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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFR 182 B6663

Name: BFR 182 B6663
Brand: Infineon Technologies
SKU: BFR 182 B6663
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR 182 B6663

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BFR 182 B6663.pdf

Description:: RF TRANS NPN 12V 8GHZ SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFR182 B6663 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for broadband amplifier stages in 900 MHz and 1.8 GHz cellular infrastructure and wireless modules, with f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz, and SOT23 package. It operates at I_C = 1–20 mA with V_CEO = 12 V and supports high gain (G_ma = 18 dB) under matched impedance conditions.

For engineers reviewing the BFR182 B6663 datasheet, BFR182 B6663 pinout, BFR182 B6663 application, or BFR182 B6663 equivalent, key selection criteria include noise figure at 900 MHz/1.8 GHz, transition frequency vs. bias current, thermal resistance (R_thJS = 230 K/W), SOT23 footprint compatibility, and AEC-Q101 qualification status for automotive-grade reliability validation.

Technical Context

The BFR182 B6663 is a single NPN bipolar junction transistor designed for small-signal RF amplification, featuring a grounded-emitter configuration with base-collector capacitance C_cb = 0.32 pF (typ.) and emitter-base capacitance C_eb = 0.8 pF (typ.) to support wideband matching. Its f_T of 8 GHz enables stable gain up to 1.8 GHz while maintaining NF_min ≤ 1.3 dB.

It delivers transducer gain |S_21e|² = 15 dB at 900 MHz and 9.5 dB at 1.8 GHz under 50 Ω source/load conditions, with DC current gain h_FE = 70–140 at I_C = 10 mA/V_CE = 8 V. Thermal design relies on R_thJS = 230 K/W and maximum junction temperature T_J = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	8 GHz typ. - defines usable small-signal bandwidth limit for amplifier design
NF_min	0.9 dB at 900 MHz - sets lowest achievable noise floor in LNA front-end stages
G_ma	18 dB at 900 MHz - maximum available power gain under conjugate match
V_CEO	12 V - maximum collector-emitter voltage before breakdown at I_B = 0
P_tot	250 mW at T_S ≤ 93 °C - limits continuous dissipation without derating
C_cb	0.32 pF typ. - impacts input impedance and stability in common-emitter layout
h_FE	100 typ. at I_C = 10 mA - determines base drive requirement and bias network sensitivity

Pinout & Package

Package: SOT23 - surface-mount plastic package with 3 terminals, footprint compatible with JEDEC TO-236AB standard, suitable for automated placement and reflow soldering.

Pin/Terminal	Circuit Role	Design Meaning
1 (B)	Base	Current-controlled input node; requires external bias network for stable Q-point
2 (E)	Emitter	Common reference terminal; typically grounded for RF amplifiers
3 (C)	Collector	Output node; connects to RF choke or matching network for signal extraction

Key Features

Feature	Design Value
Low noise figure	NF_min = 0.9 dB at 900 MHz enables high-sensitivity receiver front-ends
High transition frequency	f_T = 8 GHz supports stable gain up to 1.8 GHz in narrowband and LTE bands
AEC-Q101 qualified	Validated for automotive applications requiring robustness against thermal cycling and ESD
RoHS-compliant packaging	Pb-free SOT23 construction meets EU directive and facilitates lead-free assembly
ESD-sensitive handling	Class H2 (≥2 kV HBM) - requires grounded workstations and anti-static packaging during assembly

Applications

Cellular Base Station LNA

ISM Band Transceiver Front-End

Use Scenario: Low-noise amplification of 900 MHz receive signals in macrocell BTS RF modules.

IC Role / Device Role / Timing Role: NPN RF transistor operating in common-emitter configuration as first-stage LNA.

Use Value: NF_min = 0.9 dB preserves SNR in multi-carrier systems; G_ma = 18 dB reduces need for cascaded gain stages.

Use Scenario: Receive path amplification in 868/915 MHz ISM band IoT gateways and sensor hubs.

IC Role / Device Role / Timing Role: Small-signal RF amplifier with 50 Ω input/output matching for modular RF design.

Use Value: |S_21e|² = 15 dB at 900 MHz ensures sufficient link budget margin with minimal added noise.

Automotive Telematics Receiver

Portable GPS/GLONASS Front-End

Use Scenario: GNSS and LTE diversity receive chain in automotive infotainment head units.

