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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFR 340T E6327

Name: BFR 340T E6327
Brand: Infineon Technologies
SKU: BFR 340T E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR 340T E6327

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SC-75, SOT-416

Datasheet:: BFR 340T E6327.pdf

Description:: RF TRANS NPN 9V 14GHZ SC75

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFR 340T E6327 from Infineon Technologies is an NPN silicon RF transistor optimized for low-voltage (V_CEO = 6 V), low-current (I_C = 10 mA) operation in high-frequency amplifiers and oscillators, featuring f_T = 14 GHz typical, C_cb = 0.24 pF typical, and F_min = 1.15 dB at 1.8 GHz - deployed in UHF front-end gain blocks and GSM/DCS low-noise amplifier stages.

For engineers reviewing the BFR 340T E6327 datasheet, BFR 340T E6327 pinout, BFR 340T E6327 application, or BFR 340T E6327 equivalent, key selection criteria include verified transition frequency, measured noise figure at 1.8 GHz, SC75 package thermal resistance (R_thJS = 605 K/W), insertion gain (G_ms = 15 dB), and ESD-sensitive handling requirements.

Technical Context

This RF transistor employs a planar epitaxial silicon structure with Gummel-Poon model parameters extracted up to 6 GHz, supporting accurate SPICE simulation (e.g., BF = 98.48, C_JE = 182 fF, TF = 10.3 ps). Its low base resistance (R_B = 59.99 Ω) and optimized junction capacitances (C_cb, C_eb, C_ce) enable stable gain and noise performance in narrowband 1–3 GHz designs.

The device operates under Class-A bias (I_C = 5 mA, V_CE = 3 V) for maximum stable gain (G_ms = 15 dB) and delivers P_-1dB = 0 dBm output compression at 1.8 GHz with 50-Ω terminations - validated via random sampling per preliminary data sheet Rev. Jul-01-2003.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	14 GHz typical - enables stable amplification up to S-band without external neutralization
F_min	1.15 dB at 1.8 GHz - supports low-noise receiver front-ends in cellular infrastructure
G_ms	15 dB at 1.8 GHz - provides usable small-signal gain in single-stage LNA designs
V_CEO	6 V - limits use to low-voltage RF stages; requires supply regulation below 5.5 V
C_cb	0.24 pF typical - reduces Miller effect, easing input matching above 1 GHz
R_thJS	605 K/W - constrains continuous power dissipation to ≤60 mW at board-level solder point
P_-1dB	0 dBm at 1.8 GHz - defines linear output headroom for low-power transceiver paths

Pinout & Package

Package: SC75 (SOT-323), surface-mount, 3-pin plastic package with standard lead finish and moisture sensitivity level (MSL) 1.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control electrode; low-impedance input requiring 50-Ω source termination for broadband stability
2	Emitter (E)	Common reference node; connected to RF ground plane to minimize parasitic inductance
3	Collector (C)	RF output node; exhibits 0.762 nH series inductance per package model - impacts output matching above 2 GHz

Key Features

Feature	Design Value
ESD-sensitive handling	Class H1B (≥2 kV HBM); requires grounded workstation, ionized air, and conductive packaging during assembly
Low-noise figure	F_min = 1.15 dB at 1.8 GHz - meets GSM receiver sensitivity targets without cascaded stages
High f_T/C_cb ratio	14 GHz / 0.24 pF = 58.3 GHz/pF - improves gain-bandwidth trade-off vs. competing RF transistors
Validated SPICE model	Full Gummel-Poon parameters provided (e.g., IS = 6.12 fA, BF = 98.48) - enables pre-layout AC/Noise simulation
Thermal design support	R_thJS = 605 K/W measured at collector lead - informs copper pour sizing on FR4 PCBs

Applications

GSM/DCS Band LNA

UHF Oscillator Core

Use Scenario: Front-end low-noise amplifier in dual-band (900/1800 MHz) mobile handset receivers.

IC Role / Device Role / Timing Role: NPN RF transistor configured as common-emitter amplifier with emitter degeneration.

Use Value: Achieves 1.15 dB noise figure and 15 dB gain at 1.8 GHz while drawing only 5 mA - extends battery life in portable devices.

Use Scenario: Colpitts oscillator generating stable 1.5–2.5 GHz local oscillator signals for upconversion.

IC Role / Device Role / Timing Role: Active resonant element providing phase shift and gain at fundamental frequency.

Use Value: Delivers >10 dB isolation between output and tank circuit due to low C_cb (0.24 pF), reducing frequency pulling.

