Infineon Technologies BFR 182W E6327

Overview

BFR182W E6327 from Infineon Technologies is a low-noise silicon bipolar RF transistor designed for broadband amplifier stages in 900 MHz and 1.8 GHz cellular front-ends, featuring f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz, h_FE = 70–140, V_CEO = 12 V, and SOT323 package with visible leads.

For engineers reviewing the BFR182W E6327 datasheet, BFR182W E6327 pinout, BFR182W E6327 application in RF LNA design, or BFR182W E6327 equivalent for GSM/EDGE receiver amplifiers, this page delivers verified electrical specs, thermal derating curves, noise matching conditions, and AEC-Q101 qualification status.

Technical Context

This NPN RF transistor operates in common-emitter configuration with DC bias stability across 1–20 mA collector current range and supports broadband small-signal amplification up to 1.8 GHz. Its low C_cb (0.34 pF typ) and C_eb (0.8 pF typ) enable high f_T and stable gain at UHF frequencies.

The device is characterized under Z_S = Z_Sopt for minimum noise figure and Z_L = Z_Lopt for maximum stable gain (G_ms = 19 dB at 900 MHz), with transducer gain |S₂₁|² = 15.5 dB into 50 Ω at 900 MHz - confirming suitability for impedance-matched RF receiver chains.

Key Specifications

Pinout & Package

SOT323 plastic surface-mount package with visible leads, 1.3 mm × 2.1 mm footprint, 0.95 mm height, and gull-wing lead form for reflow compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFP182W E6327, this part offers identical RF performance but different reel logistics; versus MRF581W, BFR182W E6327 provides 3 GHz higher f_T and 0.3 dB lower noise - critical for 1.8 GHz EDGE and LTE Band 3 receiver sensitivity.

Availability

BFR182W E6327 is available at Aetrix Electronics and suitable for GSM/EDGE receiver LNAs, automotive telematics RF modules, and ISM-band 915 MHz sensor nodes requiring stable component supply across multi-year production cycles.

Supply support for BFR182W E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global R&D centers and ISO/TS 16949-certified wafer fabs.

The BFR182W belongs to Infineon's BFR series of silicon bipolar RF transistors engineered specifically for cost-sensitive, high-volume wireless infrastructure and handset front-end applications demanding low noise and broadband gain.

FAQ

What is the recommended DC bias condition for minimum noise figure?

The datasheet specifies NF_min = 0.9 dB at I_C = 3 mA, V_CE = 8 V, and Z_S = Z_Sopt. This condition requires external matching network synthesis using measured S-parameters; typical Z_Sopt is ~25 − j15 Ω at 900 MHz. Bias stability must be ensured via emitter degeneration or base voltage divider with bypass capacitor.

Is BFR182W E6327 suitable for 5 V supply rail applications?

Yes - its V_CEO = 12 V and V_CES = 20 V ratings provide sufficient margin for 5 V operation with RF swing. At I_C = 10 mA and V_CE = 5 V, power dissipation remains within 50 mW (20% of P_tot), well below thermal limits. Derating curves confirm safe operation up to 125 °C ambient when mounted on 2-layer FR4 with 1 cm² copper pour.

How does the AEC-Q101 qualification impact design reuse in automotive applications?

AEC-Q101 qualification confirms successful completion of stress tests including HTSL (1000 h at 150 °C), TC (1000 cycles −40 to +125 °C), and HAST (96 h at 130 °C/85% RH). This eliminates need for additional component-level qualification in automotive infotainment or telematics modules, reducing time-to-market and validation cost for Tier 1 suppliers.

Can BFR182W E6327 replace BFR92A in existing designs?

No - BFR92A has higher V_CEO (20 V), lower f_T (5 GHz), and different SOT143 package (4-pin). Pinout mismatch (BFR92A: 1=C, 2=E, 3=B, 4=E) and thermal resistance (R_thJS = 300 K/W) make direct replacement unsafe. Redesign of bias network, matching, and PCB layout would be required to migrate to BFR182W E6327.