Infineon Technologies BFR 182T E6327

Overview

BFR182T E6327 from Infineon Technologies is an NPN silicon RF transistor optimized for low-noise, high-gain broadband amplification at 900 MHz and 1.8 GHz, with f_T = 8 GHz, noise figure F = 1.2 dB (at 900 MHz), and maximum stable power gain G_ms = 20 dB - deployed in cellular front-end LNA stages and UHF receiver IF amplifiers.

For engineers reviewing the BFR182T E6327 datasheet, BFR182T E6327 pinout, BFR182T E6327 application, or BFR182T E6327 equivalent, key selection criteria include verified 1.2 dB noise figure at 900 MHz, SC75 package thermal resistance R_thJS = 300 K/W, f_T ≥ 6 GHz minimum, C_cb = 0.33 pF typical, and h_FE = 50–200 at I_C = 10 mA.

Technical Context

This device employs a high-frequency optimized epitaxial NPN structure with sub-micron emitter geometry to achieve 8 GHz transition frequency and low base resistance. Its Gummel-Poon SPICE model (IS = 4.85 fA, BF = 84, C_jc = 490 fF) supports accurate wideband AC simulation up to 6 GHz.

Designed for fixed-bias and common-emitter configurations, it delivers stable transducer gain |S₂₁|² = 16 dB at 900 MHz with 50 Ω source/load, and maintains usable gain >10 dB up to 1.8 GHz under V_CE = 8 V, I_C = 10 mA conditions.

Key Specifications

Pinout & Package

Supplied in SC75 (SOT-323) plastic surface-mount package: 1.2 mm × 2.1 mm × 0.9 mm body, gull-wing leads, 0.65 mm pitch. Thermal pad not present; soldering point referenced to collector lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFR182T E6327, BFP182 E6327 offers identical RF performance in alternate packaging, while MRF581 trades 0.6 dB higher noise and 3 GHz lower f_T for greater voltage headroom and power handling - making BFR182T optimal for compact, low-noise 900/1800 MHz receiver stages.

Availability

BFR182T E6327 is available at Aetrix Electronics and suitable for GSM/DCS receiver design, UHF RFID reader development, and ISM band transceiver prototyping requiring stable component supply and full traceability.

Supply support for BFR182T E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and high-performance discrete devices, with global manufacturing and R&D centers.

The BFR182T belongs to Infineon's RF bipolar transistor product line, engineered specifically for low-noise, high-frequency amplification in mobile communications infrastructure and portable terminals.

FAQ

What is the recommended bias condition for lowest noise figure?

For minimum noise figure of 1.2 dB, bias the device at I_C = 3 mA and V_CE = 8 V with source impedance matched to Z_Sopt = 50 Ω (real) and no reactive component. This condition is validated per datasheet Figure 7 and requires external matching networks on both input and output.

Is the BFR182T E6327 RoHS compliant and halogen-free?

Yes - BFR182T E6327 complies with EU RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The SC75 package uses lead-free matte tin plating and green molding compound, with full material declarations available upon request.

Can this transistor be used in common-base configuration?

Yes - the BFR182T supports common-base operation with verified S-parameter data up to 1.8 GHz. At I_C = 10 mA, V_CE = 8 V, |S₁₁| < –10 dB and |S₂₂| < –12 dB confirm good input/output isolation, enabling stable wideband amplifier designs with improved high-frequency gain flatness.

What is the maximum allowable pulsed collector current?

The absolute maximum pulsed collector current is 35 mA, limited by peak junction temperature. For pulse widths ≤100 µs and duty cycle ≤0.01, the device supports I_C(peak) = 35 mA with P_tot(peak)/P_tot(DC) ≤ 10×, as defined in Figure 5 of the datasheet - requiring strict thermal management during transient operation.