Infineon Technologies BFR193FH6327

Overview

BFR193FH6327 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for high-gain, broadband amplification up to 2 GHz. It delivers f_T = 8 GHz, NF_min = 1 dB at 900 MHz, and P-1dB = 14.5 dBm at 900 MHz, with TSFP-3 package and pinout B-E-C. It is used in cellular front-end LNA stages for GSM/UMTS handsets.

For engineers reviewing the BFR193FH6327 datasheet, BFR193FH6327 pinout, BFR193FH6327 application, or BFR193FH6327 equivalent, key selection criteria include minimum noise figure at 900 MHz, transducer gain at 50 Ω systems, thermal resistance (R_thJS = 135 K/W), and AEC-Q101 qualification status for automotive RF modules.

Technical Context

This NPN RF transistor operates in common-emitter configuration with DC current gain (h_FE) of 70–140 at I_C = 30 mA, V_CE = 8 V. Its small-signal S-parameter behavior supports stable amplification up to 1.8 GHz, with G_ma = 19 dB and G_ms = 12.5 dB at optimal terminations.

Designed for linear operation, it features C_cb = 0.63 pF (typ), C_eb = 2.25 pF (typ), and C_ce = 0.25 pF (typ) at specified bias conditions-enabling predictable matching network design in 50 Ω RF paths.

Key Specifications

Pinout & Package

Package: TSFP-3 (Thin Small Flat Package, 3-pin, leadless, surface-mount). Dimensions conform to Infineon standard TSFP outline; thermal pad exposed on underside for PCB heat sinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFR92A and MRF581, the BFR193FH6327 provides superior noise performance (1 dB vs. ≥1.2 dB), higher f_T, and automotive-grade reliability in a compact surface-mount package-making it the preferred choice for production-grade cellular and telematics LNAs.

Availability

BFR193FH6327 is available at Aetrix Electronics and suitable for GSM/UMTS handset design, automotive telematics modules, and ISM-band wireless sensor development requiring stable component supply and full traceability.

Supply support for BFR193FH6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and RF solutions, with global R&D and manufacturing infrastructure.

The BFR193FH6327 belongs to Infineon's RF bipolar transistor product line, engineered specifically for high-linearity, low-noise amplification in sub-2 GHz wireless infrastructure and mobile terminal applications.

FAQ

What is the recommended bias condition for minimum noise figure?

For NF_min = 1 dB at 900 MHz, use I_C = 10 mA and V_CE = 8 V with source impedance Z_S = Z_Sopt (provided in datasheet Figure 9). Base bias must be applied via high-impedance resistor or active current source to avoid degrading noise performance.

Is thermal pad connection mandatory in the PCB layout?

Yes-the TSFP-3 package requires soldering the exposed thermal pad to a dedicated copper pour connected to internal ground planes. Omitting this violates the R_thJS = 135 K/W specification and risks junction overheating above 100 mW dissipation.

Can BFR193FH6327 replace BFR92A in existing designs without layout changes?

No-though both are TSFP-3 devices, BFR193FH6327 has different Z_Sopt and higher f_T, requiring retuning of input matching networks. Also, its tighter thermal resistance demands more aggressive PCB copper area allocation.

Does Infineon provide S-parameter data for this transistor?

Yes-S-parameters (S11, S21, S12, S22) are published in the official BFR193F datasheet (Edition 2009-11-16), covering 0.1–3 GHz at I_C = 30 mA, V_CE = 8 V, and 50 Ω test fixtures; measured data is included in Table 3 and Figure 12.