ISM Band Sensor Transmitter

Low-Power RF Test Fixture

Use Scenario: 2.4 GHz ISM-band transmitter stage in wireless sensor nodes with <10 mW output.

IC Role / Device Role / Timing Role: Final-stage driver transistor biased for Class-A linear operation.

Use Value: Maintains P_-1dB = 0 dBm and IP3 = 13.5 dBm at 2.4 GHz - sufficient for BLE-compliant modulation fidelity.

Use Scenario: Calibration reference device in lab-grade RF gain/phase measurement setups.

IC Role / Device Role / Timing Role: Known-gain, known-noise active element used to verify VNAs and spectrum analyzers.

Use Value: Traceable G_ms = 15 dB and F_min = 1.15 dB allow ±0.3 dB gain calibration accuracy at 1.8 GHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP 640F E6327	f_T = 25 GHz, C_cb = 0.12 pF, V_CEO = 4.5 V	Higher frequency range but lower breakdown voltage - unsuitable for 5 V supply rails	Select when operating above 2 GHz with strict supply headroom constraints
MRF581 T1	f_T = 8 GHz, P_-1dB = +5 dBm, TO-92 package	Larger through-hole package, higher power capability - incompatible with dense SMT layouts	Select for prototyping or legacy through-hole designs requiring >0 dBm output

Compared with BFR 340T E6327, BFP 640F E6327 offers superior bandwidth but reduced voltage tolerance, while MRF581 T1 trades miniaturization for higher output power and manual assembly compatibility - choice depends on frequency target, supply architecture, and layout density requirements.

Availability

BFR 340T E6327 is available at Aetrix Electronics and suitable for GSM/DCS LNAs, UHF oscillators, ISM-band transmitters, and RF test fixtures requiring stable component supply across production lifecycles.

Supply support for BFR 340T E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and high-performance discrete devices, with global R&D centers and ISO/TS 16949-certified wafer fabs.

The BFR 340T E6327 belongs to Infineon's BFR-series of silicon RF transistors, designed specifically for cost-sensitive, high-volume 0.8–3 GHz wireless infrastructure and consumer radio applications where low noise, compact size, and SPICE-model readiness are critical.

FAQ

Is the BFR 340T E6327 pin-compatible with the BFR193?

No. The BFR 340T E6327 uses SC75 (SOT-323) with pinout B-E-C, while the BFR193 uses SOT-23 with pinout E-B-C. Layout redesign and netlist updates are required for substitution. Thermal resistance also differs significantly (R_thJS = 605 K/W vs. 420 K/W), affecting thermal pad design.

What is the recommended bias network for achieving F_min = 1.15 dB at 1.8 GHz?

A 50-Ω source impedance with DC blocking capacitor (100 pF) and emitter bypass (100 nF) is required. Matching must use microstrip stubs or lumped LC networks tuned to Z_Sopt ≈ 12 + j18 Ω - values derived from S-parameter measurements in the July 2003 preliminary datasheet.

Does the BFR 340T E6327 support 5 V supply operation?

No. Absolute maximum V_CEO is 6 V, but safe continuous operation requires V_CE ≤ 3 V to avoid degradation at I_C = 5 mA. At 5 V, collector-emitter leakage (I_CES) rises to near 10 µA, risking thermal runaway in unregulated supplies.

Can the BFR 340T E6327 be used in Class AB amplifier configurations?

Not recommended. The device is characterized and modeled for Class-A operation (I_C = 5 mA, V_CE = 3 V). Class AB introduces crossover distortion and unstable h_FE variation below 1 mA - no published S-parameters or linearity data exist for sub-2 mA bias conditions.

BFR 340T E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 9V

Frequency - Transition:: 14GHz

Noise Figure (dB Typ @ f):: 1.15dB @ 1.8GHz

Gain:: 15dB

Power - Max:: 60mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 5mA, 3V

Current - Collector (Ic) (Max):: 10mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SC75-3D

BFR 340T E6327 FAQ

1.How can I place an order for BFR 340T E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR 340T E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR 340T E6327 reliable?

The price and inventory of BFR 340T E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR 340T E6327 is usually 5 days.

3.What payment methods are accepted for BFR 340T E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR 340T E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR 340T E6327?

BFR 340T E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR 340T E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR 340T E6327?

For technical support, including BFR 340T E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR 340T E6327 requirements.

6.How does Aetrix verify that BFR 340T E6327 is sourced from the original manufacturer or authorized distributors?

All BFR 340T E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR 340T E6327 meets industry standards.

7.What is the process for return or replacement of BFR 340T E6327?

All BFR 340T E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BFR 340T E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR 340T E6327 part is unused and in its original packaging.

Return procedure for BFR 340T E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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