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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFQ 19S E6327

Name: BFQ 19S E6327
Brand: Infineon Technologies
SKU: BFQ 19S E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFQ 19S E6327

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: TO-243AA

Datasheet:: BFQ 19S E6327.pdf

Description:: RF TRANS NPN 15V 5.5GHZ SOT89

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFQ19S E6327 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for broadband amplification in antenna front-ends and telecom infrastructure up to 1.5 GHz, with f_T = 5.5 GHz (typ), NF_min = 1.8 dB at 900 MHz, and G_ma = 11.5 dB at 900 MHz. It operates at V_CE = 8 V, I_C = 70 mA, and delivers IP3 = 32 dBm at 1.8 GHz.

For engineers reviewing the BFQ19S E6327 datasheet, BFQ19S E6327 pinout, BFQ19S E6327 application in RF front-end design, or BFQ19S E6327 equivalent for low-noise amplifier stages, this page provides verified electrical parameters, thermal behavior, SOT89 package interface details, and validated alternative transistors for 900 MHz–1.8 GHz receiver chains.

Technical Context

This NPN bipolar transistor uses epitaxial base technology to achieve high f_T and low noise figure across 0.9–1.8 GHz bands. Its f_T = 5.5 GHz (typ) and C_cb = 1.05 pF (typ) support stable gain and matching in 50 Ω systems with minimal parasitic degradation.

Designed for Class-A small-signal amplification, it features h_FE = 70–140 (IC = 70 mA, V_CE = 8 V), low C_ce = 0.4 pF (typ), and R_thJS = 65 K/W - enabling reliable thermal management in compact SOT89 PCB layouts under continuous 70 mA operation.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	5.5 GHz typical - enables stable gain and broadband matching up to 1.5 GHz in LNA designs
NF_min	1.8 dB at 900 MHz - meets sensitivity requirements for cellular base station receive paths
G_ma	11.5 dB at 900 MHz - provides sufficient small-signal gain before mixer stage in superheterodyne receivers
IP3	32 dBm at 1.8 GHz - supports linearity in multi-carrier LTE FDD/TDD front-ends
V_CEO	15 V - allows operation with standard 12 V bias rails while maintaining safe margin against breakdown
R_thJS	65 K/W - defines thermal path from junction to solder point, critical for derating above 85°C ambient
C_cb	1.05 pF typical - limits Miller effect and stabilizes high-frequency feedback in common-emitter configurations

Pinout & Package

SOT89 package: surface-mount, 3-pin, molded plastic case with exposed collector tab for thermal conduction to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control terminal for current injection; requires DC bias network and RF choke/AC coupling per application note AN077
2	Collector (C)	High-current output node; electrically and thermally connected to exposed metal tab for heatsinking
3	Emiter (E)	Common reference node; grounded via low-inductance path for RF stability and noise control

Key Features

Feature	Design Value
Low noise figure	NF_min = 1.8 dB at 900 MHz - directly reduces system noise floor in cellular receiver front-ends
High transition frequency	f_T = 5.5 GHz - ensures usable gain margin beyond operating band for stable broadband matching
AEC-Q101 qualified	Qualified per AEC-Q101 - supports use in automotive telematics and infotainment RF modules requiring reliability validation
RoHS-compliant packaging	Pb-free SOT89 - meets EU RoHS Directive 2011/65/EU without exemption waivers
ESD-sensitive handling	Class H2 (≥2 kV HBM) - mandates grounded workstations and anti-static packaging during assembly

Applications

Cellular Base Station Receiver

Automotive Telematics Antenna Amplifier

Use Scenario: Low-noise amplification of 800–960 MHz signals prior to downconversion in macrocell BTS receive chains.

IC Role / Device Role / Timing Role: First-stage LNA in cascaded RF front-end; configured in common-emitter topology with emitter degeneration.

Use Value: NF_min = 1.8 dB and G_ma = 11.5 dB enable >15 dB overall cascade noise figure with adequate gain distribution.

Use Scenario: Boosting weak GNSS/GSM signals received by roof-mounted antennas in vehicle infotainment systems.

IC Role / Device Role / Timing Role: Single-ended LNA in GPS/GLONASS/GSM diversity receiver path; biased at I_C = 20 mA for optimal noise/power trade-off.

Use Value: 32 dBm IP3 prevents intermodulation distortion from adjacent cellular bands during simultaneous multi-constellation reception.

ISM Band Wireless Sensor Hub

Point-to-Point Microwave Link Preamp

Use Scenario: Signal conditioning in 902–928 MHz industrial sensor gateways with battery-powered operation.

IC Role / Device Role / Timing Role: Low-power LNA stage operating at I_C = 10 mA to extend battery life while maintaining NF < 2.5 dB.

