Infineon Technologies BFR183WH6327XTSA1

Overview

BFR183WH6327XTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor in SOT323 package, designed for broadband RF amplification at 900 MHz and 1.8 GHz. It delivers f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz, and h_FE = 70–140 (IC = 15 mA, V_CE = 8 V), targeting front-end LNA stages in cellular infrastructure and wireless receivers.

For engineers reviewing the BFR183WH6327XTSA1 datasheet, BFR183WH6327XTSA1 pinout, BFR183WH6327XTSA1 application, or BFR183WH6327XTSA1 equivalent, key selection criteria include noise figure at 5–15 mA bias, transition frequency verification at 500 MHz/8 V, C_cb ≤ 0.7 pF, thermal resistance R_thJS = 210 K/W, and AEC-Q101 qualification status.

Technical Context

This NPN RF transistor operates with V_CEO = 12 V and I_C up to 65 mA, optimized for small-signal amplification where low input capacitance (C_eb = 1 pF typ.) and high gain-bandwidth product are critical. Its Z_Sopt-matched configuration enables minimum noise figure under 5 mA collector current.

The device uses epitaxial base technology with visible-leads SOT323 packaging, supporting surface-mount assembly while maintaining thermal performance via defined soldering-point junction-to-case path (R_thJS = 210 K/W). ESD sensitivity (HBM Class 2) mandates handling per JEDEC JESD625-A.

Key Specifications

Pinout & Package

Package: SOT323 - three-terminal plastic surface-mount package with visible leads, footprint compatible with JEDEC MO-203AA, rated for P_tot = 450 mW at T_S ≤ 56 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFR92A and MRF581, BFR183WH6327XTSA1 offers superior noise figure at 900 MHz and optimal SMT-compatible thermal performance, making it preferred for volume-manufactured wireless infrastructure and automotive telematics LNAs.

Availability

BFR183WH6327XTSA1 is available at Aetrix Electronics and suitable for cellular base station receivers, automotive telematics modules, and portable GPS front-ends requiring stable component supply, RoHS/halogen-free compliance, and AEC-Q101 qualification.

Supply support for BFR183WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global R&D and manufacturing infrastructure.

The BFR183W series belongs to Infineon's discrete RF transistor portfolio, engineered specifically for low-noise, high-gain broadband amplification in 0.8–2.5 GHz wireless infrastructure and automotive communication systems.

FAQ

What is the maximum DC collector current rating for BFR183WH6327XTSA1?

The absolute maximum DC collector current is 65 mA at T_A = 25 °C. Derating applies above 25 °C ambient per the P_tot vs. T_S curve; continuous operation above 30 mA requires careful thermal design due to R_thJS = 210 K/W and junction temperature limit of 150 °C.

Does BFR183WH6327XTSA1 require external matching for minimum noise figure?

Yes. NF_min = 0.9 dB is achieved only with source impedance Z_S = Z_Sopt, which is not 50 Ω. The datasheet provides Z_Sopt values (e.g., 11.5 − j7.2 Ω at 900 MHz); discrete L/C or microstrip matching networks are required to transform 50 Ω system impedance to Z_Sopt.

Is BFR183WH6327XTSA1 suitable for 5G sub-6 GHz applications?

No. While f_T = 8 GHz suggests theoretical usability, verified AC characteristics (G_ma, NF_min) are specified only up to 1.8 GHz. At 3.5 GHz, gain and noise performance degrade significantly; dedicated 5G RF transistors with validated 3.5 GHz data should be used instead.

How does the SOT323 package affect thermal performance compared to SOT23?

SOT323 has lower thermal resistance than SOT23 due to shorter leadframe paths and optimized die attach. R_thJS = 210 K/W (measured to solder point) is 15–20% better than typical SOT23 equivalents, enabling ~10% higher continuous RF power handling at the same board copper area.