Infineon Technologies BFR193WH6327XTSA1

Overview

BFR193WH6327XTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor in SOT323 package, designed for high-gain amplifier stages up to 2 GHz. It delivers f_T = 8 GHz, NF_min = 1 dB at 900 MHz, and G_ma = 16 dB at 900 MHz, supporting linear broadband amplification in cellular front-ends and GPS LNA modules.

For engineers reviewing the BFR193WH6327XTSA1 datasheet, BFR193WH6327XTSA1 pinout, BFR193WH6327XTSA1 application, or BFR193WH6327XTSA1 equivalent, key selection criteria include verified noise figure at 900 MHz, SOT323 thermal resistance (R_thJS = 150 K/W), third-order intercept point (IP3 = 30 dBm), and AEC-Q101 qualification status for automotive-grade reliability.

Technical Context

This NPN RF transistor operates with V_CEO = 12 V, I_C = 80 mA max, and exhibits h_FE = 70–140 at I_C = 30 mA/V_CE = 8 V. Its C_cb = 0.74 pF (typ) and C_eb = 1.8 pF (typ) support stable matching up to 1.8 GHz.

The device uses a grounded-emitter configuration with base-collector junction optimized for low capacitance and high f_T. Verified AC performance includes |S21|² = 13.5 dB at 900 MHz under 50 Ω source/load, and P_-1dB = 13 dBm - confirming suitability for small-signal gain blocks requiring linearity and noise control.

Key Specifications

Pinout & Package

SOT323 plastic surface-mount package with gull-wing leads; 3-terminal configuration optimized for RF impedance matching and thermal dissipation on FR4 PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFR193WH6327XTSA1, BFP181W trades slightly higher noise for greater gain and linearity headroom, while MRF581 offers thermal advantage at the expense of bandwidth - enabling trade-off-aware selection across cellular, GPS, and ISM designs.

Availability

BFR193WH6327XTSA1 is available at Aetrix Electronics and suitable for cellular front-end LNAs, GPS/GNSS receivers, and ISM-band transceiver driver stages requiring stable component supply and AEC-Q101-compliant reliability.

Supply support for BFR193WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global R&D and manufacturing infrastructure.

The BFR193W series belongs to Infineon's discrete RF transistor product line, engineered specifically for high-frequency, low-noise amplification in wireless infrastructure and mobile terminal applications.

FAQ

What is the maximum operating frequency for stable small-signal gain?

The BFR193WH6327XTSA1 maintains usable gain up to 2 GHz, validated by measured |S21|² = 8 dB at 1.8 GHz under 50 Ω conditions. Its 8 GHz f_T provides design margin for layout parasitics and process variation, but practical amplifier bandwidth is limited by matching network and stability constraints-not intrinsic f_T.

Is this device qualified for automotive use?

Yes - the BFR193WH6327XTSA1 carries full AEC-Q101 qualification per Rev D test plan, including temperature cycling, mechanical shock, and ESD testing. This certification covers operation from −40 °C to +125 °C ambient, making it suitable for engine control unit (ECU) RF interfaces and infotainment antenna modules.

How does the SOT323 package affect thermal performance?

The SOT323 package achieves R_thJS = 150 K/W from junction to soldering point, meaning a 100 mW dissipation raises junction temperature by 15 °C above board temperature. Derating begins at T_S = 63 °C, requiring thermal vias and copper pour under the collector pad to maintain T_J ≤ 150 °C in continuous operation.

Can this transistor be used in common-base configuration?

Yes - the BFR193WH6327XTSA1 supports common-base operation with verified C_cb = 0.74 pF and V_CBO = 20 V, enabling ultra-wideband amplifiers and cascode stages. However, its h_FE specification and noise data are published only for common-emitter mode; noise performance in common-base must be characterized per application layout.