Infineon Technologies BFR182E6327HTSA1

Overview

BFR182E6327HTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for broadband amplifier stages in 900 MHz and 1.8 GHz cellular infrastructure and wireless modules, featuring f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz, and h_FE = 70–140 at I_C = 10 mA, V_CE = 8 V.

For engineers reviewing the BFR182E6327HTSA1 datasheet, BFR182E6327HTSA1 pinout, BFR182E6327HTSA1 application, or BFR182E6327HTSA1 equivalent, key selection criteria include noise figure at 3 mA bias, transducer gain (|S21e|² = 15 dB @ 900 MHz), C_cb = 0.32 pF typ., V_CEO = 12 V, and SOT23 package thermal resistance R_thJS = 230 K/W.

Technical Context

This NPN RF transistor operates in common-emitter configuration with emitter-grounded or base-grounded biasing, supporting broadband small-signal amplification up to 1.8 GHz. Its high f_T and low C_cb/C_eb enable stable gain and minimal phase distortion in narrowband and wideband front-end designs.

The device is characterized under pulsed conditions to avoid self-heating, with validated AC parameters including G_ma = 18 dB @ 900 MHz and |S21e|² = 15 dB @ 900 MHz into 50 Ω, confirming suitability for low-power RF gain blocks requiring Z_Sopt/Z_Lopt impedance matching.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount plastic package with gull-wing leads, RoHS-compliant, qualified per AEC-Q101.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFR92A and MRF581, the BFR182E6327HTSA1 delivers optimal balance of noise, bandwidth, and thermal performance in space-constrained SOT23 RF designs-especially where 900 MHz sensitivity and 1.8 GHz headroom are both required.

Availability

BFR182E6327HTSA1 is available at Aetrix Electronics and suitable for GSM/EDGE base station receivers, automotive telematics RF front-ends, and portable GPS LNA modules requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for BFR182E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q standards.

The BFR182 belongs to Infineon's discrete RF transistor product line, engineered specifically for low-noise, high-gain amplification in cellular, ISM, and GNSS front-end applications up to 2 GHz.

FAQ

What is the recommended bias condition for minimum noise figure?

The BFR182E6327HTSA1 achieves NF_min = 0.9 dB at I_C = 3 mA, V_CE = 8 V with source impedance Z_S = Z_Sopt. This condition requires external matching networks to present Z_Sopt ≈ 25 + j15 Ω at the base terminal, as specified in Infineon's application note AN201.

Can this transistor be used in Class A power amplifier configurations?

No - the BFR182E6327HTSA1 is characterized and optimized for small-signal, low-noise amplification only. Its P_tot = 250 mW and I_C max = 35 mA limit usable output power to <10 mW; it lacks safe operating area (SOA) data or thermal derating curves for linear power operation.

Is the SOT23 package lead-free and compatible with standard reflow profiles?

Yes - the BFR182E6327HTSA1 uses a Pb-free SOT23 package qualified for JEDEC J-STD-020D reflow, with peak temperature tolerance up to 260 °C for 10 seconds. The device carries RoHS-compliant marking and full material declaration per Infineon's compliance documentation.

Does Infineon provide S-parameter data for this part?

Yes - S-parameter datasets (S11, S21, S12, S22) are published in the official BFR182 datasheet (Rev. 2.0, 2009) for multiple bias points (I_C = 3–15 mA, V_CE = 5–10 V) and frequencies from 100 MHz to 2 GHz, enabling accurate simulation in ADS and Cadence AWR.