Infineon Technologies BFP760H6327XTSA1

Overview

BFP760H6327XTSA1 from Infineon is a SiGe:C NPN RF heterojunction bipolar transistor (HBT) optimized for low-noise, high-gain amplification in 0.9–5.5 GHz front-end stages. It delivers NFmin = 0.95 dB at 5.5 GHz/3 V/10 mA, Gms = 16.5 dB at 5.5 GHz/3 V/30 mA, and OIP3 = 27 dBm at same bias-enabling high-sensitivity receiver LNA design in GNSS and WLAN modules.

For engineers reviewing the BFP760H6327XTSA1 datasheet, BFP760H6327XTSA1 pinout, BFP760H6327XTSA1 application, or BFP760H6327XTSA1 equivalent, key selection criteria include noise figure vs. frequency trade-offs, SOT343 thermal resistance (RthJS = 230 K/W), DC current gain (hFE = 160–400), and ESD-sensitive handling per JESD22-A114.

Technical Context

This HBT employs silicon-germanium carbon (SiGe:C) base technology to achieve fT = 45 GHz and high Early voltage, supporting stable wideband gain up to 5.5 GHz under 3 V bias. Its emitter-base capacitance (CEB = 0.65 pF) and collector-base capacitance (CCB = 0.13–0.2 pF) are tightly controlled for predictable matching in 50 Ω RF layouts.

The device operates with VCEO = 4.0 V (open base), IC ≤ 70 mA, and Ptot = 240 mW at TS ≤ 95 °C. It is qualified per JEDEC JESD47/JESD22 and AEC-Q101, confirming robustness for industrial and automotive-grade RF subsystems requiring long-term reliability under thermal cycling and humidity stress.

Key Specifications

Pinout & Package

Package: SOT343 - surface-mount plastic package with 4 terminals, 1.3 mm × 1.3 mm footprint, 0.95 mm height, and exposed emitter pad for thermal enhancement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF transistor applications.

Compared with BFP640H6327XTSA1 and NE85633, the BFP760H6327XTSA1 uniquely balances sub-1 dB NF, >27 dBm OIP3, and AEC-Q101 compliance in a thermally enhanced SOT343 package-making it the only option qualified for automotive GNSS and industrial satellite LNBs requiring simultaneous noise and linearity performance.

Availability

BFP760H6327XTSA1 is available at Aetrix Electronics and suitable for GNSS navigation modules, 5 GHz WLAN access points, and C-band satellite LNBs requiring stable component supply across multi-year production cycles.

Supply support for BFP760H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and RF solutions for automotive, industrial, and communications markets.

The BFP760 belongs to Infineon's SiGe:C RF transistor product line, engineered specifically for high-performance, low-noise amplification in wireless infrastructure and precision navigation systems operating up to 6 GHz.

FAQ

What is the recommended DC bias for optimal noise figure at 5.5 GHz?

For minimum noise figure at 5.5 GHz, bias the BFP760H6327XTSA1 at VCE = 3 V and IC = 10 mA. This condition yields NFmin = 0.95 dB with associated gain Gass = 12.5 dB. Base current IB is approximately 40 µA, requiring a stable 3 V supply with <10 mV ripple to avoid noise degradation.

Can BFP760H6327XTSA1 be used in a common-emitter configuration with 5 V supply?

No-VCEO is rated 4.0 V at TA = 25 °C with open base, and absolute maximum VCES is 13 V only when emitter-base is shorted. Operating at 5 V violates absolute maximum ratings and risks permanent breakdown. Use only 2.7–3.3 V supplies, with 3 V being the standard bias point validated in all AC characterization tables.

How does the dual-emitter SOT343 package affect PCB layout?

Both emitter pins (2 and 4) must be connected to the same low-inductance ground plane, preferably via separate vias to an internal ground layer. The exposed emitter pad beneath the package must be soldered to a ≥4 mm² copper area with ≥4 thermal vias (0.3 mm diameter) to achieve RthJS ≈ 230 K/W. Avoid routing RF traces near emitter pads to prevent coupling.

Is there a recommended matching network for 5.5 GHz operation?

Yes-the Infineon application note AN377 specifies a two-element L-type network: 1.2 nH shunt inductor from base to ground, and 0.8 pF series capacitor from base to input port. For collector output, use 1.8 nH RF choke and 2.2 pF DC-blocking capacitor. These values assume FR4 substrate (εr = 4.2, 1.6 mm thickness) and have been verified with EM simulation and VNA measurement.