Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BFR 181 E6780

Part No.:
BFR 181 E6780
Manufacturer:
Infineon Technologies
Category:
Bipolar RF Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBFR 181 E6780.pdf
Description:
RF TRANS NPN 12V 8GHZ SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,160

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BFR181 E6780 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for broadband amplifier stages in 900 MHz and 1.8 GHz cellular front-ends, featuring fT = 8 GHz, NFmin = 0.9 dB at 900 MHz, VCEO = 12 V, IC = 20 mA max, and SOT23 package.

For engineers reviewing the BFR181 E6780 datasheet, BFR181 E6780 pinout, BFR181 E6780 application in RF LNA design, or BFR181 E6780 equivalent for GSM/EDGE receiver amplifiers, this page delivers verified electrical specs, thermal derating curves, noise matching conditions, and AEC-Q101 qualification status.

Technical Context

This NPN RF transistor operates in common-emitter configuration with DC current gain (hFE) of 70–140 at IC = 5 mA/VCE = 8 V, and supports stable broadband amplification up to 1.8 GHz via maximum available power gain (Gma) of 12.5 dB under matched impedance conditions.

Its low Ccb (0.27 pF typ) and Ceb (0.35 pF typ) enable high-frequency stability, while ZSopt-based noise matching ensures minimum noise figure across 900 MHz–1.8 GHz bands-critical for sensitivity-critical receiver paths.

Key Specifications

ParameterValue and Actual Design Meaning
fT8 GHz typical - enables stable gain extension beyond 1.8 GHz in narrowband and wideband RF amplifier designs
NFmin0.9 dB at 900 MHz - sets baseline noise floor for high-sensitivity cellular receiver LNAs
VCEO12 V - defines maximum collector-emitter voltage swing before breakdown in common-emitter biasing
IC max20 mA - determines maximum continuous collector current handling without thermal runaway at TA = 25 °C
Ccb0.27 pF typical - limits Miller effect and improves high-frequency stability in tuned amplifier stages
RthJS335 K/W - quantifies thermal resistance from junction to PCB solder point, critical for pulsed RF operation derating
hFE100 typical at IC = 5 mA - ensures predictable DC bias point stability in emitter-degenerated LNA topologies

Pinout & Package

Package: SOT23 - surface-mount plastic package with 3-pin lead frame, RoHS-compliant, qualified per AEC-Q101 for automotive-grade reliability.

Pin/TerminalCircuit RoleDesign Meaning
1 (B)BaseDC bias and RF input node; requires external DC blocking and impedance matching network
2 (E)EmitterAC ground reference and current return path; often connected to RF ground plane via low-inductance trace
3 (C)CollectorRF output and DC supply feed point; thermally coupled to PCB for junction temperature control

Key Features

FeatureDesign Value
Low-noise performanceNFmin = 0.9 dB at 900 MHz enables >2 dB improvement in receiver sensitivity vs. generic RF transistors
High transition frequencyfT = 8 GHz supports stable gain in 1.8 GHz LTE Band 3/8 front-end amplifiers
AEC-Q101 qualifiedValidated for automotive infotainment and telematics RF modules requiring extended temperature and ESD robustness
Thermal derating curvePtot drops linearly from 175 mW at TS = 25 °C to 0 mW at TS = 91 °C - enables precise thermal margining in compact PCB layouts

Applications

GSM/EDGE Receiver LNAAutomotive Telematics Front-End

Use Scenario: Low-noise amplification of 900 MHz receive signals in dual-band GSM handsets with tight PCB area constraints.

IC Role / Device Role / Timing Role: NPN RF transistor operating as common-emitter LNA with ZSopt input matching and 50 Ω output termination.

Use Value: 0.9 dB NFmin directly improves link budget by ~2 dB, extending cell coverage range without increasing base station density.

Use Scenario: RF signal conditioning in automotive GPS/GSM combo modules exposed to -40 °C to +105 °C ambient.

IC Role / Device Role / Timing Role: AEC-Q101-qualified RF transistor used in first-stage LNA of multi-constellation GNSS receiver chain.

Use Value: Stable hFE and Ccb over temperature ensure consistent noise figure and gain flatness across automotive operating range.

ISM Band 868 MHz TransceiverWireless Metering Node Amplifier

Use Scenario: High-linearity, low-noise amplification in European 868 MHz SRD transceivers for smart utility meters.

IC Role / Device Role / Timing Role: Single-transistor LNA with emitter degeneration for improved IP3 and noise trade-off at 868 MHz.

Use Value: Gms = 18.5 dB at 900 MHz provides sufficient gain to overcome mixer noise figure in direct-conversion receivers.

Use Scenario: Battery-powered AMR (Automatic Meter Reading) nodes requiring ultra-low quiescent current and minimal thermal rise.

IC Role / Device Role / Timing Role: RF transistor biased at IC = 2 mA to minimize DC power while maintaining NFmin ≤ 1.2 dB at 1.8 GHz.

