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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFR183E6327HTSA1

Name: BFR183E6327HTSA1
Brand: Infineon Technologies
SKU: BFR183E6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR183E6327HTSA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BFR183E6327HTSA1.pdf

Description:: RF TRANS NPN 12V 8GHZ SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFR183E6327HTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for broadband amplifier stages in 900 MHz and 1.8 GHz cellular infrastructure and wireless modules. It delivers f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz, and G_ms = 17.5 dB under matched conditions, operating at I_C = 15 mA, V_CE = 8 V.

For engineers reviewing the BFR183E6327HTSA1 datasheet, BFR183E6327HTSA1 pinout, BFR183E6327HTSA1 application, or BFR183E6327HTSA1 equivalent, key selection criteria include noise figure vs. frequency trade-offs, SOT23 thermal resistance (R_thJS = 200 K/W), collector-emitter breakdown (V_CEO = 12 V), and ESD-sensitive handling requirements.

Technical Context

This NPN RF transistor employs epitaxial base technology to achieve high f_T and low minimum noise figure across UHF bands. Its performance is specified under pulsed DC conditions to minimize self-heating, with verified AC characteristics including C_cb = 0.37 pF (typ) and C_eb = 1.1 pF (typ) at 1 MHz.

The device operates in common-emitter configuration with fixed biasing constraints: V_CE ≤ 12 V, I_C ≤ 65 mA, and junction temperature limited to 150 °C. Thermal derating follows P_tot = ƒ(T_S) curve, where power dissipation drops to 0 mW at T_S = 120 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	8 GHz typical - enables stable gain up to 1.8 GHz in narrowband LNA designs
NF_min	0.9 dB at 900 MHz - sets lower bound for system noise floor in GSM/EDGE front-ends
G_ms	17.5 dB at 900 MHz - defines maximum stable power gain under conjugate matching
V_CEO	12 V - limits usable supply headroom in single-supply 5–9 V RF amplifier rails
R_thJS	200 K/W - requires thermal pad or copper pour on PCB to sustain >100 mW continuous operation
C_cb	0.37 pF typical - contributes to input impedance roll-off above 1 GHz; impacts matching network Q
h_FE	70–140 - supports bias stability across process variation in fixed-current mirror configurations

Pinout & Package

Package: SOT23 - surface-mount plastic package with gull-wing leads, RoHS-compliant, rated for reflow soldering per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (B)	Base	DC bias and RF input node; requires external DC blocking and impedance matching network
2 (E)	Emitter	AC ground reference and current return path; must be low-inductance connection to ground plane
3 (C)	Collector	RF output and DC power feed point; thermally coupled to PCB via collector lead at soldering point

Key Features

Feature	Design Value
Low-noise RF amplification	NF_min = 0.9 dB at 900 MHz enables receiver sensitivity down to –105 dBm in 200 kHz bandwidth
High transition frequency	f_T = 8 GHz supports design margin for 1.8 GHz LTE Band 3/8 front-end LNAs
AEC-Q101 qualified	Qualified per automotive stress test standard - suitable for telematics and V2X module designs
ESD-sensitive handling	HBM Class 2 (≥2 kV) - mandates grounded wrist strap and ionized air during PCB assembly
Thermal derating profile	P_tot linearly decreases from 450 mW at T_S = 25 °C to 0 mW at T_S = 120 °C

Applications

GSM Base Station Receiver LNA

ISM Band 868 MHz Transceiver Front-End

Use Scenario: Low-noise amplification of weak 900 MHz signals prior to downconversion in macrocell BTS receivers.

IC Role / Device Role / Timing Role: NPN bipolar RF transistor configured as common-emitter LNA with source impedance matching to 50 Ω.

Use Value: NF_min = 0.9 dB directly improves system noise figure by ≤0.3 dB over alternatives with 1.2 dB NF, extending cell edge coverage.

Use Scenario: First-stage amplification in battery-powered 868 MHz wireless sensor nodes compliant with EN 300 220.

IC Role / Device Role / Timing Role: Single-transistor broadband LNA operating at I_C = 5 mA to minimize quiescent current while maintaining NF < 1.4 dB.

Use Value: R_thJS = 200 K/W allows operation at 125 °C junction temperature with minimal heatsinking, enabling compact PCB layout.

Automotive Telematics RF Front-End

UWB Pulse Amplifier Stage

Use Scenario: Receive-path amplification in AEC-Q101-qualified vehicle-to-infrastructure (V2I) modules operating at 920 MHz.

IC Role / Device Role / Timing Role: Matched-gain RF transistor in cascaded LNA chain, leveraging G_ms = 17.5 dB to reduce required stages.

Use Value: AEC-Q101 qualification eliminates need for additional automotive-grade screening, reducing time-to-market for Tier-1 suppliers.

Use Scenario: Short-pulse amplification in 3.1–4.8 GHz UWB systems using sub-nanosecond pulse shaping.

IC Role / Device Role / Timing Role: High-f_T NPN transistor biased in Class-A for linear transient response with minimal overshoot.

Use Value: f_T = 8 GHz ensures <3% group delay variation across 1.5 GHz instantaneous bandwidth, preserving pulse fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP183	f_T = 7 GHz (typ), NF_min = 1.1 dB at 900 MHz, same SOT23 package	Lower gain and higher noise limit use in ultra-low-power ISM receivers	Select when thermal budget permits slightly higher NF for cost-sensitive volume production
MRF581	f_T = 9 GHz (typ), NF_min = 1.0 dB, TO-92 package, higher P_tot = 600 mW	Larger footprint and manual assembly requirement restricts use in automated SMT lines	Prefer for prototyping or high-reliability military comms where thermal margin >100 °C is critical

Compared with BFP183 and MRF581, BFR183E6327HTSA1 offers optimal balance of noise, gain, and SMT compatibility for high-volume 900 MHz infrastructure amplifiers-delivering 0.2 dB NF advantage over BFP183 while maintaining full SOT23 reflow compatibility unlike TO-92-based MRF581.

Availability

BFR183E6327HTSA1 is available at Aetrix Electronics and suitable for GSM base station receivers, automotive telematics modules, ISM-band wireless sensors, and UWB pulse amplifiers requiring stable component supply across multi-year production cycles.

Supply support for BFR183E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, headquartered in Munich.

The BFR183 belongs to Infineon's legacy RF bipolar transistor product line, designed specifically for high-frequency, low-noise amplification in wireless infrastructure and automotive communication systems.

FAQ

Is BFR183E6327HTSA1 suitable for 2.4 GHz WiFi applications?

No. While its f_T = 8 GHz suggests theoretical usability, NF_min degrades to ≥2.1 dB and G_ms falls below 8 dB at 2.4 GHz per Infineon's AC characterization data. It is validated only up to 1.8 GHz with guaranteed NF ≤ 1.4 dB and G_ms ≥ 11.5 dB.

What is the recommended PCB layout for thermal management?

Use a minimum 10 mm² copper pour connected to Pin 3 (collector) via ≥3 thermal vias (0.3 mm diameter, filled). Maintain ≥0.5 mm clearance from adjacent signal traces. The thermal resistance R_thJS = 200 K/W assumes this layout; omitting vias increases junction temperature by ≥25 °C at 100 mW.

Does BFR183E6327HTSA1 require external bias stabilization?

Yes. Its h_FE variation (70–140) and positive temperature coefficient demand emitter degeneration or voltage-divider bias with bypass capacitor. Fixed-base bias alone causes thermal runaway above I_C = 10 mA without emitter resistor ≥22 Ω.

Can it replace BFR92A in existing designs?

No. BFR92A has V_CEO = 20 V and C_cb = 0.25 pF (typ), enabling higher supply voltage and wider bandwidth. BFR183E6327HTSA1's V_CEO = 12 V and C_cb = 0.37 pF would reduce headroom and increase input capacitance, requiring full impedance re-matching and stability analysis.

BFR183E6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 12V

Frequency - Transition:: 8GHz

Noise Figure (dB Typ @ f):: 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Gain:: 17.5dB

Power - Max:: 450mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 15mA, 8V

Current - Collector (Ic) (Max):: 65mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BFR183E6327HTSA1 FAQ

1.How can I place an order for BFR183E6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR183E6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR183E6327HTSA1 reliable?

The price and inventory of BFR183E6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR183E6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BFR183E6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR183E6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR183E6327HTSA1?

BFR183E6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR183E6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR183E6327HTSA1?

For technical support, including BFR183E6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR183E6327HTSA1 requirements.

6.How does Aetrix verify that BFR183E6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BFR183E6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR183E6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BFR183E6327HTSA1?

All BFR183E6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFR183E6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR183E6327HTSA1 part is unused and in its original packaging.

Return procedure for BFR183E6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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