Infineon Technologies BFP843FH6327XTSA1

Overview

BFP843FH6327XTSA1 from Infineon is a SiGe:C NPN RF heterojunction bipolar transistor (HBT) optimized for low-noise, broadband amplification in 5.5 GHz front-ends. It delivers NFmin = 1.1 dB at 5.5 GHz/1.8 V/8 mA, Gma = 18 dB at 5.5 GHz/1.8 V/15 mA, and OIP3 = 19.5 dBm under identical conditions-enabling high-sensitivity receiver stages in satellite navigation and WLAN infrastructure.

For engineers reviewing the BFP843FH6327XTSA1 datasheet, BFP843FH6327XTSA1 pinout, BFP843FH6327XTSA1 application, or BFP843FH6327XTSA1 equivalent, key selection criteria include its 20 dBm RF input power tolerance, 1.5 kV HBM ESD hardness, TSFP-4-1 package with dual-emitter configuration, and validated industrial qualification per JEDEC47/20/22.

Technical Context

This HBT leverages SiGe:C technology to achieve f_T > 60 GHz, enabling sub-1.2 dB noise figure up to 5.5 GHz while maintaining robustness against RF overdrive and ESD. Its pre-matched broadband design eliminates external matching networks for common 50 Ω systems across 450 MHz–5.5 GHz.

The dual-emitter (Pin 2 and Pin 4) configuration supports balanced amplifier topologies or current-sharing bias schemes. DC operation is specified from V_CE = 1.2 V to 3.6 V, with collector current rated up to 55 mA and junction temperature limited to 150 °C.

Key Specifications

Pinout & Package

Package: TSFP-4-1 - ultra-small surface-mount plastic package (1.1 mm × 0.9 mm × 0.37 mm), lead-free, RoHS-compliant, optimized for RF layout with low parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF transistor applications.

Compared with BFP843FH6327XTSA1, BFP740FESD offers superior noise at sub-3 GHz but lacks 5.5 GHz capability and dual-emitter flexibility, while NE85633 trades ESD hardness and RF ruggedness for lower unit cost in non-critical environments.

Availability

BFP843FH6327XTSA1 is available at Aetrix Electronics and suitable for GPS/GLONASS receivers, 5 GHz Wi-Fi LNA modules, and SDARS/DAB tuners requiring stable component supply, long-term lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for BFP843FH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in SiGe:C transistor technology for high-frequency applications.

The BFP843F belongs to Infineon's RF Transistor product line, engineered specifically for low-noise, high-linearity amplification in wireless communication front-ends from sub-GHz to 6 GHz.

FAQ

What is the recommended bias network for BFP843FH6327XTSA1 in a 5.5 GHz LNA?

A typical bias network uses a 10 kΩ base resistor from V_BB to Pin 1 (B), a 10 Ω emitter degeneration resistor between Pin 2 (E) and ground, and a 100 nH RF choke from Pin 3 (C) to V_CC. The dual-emitter (Pin 4) is tied to Pin 2 for single-ended operation. DC blocking capacitors ≥100 pF are required on input/output lines.

Can BFP843FH6327XTSA1 operate at 1.2 V supply voltage?

Yes-datasheet confirms stable DC characteristics and AC performance down to V_CE = 1.2 V. At 1.2 V/8 mA, NFmin degrades to 1.4 dB and Gma drops to ~15 dB at 5.5 GHz, but remains functional for ultra-low-power GNSS tracking modes where sensitivity trade-offs are acceptable.

Is thermal derating required when operating near P_tot = 125 mW?

Yes-R_thJS = 395 K/W means a 50 mW dissipation raises junction temperature by ~20 °C above solder-point temperature. For continuous operation at 150 °C T_J, keep solder-point temperature ≤100 °C and limit average power to ≤125 mW only with adequate PCB copper area (≥25 mm² thermal pad) and airflow.

Does the TSFP-4-1 package support reflow soldering per J-STD-020?

Yes-the TSFP-4-1 package is qualified for standard lead-free reflow profiles (peak 260 °C, 20–40 sec above 217 °C). Infineon specifies maximum soldering point temperature (T_S) ≤ 260 °C and recommends using nitrogen atmosphere to minimize voiding in the thermal pad under the emitter leads.