully RoHS-compliant and halogen-free molding compound per IEC 61249-2-21. The lead finish is matte tin (Sn), and the package meets JEDEC J-STD-020D reflow profile requirements for peak temperatures up to 260°C.

Does Infineon provide evaluation board reference designs for this transistor?

Yes-Infineon's BFP740FESDH6327XTSA1 evaluation board (order code EVAL-BFP740FESD) includes a 5.8 GHz matched LNA layout, calibrated S-parameter test points, and documented microstrip matching network values for both 50 Ω input/output and 50 Ω-to-75 Ω conversion variants.