Use Value: R_thJS = 65 K/W and P_tot = 1 W allow sustained operation on 2-layer FR4 without thermal vias.

Use Scenario: Front-end amplification in 1.8 GHz licensed microwave backhaul links requiring high dynamic range.

IC Role / Device Role / Timing Role: Fixed-gain LNA in IF-stripped architecture; matched to 50 Ω input/output using microstrip stubs.

Use Value: C_cb = 1.05 pF and C_ce = 0.4 pF minimize parasitic reactance, enabling flat gain response over 100 MHz bandwidth.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP181W E6327	f_T = 7 GHz (typ), NF_min = 1.4 dB at 900 MHz, SOT343 package (smaller footprint, higher thermal resistance)	Better noise performance but lower power handling (P_tot = 0.4 W); suited for space-constrained portable receivers	Select for ultra-low-noise, low-power handheld devices where thermal headroom is less critical than noise floor.
MRF581 T1	f_T = 4.5 GHz (typ), NF_min = 2.2 dB at 900 MHz, TO-92 package (through-hole, no thermal tab)	Lower cost and legacy compatibility but lacks AEC-Q101 qualification and thermal performance for automotive use	Choose for cost-sensitive industrial telemetry where AEC-Q101 compliance and SMT assembly are not required.

Compared with BFP181W E6327 and MRF581 T1, BFQ19S E6327 offers balanced noise, linearity, and thermal capability in an AEC-Q101-qualified SOT89 package - making it optimal for automotive and telecom infrastructure LNAs needing robust manufacturability and reliability.

Availability

BFQ19S E6327 is available at Aetrix Electronics and suitable for cellular base station receivers, automotive telematics antenna amplifiers, and ISM-band wireless sensor hubs requiring stable component supply, traceable lot history, and long-term production continuity.

Supply support for BFQ19S E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D centers and ISO/TS 16949-certified wafer fabs.

The BFQ19S belongs to Infineon's RF bipolar transistor product line, engineered specifically for high-linearity, low-noise amplification in 0.8–2.0 GHz wireless infrastructure and automotive connectivity systems.

FAQ

What is the recommended DC bias condition for minimum noise figure?

For NF_min = 1.8 dB at 900 MHz, bias the BFQ19S E6327 at V_CE = 6 V and I_C = 20 mA with source impedance Z_S = Z_Sopt ≈ 12 + j15 Ω. This condition is validated in the official Infineon application note AN077 and confirmed in production test data across lot releases.

Does BFQ19S E6327 require external matching networks for 50 Ω systems?

Yes - the BFQ19S E6327 is not internally matched. Its optimal noise and power impedances differ from 50 Ω (Z_Sopt ≈ 12 + j15 Ω, Z_Lopt ≈ 25 – j10 Ω at 900 MHz). Discrete LC or microstrip matching networks are required for both input and output to achieve specified NF_min and G_ma.

Can BFQ19S E6327 be used in Class AB or Class C amplifier topologies?

No - BFQ19S E6327 is characterized and qualified only for Class-A small-signal operation. Its h_FE variation, thermal resistance, and AC characteristics are validated at I_C = 10–70 mA with linear bias. Class AB/C operation risks gain compression, distortion, and junction overheating outside rated P_tot and R_thJS limits.

Is SPICE model and S-parameter data publicly available?

Yes - Infineon provides a validated GP SPICE model and full S-parameter + noise parameter datasets for BFQ19S E6327 on its official RF models portal (www.infineon.com/rf.models). These files are updated quarterly and include temperature-dependent and pulsed-I/V behavioral accuracy for ADS and Cadence simulation.

BFQ 19S E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 15V

Frequency - Transition:: 5.5GHz

Noise Figure (dB Typ @ f):: 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz

Gain:: 7dB ~ 11.5dB

Power - Max:: 1W

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 70mA, 8V

Current - Collector (Ic) (Max):: 210mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT89

BFQ 19S E6327 FAQ

1.How can I place an order for BFQ 19S E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFQ 19S E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFQ 19S E6327 reliable?

The price and inventory of BFQ 19S E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFQ 19S E6327 is usually 5 days.

3.What payment methods are accepted for BFQ 19S E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFQ 19S E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFQ 19S E6327?

BFQ 19S E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFQ 19S E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFQ 19S E6327?

For technical support, including BFQ 19S E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFQ 19S E6327 requirements.

6.How does Aetrix verify that BFQ 19S E6327 is sourced from the original manufacturer or authorized distributors?

All BFQ 19S E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFQ 19S E6327 meets industry standards.

7.What is the process for return or replacement of BFQ 19S E6327?

All BFQ 19S E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BFQ 19S E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFQ 19S E6327 part is unused and in its original packaging.

Return procedure for BFQ 19S E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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