Infineon Technologies BFR193E6327HTSA1

Overview

BFR193E6327HTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor designed for high-gain, broadband amplification up to 2 GHz. It delivers f_T = 8 GHz, NF_min = 1 dB at 900 MHz, and P-1dB = 13 dBm under 50 Ω conditions, targeting front-end LNA stages in GSM/UMTS infrastructure and portable radio receivers.

For engineers reviewing the BFR193E6327HTSA1 datasheet, BFR193E6327HTSA1 pinout, BFR193E6327HTSA1 application, or BFR193E6327HTSA1 equivalent, key selection criteria include verified noise figure at 900 MHz, transducer gain of 13 dB at 900 MHz, SOT23 package thermal resistance (R_thJS = 140 K/W), and AEC-Q101 qualification status for automotive-grade reliability.

Technical Context

This NPN RF transistor operates with V_CEO = 12 V and I_C = 80 mA maximum, optimized for linear small-signal amplification in the 0.1–2 GHz band. Its h_FE range (70–140 at I_C = 30 mA, V_CE = 8 V) supports stable biasing in cascode or common-emitter configurations.

AC performance is characterized at 900 MHz and 1.8 GHz with Z_S = Z_L = 50 Ω: |S21|² = 13 dB (900 MHz), G_ma = 15 dB (900 MHz), IP3 = 30 dBm, and C_cb = 0.66 pF (typ.), enabling predictable matching network design for narrowband and broadband RF stages.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount plastic package with 3-pin configuration, RoHS-compliant, qualified per AEC-Q101.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFR193E6327HTSA1, BFP180W offers superior noise and bandwidth but demands re-layout for SOT343; MRF581 provides mechanical compatibility with older designs but sacrifices 0.3 dB noise figure and thermal efficiency in SMT production.

Availability

BFR193E6327HTSA1 is available at Aetrix Electronics and suitable for GSM infrastructure, UMTS handset front-ends, and automotive telematics modules requiring stable component supply and AEC-Q101 traceability.

Supply support for BFR193E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949.

The BFR193 belongs to Infineon's discrete RF transistor product line, engineered specifically for high-linearity, low-noise amplification in cellular, ISM, and automotive wireless systems up to 2 GHz.

FAQ

What is the maximum DC collector current rating for BFR193E6327HTSA1?

The absolute maximum DC collector current is 80 mA at T_A = 25 °C. Derating is required above 25 °C per the P_tot vs. T_S curve; at T_S = 69 °C, total power dissipation drops to 580 mW, limiting practical I_C under sustained operation.

Is BFR193E6327HTSA1 suitable for 5G sub-6 GHz applications?

No - its f_T = 8 GHz and verified AC characteristics are specified only up to 2 GHz. While usable in some 3.5 GHz front-end stages with reduced gain and higher noise, it lacks characterization data or guaranteed performance above 2 GHz per the official Infineon datasheet.

Does BFR193E6327HTSA1 require external bias stabilization?

Yes - its h_FE variation (70–140) and thermal drift necessitate emitter degeneration or collector-feedback biasing. The datasheet recommends fixed-base bias with emitter resistor for stable I_C control across temperature and process variation.

Can BFR193E6327HTSA1 be used in Class AB power amplifier stages?

No - it is rated for small-signal operation only. Its P-1dB = 13 dBm and maximum I_C = 80 mA indicate linear amplification capability, not power output. Use dedicated RF power transistors (e.g., BFP640) for Class AB PA stages requiring >20 dBm output.