IC Role / Device Role / Timing Role: AEC-Q101 qualified RF transistor used in dual-band LNA paths for antenna diversity switching.

Use Value: Qualification ensures operation across −40 °C to +125 °C ambient; R_thJS = 230 K/W supports thermal management on compact PCBs.

Use Scenario: Low-power GPS/GLONASS LNA stage in handheld navigation devices and wearables.

IC Role / Device Role / Timing Role: Single-transistor amplifier biased at I_C = 3 mA to minimize battery drain while meeting NF < 1.2 dB.

Use Value: NF_min = 1.3 dB at 1.8 GHz maintains position accuracy under weak-signal urban canyon conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP182	f_T = 9 GHz, NF_min = 0.8 dB at 900 MHz, same SOT23 package and pinout	Higher gain/noise performance; identical bias and layout requirements	Select when tighter noise margin or extended bandwidth beyond 1.8 GHz is required
MRF581	f_T = 5 GHz, NF_min = 1.1 dB at 900 MHz, SOT23 but different pin assignment (1=C, 2=B, 3=E)	Lower f_T limits upper-frequency use; pinout mismatch requires PCB redesign	Consider only for cost-sensitive non-automotive designs where 1.5 GHz max operation suffices

Compared with BFR182 B6663, BFP182 offers marginal noise/gain improvement with full drop-in compatibility, while MRF581 trades bandwidth and noise for lower cost but introduces layout risk due to reversed pinout and reduced f_T.

Availability

BFR182 B6663 is available at Aetrix Electronics and suitable for cellular infrastructure, automotive telematics, ISM-band IoT gateways, and portable GNSS receivers requiring stable component supply across production lifecycles.

Supply support for BFR182 B6663 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC standards.

The BFR182 belongs to Infineon's legacy RF bipolar transistor product line, engineered specifically for high-linearity, low-noise amplification in sub-2 GHz wireless infrastructure and automotive communication systems.

FAQ

What is the recommended bias point for minimum noise figure?

The BFR182 B6663 achieves NF_min = 0.9 dB at I_C = 3 mA and V_CE = 8 V with optimal source impedance Z_Sopt. This bias condition requires a stable current source or emitter-degenerated resistor network to maintain Q-point under temperature variation and process spread.

Is the BFR182 B6663 pin-compatible with other SOT23 RF transistors?

Yes - BFR182 B6663 uses standard SOT23 pinout (1=B, 2=E, 3=C), matching Infineon's BFP182 and ON Semiconductor's MMBT2222A. However, it is not pin-compatible with MRF581 (1=C, 2=B, 3=E) or PN2222A variants with alternate assignments.

Does the AEC-Q101 qualification cover all parametric limits?

The AEC-Q101 qualification report confirms reliability testing (HTOL, TC, UHAST, ESD) under automotive temperature and stress conditions, but does not alter electrical specifications - all parameters remain as specified in the 2009 datasheet at T_A = 25 °C unless otherwise noted.

How does thermal resistance affect maximum RF output power?

With R_thJS = 230 K/W and T_J = 150 °C limit, maximum allowable P_tot drops to ~150 mW at T_S = 105 °C. For RF output power, this constrains peak envelope power in pulsed operation and mandates careful copper pour and via placement beneath the collector pad.

BFR 182 B6663 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 12V

Frequency - Transition:: 8GHz

Noise Figure (dB Typ @ f):: 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Gain:: 12dB ~ 18dB

Power - Max:: 250mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 10mA, 8V

Current - Collector (Ic) (Max):: 35mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BFR 182 B6663 FAQ

1.How can I place an order for BFR 182 B6663 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR 182 B6663 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR 182 B6663 reliable?

The price and inventory of BFR 182 B6663 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR 182 B6663 is usually 5 days.

3.What payment methods are accepted for BFR 182 B6663?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR 182 B6663 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR 182 B6663?

BFR 182 B6663 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR 182 B6663 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR 182 B6663?

For technical support, including BFR 182 B6663 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR 182 B6663 requirements.

6.How does Aetrix verify that BFR 182 B6663 is sourced from the original manufacturer or authorized distributors?

All BFR 182 B6663 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR 182 B6663 meets industry standards.

7.What is the process for return or replacement of BFR 182 B6663?

All BFR 182 B6663 units undergo pre-shipment inspection (PSI). If there is an issue with BFR 182 B6663, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR 182 B6663 part is unused and in its original packaging.

Return procedure for BFR 182 B6663:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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