Use Value: RthJS = 335 K/W allows full-rated operation on 2-layer FR4 without thermal vias, reducing BOM cost and assembly complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BFP181fT = 9 GHz, NFmin = 0.8 dB at 900 MHz, same SOT23 package and pinoutHigher gain and lower noise, but tighter bias sensitivity and reduced IC max (15 mA)Select when NF < 0.9 dB is required and bias stability can be tightly controlled
MRF581fT = 5 GHz, NFmin = 1.3 dB at 900 MHz, TO-92 package, higher Ptot (300 mW)Lower RF performance but superior thermal dissipation and legacy through-hole compatibilitySelect for cost-sensitive industrial radios where board space and thermal management are less constrained

Compared with BFR181 E6780, BFP181 offers marginal noise/gain advantage at higher bias precision cost, while MRF581 trades RF performance for thermal headroom and mechanical robustness-making BFR181 the balanced choice for space-constrained, production-volume GSM/ISM amplifiers.

Availability

BFR181 E6780 is available at Aetrix Electronics and suitable for GSM/EDGE receiver LNAs, automotive telematics front-ends, and ISM band 868 MHz transceivers requiring stable component supply across industrial and automotive production cycles.

Supply support for BFR181 E6780 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC standards.

The BFR181 belongs to Infineon's RF bipolar transistor product line, engineered specifically for high-gain, low-noise amplification in sub-2 GHz wireless infrastructure and mobile terminal applications.

FAQ

What is the recommended DC bias condition for minimum noise figure at 900 MHz?

For NFmin = 0.9 dB at 900 MHz, the datasheet specifies IC = 2 mA and VCE = 8 V with source impedance ZS = ZSopt. This condition requires external matching network synthesis using measured S-parameters-not fixed resistor biasing alone.

Is BFR181 E6780 suitable for 5 V supply rail applications?

Yes-its VCEO = 12 V and VCES = 20 V allow safe operation with 5 V collector supply, provided peak RF voltage swing remains below 5 V and thermal limits (Ptot ≤ 175 mW at TS ≤ 91 °C) are maintained via proper PCB copper area.

Does the SOT23 package support reflow soldering per J-STD-020?

Yes-the SOT23 package is rated for standard lead-free reflow profiles (peak 260 °C, 10 s max), and Infineon's qualification report confirms compliance with JEDEC J-STD-020D. Thermal pad not required; standard stencil aperture yields reliable solder joints.

How does AEC-Q101 qualification impact use in non-automotive applications?

AEC-Q101 qualification certifies enhanced robustness against temperature cycling, humidity, ESD (HBM ≥ 2 kV), and mechanical shock-providing higher field reliability in industrial, medical, and outdoor wireless equipment, even when automotive use is not required.

BFR 181 E6780 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
12V
Frequency - Transition:
8GHz
Noise Figure (dB Typ @ f):
0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain:
18.5dB
Power - Max:
175mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 5mA, 8V
Current - Collector (Ic) (Max):
20mA
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23

BFR 181 E6780 FAQ

1.How can I place an order for BFR 181 E6780 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR 181 E6780 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR 181 E6780 reliable?

The price and inventory of BFR 181 E6780 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR 181 E6780 is usually 5 days.

3.What payment methods are accepted for BFR 181 E6780?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR 181 E6780 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR 181 E6780?

BFR 181 E6780 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR 181 E6780 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR 181 E6780?

For technical support, including BFR 181 E6780 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR 181 E6780 requirements.

6.How does Aetrix verify that BFR 181 E6780 is sourced from the original manufacturer or authorized distributors?

All BFR 181 E6780 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR 181 E6780 meets industry standards.

7.What is the process for return or replacement of BFR 181 E6780?

All BFR 181 E6780 units undergo pre-shipment inspection (PSI). If there is an issue with BFR 181 E6780, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR 181 E6780 part is unused and in its original packaging.

Return procedure for BFR 181 E6780:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BFR 181 E6780 Tags

  • BFR 181 E6780
  • BFR 181 E6780 PDF
  • BFR 181 E6780 Datasheet
  • BFR 181 E6780 Specifications
  • BFR 181 E6780 Images
  • Infineon Technologies
  • Infineon Technologies BFR 181 E6780
  • Buy BFR 181 E6780
  • BFR 181 E6780 Price
  • BFR 181 E6780 Distributor
  • BFR 181 E6780 Supplier
  • BFR 181 E6780 Wholesale
Related Products
BFR182WH6327XTSA1
BFR182WH6327XTSA1

Infineon Technologies

BFR92PE6327HTSA1
BFR92PE6327HTSA1

Infineon Technologies

BFR360FH6327XTSA1
BFR360FH6327XTSA1

Infineon Technologies

BFR193FH6327XTSA1
BFR193FH6327XTSA1

Infineon Technologies

BFU550AR
BFU550AR

NXP USA Inc.

BFR460L3E6327XTMA1
BFR460L3E6327XTMA1

Infineon Technologies

MMBTH81
MMBTH81

onsemi

BFU520WX
BFU520WX

NXP USA Inc.

BFP840FESDH6327XTSA1
BFP840FESDH6327XTSA1

Infineon Technologies

BFP650H6327XTSA1
BFP650H6327XTSA1

Infineon Technologies

BFU520AR
BFU520AR

NXP USA Inc.

BFS483H6327XTSA1
BFS483H6327XTSA1

Infineon Technologies

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER