Infineon Technologies BFR 183T E6327

Overview

BFR183T E6327 from Infineon Technologies is an NPN silicon RF transistor optimized for low-noise, high-gain broadband amplification in 900 MHz and 1.8 GHz cellular front-ends. It delivers 1.2 dB noise figure at 900 MHz, 8 GHz transition frequency (f_T), and 19.5 dB maximum stable power gain at 900 MHz with 15 mA collector current - enabling use in GSM/EDGE receiver LNA stages.

For engineers reviewing the BFR183T E6327 datasheet, BFR183T E6327 pinout, BFR183T E6327 application, or BFR183T E6327 equivalent, key selection criteria include its SC75 package thermal resistance (R_thJS = 270 K/W), verified 0.4 pF typical C_cb, and guaranteed f_T ≥ 6 GHz across production lots - critical for impedance-matched 50 Ω RF designs requiring repeatable small-signal performance.

Technical Context

This RF transistor employs a planar epitaxial silicon structure with gold-metallized emitter and base contacts to minimize parasitic inductance and capacitance. Its Gummel-Poon SPICE model (validated up to 6 GHz) includes extracted parameters such as C_je = 23.077 fF and C_jc = 460.11 fF, supporting accurate AC simulation of matching networks and stability analysis.

The device operates in common-emitter configuration with DC biasing defined by V_CE = 8 V and I_C = 15 mA for optimal noise and gain trade-off. Its 0.382 nH emitter inductance (L₃) and 0.706 nH base inductance (L₂) are explicitly modeled in the package equivalent circuit, enabling precise de-embedding in S-parameter-based design flows.

Key Specifications

Pinout & Package

Supplied in SC75 (SOT-323) plastic surface-mount package with 3-pin configuration: Pin 1 = Base (B), Pin 2 = Emitter (E), Pin 3 = Collector (C). The package features low thermal resistance (270 K/W) and controlled leadframe inductance for RF layout integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with NE68133 and MRF581, the BFR183T E6327 offers superior noise performance and thermal efficiency in SC75, making it optimal for space-constrained, sensitivity-critical LNAs - whereas NE68133 trades NF for broader vendor availability, and MRF581 prioritizes power handling over bandwidth.

Availability

BFR183T E6327 is available at Aetrix Electronics and suitable for GSM receiver LNAs, ISM-band sensor nodes, UWB pulse amplifiers, and EDGE transmitter drivers requiring stable component supply across automotive telematics, industrial IoT gateways, and medical telemetry devices.

Supply support for BFR183T E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949.

The BFR183T belongs to Infineon's discrete RF transistor product line, engineered specifically for high-frequency, low-noise amplification in portable wireless infrastructure and consumer radio systems.

FAQ

What is the recommended DC bias condition for minimum noise figure?

The BFR183T E6327 achieves its specified 1.2 dB noise figure at 900 MHz when biased at I_C = 5 mA and V_CE = 8 V with source impedance matched to Z_Sopt ≈ 25 + j15 Ω. This condition is validated per Infineon's preliminary data sheet and requires external matching network implementation - not internal circuitry - to realize optimal noise performance.

Is the SC75 package lead-free and RoHS-compliant?

Yes, the BFR183T E6327 is manufactured in a lead-free, RoHS-compliant SC75 package per Infineon's material declaration (document ID: PCN-2021-0012). The termination finish is matte tin (Sn), qualified for reflow soldering up to 260°C peak temperature with standard JEDEC J-STD-020 moisture sensitivity level 1 rating.

Can this transistor be used in Class-C switching applications?

No - the BFR183T E6327 is characterized and optimized for linear Class-A and Class-AB RF amplification only. Its SPICE model and electrical specifications do not cover switching behavior, and its 12 V V_CEO rating and lack of specified switching times make it unsuitable for digital or pulsed RF switching applications.

How does the ESD sensitivity affect PCB handling and test procedures?

Rated HBM Class 1A (≤250 V), the BFR183T E6327 requires strict ESD controls: grounded wrist straps, dissipative mats, ionized air, and conductive foam storage. During functional testing, all probes must be grounded before contact, and bias supplies must be ramped slowly to avoid transient overstress on the base-emitter junction.