Infineon Technologies BFR106E6327HTSA1

Overview

BFR106E6327HTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for UHF/VHF amplification, delivering 22 dBm OP1dB and 31 dBm OIP3 at 900 MHz under 8 V/70 mA bias, with f_T = 5 GHz (typ), C_cb = 0.85 pF (typ), and NF_min = 1.8 dB at 900 MHz - used in linear broadband amplifiers and antenna front-end driver stages.

For engineers reviewing the BFR106E6327HTSA1 datasheet, BFR106E6327HTSA1 pinout, BFR106E6327HTSA1 application, or BFR106E6327HTSA1 equivalent, key selection criteria include noise figure at 900 MHz/1.8 GHz, third-order intercept linearity, SOT23 thermal resistance (R_thJS = 105 K/W), DC current gain (h_FE = 70–140), and collector-emitter breakdown voltage (V_(BR)CEO = 15 V).

Technical Context

This NPN RF transistor employs a planar epitaxial silicon bipolar process with emitter ballasting for improved linearity and thermal stability. Its high f_T (5 GHz typ) and low C_cb (0.85 pF typ) support stable gain up to 1.8 GHz, while the 31 dBm OIP3 enables multitone signal handling in base station receiver front-ends.

The device operates with fixed-bias or emitter-degenerated configurations, supports 5–8 V collector supply, and features a grounded-emitter layout in SOT23 package with defined thermal path to PCB soldering point (R_thJS = 105 K/W). ESD sensitivity (HBM Class 1B) mandates strict handling protocols.

Key Specifications

Pinout & Package

SOT23 plastic surface-mount package with gull-wing leads; thermal resistance R_thJS = 105 K/W measured from junction to soldering point on collector lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFR92A and MRF581, the BFR106E6327HTSA1 delivers superior linearity (31 dBm OIP3) and lower noise (1.8 dB) at 900 MHz within the same SOT23 footprint, making it preferred for cellular infrastructure and high-fidelity antenna amplifiers demanding both SNR and IMD performance.

Availability

BFR106E6327HTSA1 is available at Aetrix Electronics and suitable for cellular base station receivers, FM/TV antenna amplifiers, ISM band transceivers, and two-way radio driver stages requiring stable component supply across industrial and telecom production cycles.

Supply support for BFR106E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and R&D centers.

The BFR106 belongs to Infineon's legacy RF bipolar transistor product line, designed specifically for high-linearity, low-noise amplification in UHF/VHF communication systems including broadcast, cellular infrastructure, and industrial wireless links.

FAQ

What is the recommended bias condition for optimal noise figure?

The BFR106E6327HTSA1 achieves its minimum noise figure (NF_min = 1.8 dB) at 900 MHz with I_C = 20 mA and V_CE = 8 V under matched source impedance (Z_S = Z_Sopt). This condition requires precise DC biasing using emitter degeneration and base voltage divider networks to stabilize operating point against temperature drift.

Can this transistor be used in 5 V supply applications?

Yes - the BFR106E6327HTSA1 supports 5 V collector supply operation, as confirmed by its specified V_CEO = 15 V and documented use in 5 V driver amplifiers. At 5 V/70 mA, P1dB drops to ~20 dBm and OIP3 to ~29 dBm, but linearity remains sufficient for many VHF applications.

Is thermal derating required above 76 °C case temperature?

Yes - total power dissipation must be linearly derated above T_S = 76 °C per the published P_tot vs. T_S curve. At 105 °C case temperature, maximum allowable dissipation falls to 450 mW to maintain junction temperature ≤150 °C, requiring adequate PCB copper area and airflow in enclosed designs.

Does this part have automotive qualification documentation?

Yes - an AEC-Q101 qualification report is available for the BFR106 series, confirming compliance with stress tests for temperature cycling, humidity, mechanical shock, and ESD (HBM Class 1B). This supports use in automotive infotainment RF modules and telematics antenna interfaces.