Infineon Technologies BFP840ESDH6327XTSA1

Overview

BFP840ESDH6327XTSA1 from Infineon is a SiGe:C NPN RF heterojunction bipolar transistor (HBT) with integrated ESD protection, designed for 5 GHz band front-end amplification in WLAN and satellite navigation receivers. It delivers NFmin = 0.85 dB at 5.5 GHz, fT = 80 GHz, Gms = 22.5 dB, OIP3 = 22 dBm, and supports VCC = 1.2 V/1.8 V low-voltage operation.

For engineers reviewing the BFP840ESDH6327XTSA1 datasheet, BFP840ESDH6327XTSA1 pinout, BFP840ESDH6327XTSA1 application, or BFP840ESDH6327XTSA1 equivalent, key selection criteria include minimum noise figure at 5.5 GHz, HBM ESD hardness (1.5 kV), SOT343 package compatibility, and DC bias stability under 5 mA/10 mA operating conditions.

Technical Context

This discrete RF transistor employs SiGe:C heterojunction technology to achieve high fT (80 GHz) and low base resistance, enabling ultra-low noise performance at microwave frequencies. Its ESD-hardened structure integrates robust protection across all pins per JESD22-A114 (HBM).

The device operates as a common-emitter amplifier with fixed bias configuration: emitter terminals (Pins 2 and 4) serve as RF ground reference and DC return path, while collector (Pin 3) and base (Pin 1) define signal input/output interface in 50 Ω systems. Thermal design relies on RthJS = 551 K/W to manage 75 mW Ptot at TS ≤ 108 °C.

Key Specifications

Pinout & Package

Package: SOT343 - 4-pin plastic surface-mount package with exposed emitter paddle for thermal dissipation and RF grounding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF transistor applications.

Compared with BFP740FESDH6327XTSA1 and NE85633, the BFP840ESDH6327XTSA1 provides superior noise performance and built-in ESD hardening in a thermally optimized SOT343 package-making it optimal for space-constrained, high-reliability 5 GHz receiver designs where first-pass yield and thermal stability are critical.

Availability

BFP840ESDH6327XTSA1 is available at Aetrix Electronics and suitable for WLAN infrastructure, satellite navigation modules, and WiMAX base stations requiring stable component supply and qualified industrial-grade reliability.

Supply support for BFP840ESDH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global manufacturing and quality certification to ISO/TS 16949 and JEDEC standards.

The BFP840ESD belongs to Infineon's high-frequency SiGe:C transistor product line, engineered specifically for low-noise, high-linearity RF front-end applications in wireless communication and precision navigation systems.

FAQ

What is the maximum allowable collector-emitter voltage for continuous operation?

The absolute maximum VCEO is 2.25 V at TA = 25 °C with open base. Operation above this voltage risks permanent breakdown; for 2.85–3.6 V supplies, a series collector resistor must be used to limit VCE to ≤2.25 V under all bias conditions, including transient load changes.

How does the dual-emitter configuration affect RF matching?

Pins 2 and 4 are internally connected emitters tied to the same die region and exposed paddle. This reduces bond-wire inductance asymmetry and improves S-parameter repeatability across units. RF matching networks should treat both pins as a single low-inductance ground node, not separate paths.

Can the BFP840ESDH6327XTSA1 operate reliably at 1.2 V supply?

Yes-datasheet confirms full RF performance (NFmin = 0.9 dB, Gms = 21.5 dB, OIP3 = 21 dBm) at VCE = 1.2 V, IC = 5 mA. However, DC current gain (hFE) drops to ~180, so base bias networks must be recalculated to maintain stable quiescent point.

Is the 1.5 kV HBM ESD rating applicable to all pins during powered operation?

The 1.5 kV HBM rating applies to all pins under unpowered conditions per JESD22-A114. During powered operation, the integrated protection remains active but clamping behavior depends on instantaneous VCE and IB; sustained overvoltage beyond VCEO still causes failure regardless of ESD rating.