Infineon Technologies BFP740FH6327XTSA1

Overview

BFP740FH6327XTSA1 from Infineon is a SiGe:C NPN RF heterojunction bipolar transistor (HBT) optimized for low-noise, high-gain amplification in 50 Ω systems up to 5.5 GHz. It delivers NFmin = 1 dB at 5.5 GHz/3 V/6 mA, Gms = 21 dB at 5.5 GHz/3 V/15 mA, and OIP3 = 24 dBm at 5.5 GHz/3 V/15 mA, targeting front-end LNA stages in GNSS receivers and WLAN infrastructure.

For engineers reviewing the BFP740FH6327XTSA1 datasheet, BFP740FH6327XTSA1 pinout, BFP740FH6327XTSA1 application, or BFP740FH6327XTSA1 equivalent, key selection criteria include noise figure vs. frequency, gain flatness across 0.45–5.5 GHz, OIP3 linearity at 15 mA bias, and TSFP-4-1 thermal performance under industrial temperature cycling.

Technical Context

This HBT employs silicon-germanium carbon (SiGe:C) base technology to achieve fT = 45 GHz and CCB = 0.12 pF at VCB = 3 V, enabling wideband operation with minimal parasitic capacitance. Its emitter-base junction is optimized for low VEB(on) and high hFE (160–400), supporting stable DC biasing in cascaded amplifier topologies.

The device operates with VCE = 3 V and IC = 6–15 mA, delivering monotonic degradation in NFmin (0.4–0.8 dB) and Gms (32–15.5 dB) from 450 MHz to 5.5 GHz. Thermal resistance RthJS = 300 K/W ensures safe operation up to TJ = 150 °C when soldered per TSFP-4-1 footprint guidelines.

Key Specifications

Pinout & Package

Package: TSFP-4-1 - ultra-miniature surface-mount plastic package with 0.5 mm pitch, designed for RF matching and thermal dissipation via exposed emitter pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF transistor applications.

Compared with BFP640F and NE85633, BFP740FH6327XTSA1 uniquely balances sub-1 dB NFmin, 21 dB Gms, and 24 dBm OIP3 at 5.5 GHz within an industrial-qualified TSFP-4-1 package-making it optimal for high-performance, thermally constrained GNSS and 5 GHz WLAN front ends.

Availability

BFP740FH6327XTSA1 is available at Aetrix Electronics and suitable for GNSS navigation receivers, 5 GHz WLAN infrastructure, and satellite radio LNBs requiring stable component supply across industrial temperature ranges and multi-year production cycles.

Supply support for BFP740FH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in SiGe RF transistor technology since 2005.

The BFP740F belongs to Infineon's high-frequency SiGe:C HBT product line, engineered specifically for ultra-low-noise, wideband RF amplification in consumer and industrial wireless infrastructure.

FAQ

What is the recommended DC bias for optimal noise figure at 5.5 GHz?

For minimum noise figure at 5.5 GHz, bias the BFP740FH6327XTSA1 at VCE = 3 V and IC = 6 mA. This condition yields NFmin = 1 dB with associated gain Gass = 14 dB, as verified in Table 12 of the official Infineon datasheet v3.0. Base current IB is approximately 24 µA under this bias.

Can BFP740FH6327XTSA1 replace BFP640F in existing 2.4 GHz LNA designs?

Yes, BFP740FH6327XTSA1 is pin-compatible with BFP640F in TSFP-4-1 and shares identical pinout (B-E-C-E). At 2.4 GHz, its NFmin = 0.6 dB and Gms = 24.5 dB meet or exceed BFP640F's specs, though its higher fT may require minor output matching adjustment for optimal stability.

What PCB layout practices minimize thermal resistance for this device?

To achieve the rated RthJS = 300 K/W, connect both emitter pins (2 and 4) directly to a ≥8 mm² internal or bottom-side copper pour using ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). Avoid solder mask over the emitter pad area and maintain ≥0.2 mm clearance from adjacent signal traces.

Is BFP740FH6327XTSA1 suitable for Class A power amplifier applications?

No-BFP740FH6327XTSA1 is characterized and qualified exclusively as a low-noise amplifier transistor. Its absolute maximum collector current is 45 mA and total power dissipation is limited to 160 mW, making it unsuitable for Class A PA operation where sustained >100 mW dissipation is typical.