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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFR35APE6327HTSA1

Name: BFR35APE6327HTSA1
Brand: Infineon Technologies
SKU: BFR35APE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR35APE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BFR35APE6327HTSA1.pdf

Description:: RF TRANS NPN 15V 5GHZ SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFR35APE6327HTSA1 from Infineon Technologies is an NPN bipolar RF transistor optimized for low-distortion broadband amplifiers and oscillators up to 2 GHz, with f_T = 5 GHz (typ), NF_min = 1.4 dB at 900 MHz, and P_tot = 280 mW at T_S ≤ 88 °C. It operates at collector currents from 0.5 mA to 20 mA and is qualified per AEC-Q101 for automotive-grade reliability.

For engineers reviewing the BFR35APE6327HTSA1 datasheet, BFR35APE6327HTSA1 pinout, BFR35APE6327HTSA1 application, or BFR35APE6327HTSA1 equivalent, key selection criteria include noise figure at 900/1800 MHz, transducer gain under 50 Ω conditions, transition frequency, V_CEO = 15 V rating, and SOT23 thermal resistance (R_thJS = 220 K/W).

Technical Context

This device employs a silicon planar epitaxial NPN structure with optimized emitter-base and collector-base junction geometries to achieve high f_T and low C_cb (0.39 pF typ) and C_eb (0.64 pF typ). Its low base resistance and controlled doping profile support stable small-signal gain across 0.1–2 GHz.

The transistor is characterized for RF performance under pulsed DC conditions (IC = 15 mA, V_CE = 8 V), with verified G_ma = 16 dB at 900 MHz and |S₂₁|² = 13 dB under 50 Ω source/load matching - enabling direct integration into cellular front-end and ISM-band amplifier stages.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	5 GHz typical - enables stable amplification up to 2 GHz with margin for layout parasitics
NF_min	1.4 dB at 900 MHz - critical for receiver LNA sensitivity in GSM/EDGE systems
V_CEO	15 V - supports operation in 12 V bias rails with headroom for transient spikes
C_cb	0.39 pF typical - minimizes Miller effect and improves stability in common-emitter configurations
P_tot	280 mW at T_S ≤ 88 °C - defines maximum continuous dissipation before thermal derating begins
h_FE	70–140 - ensures consistent DC bias point across production lots for predictable gain setting
R_thJS	220 K/W - quantifies thermal path from junction to PCB solder point for board-level thermal design

Pinout & Package

Package: SOT23 - surface-mount plastic package with gull-wing leads, footprint compatible with JEDEC TO-236AB, rated for automated reflow assembly and automotive thermal cycling.

Pin/Terminal	Circuit Role	Design Meaning
1 (B)	Base	DC bias and RF input node; requires impedance-matched network for optimal noise performance
2 (E)	Emitter	AC ground reference in common-emitter configuration; connects to low-inductance ground plane
3 (C)	Collector	RF output and power delivery node; thermally coupled to PCB via collector lead for heat extraction

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood applications including temperature cycling, HTRB, and ESD testing
Low minimum noise figure	NF_min = 1.4 dB at 900 MHz enables >1 dB improvement in receiver sensitivity vs. higher-noise alternatives
High transition frequency	f_T = 5 GHz supports stable gain in UHF and low-band LTE front ends without neutralization
Pb-free RoHS compliance	Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles up to 260 °C peak
Controlled capacitance profile	C_cb = 0.39 pF and C_eb = 0.64 pF reduce tuning complexity in narrowband matching networks

Applications

GSM/EDGE Power Amplifier Driver

ISM-Band Low-Noise Amplifier

Use Scenario: Final-stage driver in dual-band GSM/EDGE handset PA modules operating at 900/1800 MHz.

IC Role / Device Role / Timing Role: NPN RF transistor configured as common-emitter Class A amplifier delivering 13 dB transducer gain.

Use Value: Enables 15 mA bias current with 1.4 dB NF_min, improving adjacent-channel rejection by ≥2 dB over legacy 2N5179-based designs.

Use Scenario: First-stage LNA in 2.4 GHz Wi-Fi access point receivers requiring low noise and moderate gain.

IC Role / Device Role / Timing Role: Small-signal NPN amplifier with Z_S = Z_Sopt matching for minimum noise figure.

Use Value: Delivers 16 dB maximum available gain at 900 MHz and maintains <2 dB NF up to 1.8 GHz, reducing cascaded noise figure.

Automotive Tire Pressure Monitoring System (TPMS)

UHF RFID Reader Front End

Use Scenario: RF oscillator and buffer amplifier in 434 MHz TPMS sensor transmitters.

IC Role / Device Role / Timing Role: NPN transistor in Colpitts oscillator topology with integrated tank circuit.

Use Value: f_T = 5 GHz provides >10× frequency margin over 434 MHz operation, ensuring stable oscillation across -40 to +125 °C.

Use Scenario: Intermediate-frequency amplifier in 860–960 MHz UHF RFID reader signal chain.

IC Role / Device Role / Timing Role: Common-emitter gain block between mixer and ADC, biased at 15 mA for linearity.

Use Value: 13 dB |S₂₁|² at 900 MHz under 50 Ω match simplifies filter interface design and reduces component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFR92A	f_T = 7 GHz (higher), NF_min = 1.8 dB (worse), V_CEO = 12 V (lower)	Less suitable for 12 V bias rails; higher f_T increases layout sensitivity	Prefer when bandwidth >2 GHz is required and noise <1.6 dB is not critical
MRF901	f_T = 4 GHz (lower), NF_min = 1.2 dB (better), P_tot = 250 mW (lower)	Lower power handling limits use in driver stages with >15 mA I_C	Prefer for ultra-low-noise LNA roles where gain margin is acceptable

Compared with BFR92A and MRF901, the BFR35APE6327HTSA1 offers the best balance of noise (1.4 dB), gain (13 dB), voltage rating (15 V), and thermal capability (280 mW) for cost-sensitive 900/1800 MHz amplifier designs requiring AEC-Q101 qualification.

Availability

BFR35APE6327HTSA1 is available at Aetrix Electronics and suitable for GSM/EDGE handset power amplifiers, automotive TPMS transmitters, and UHF RFID reader front ends requiring stable component supply, automotive-grade reliability, and consistent RF performance across temperature.

Supply support for BFR35APE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and RF solutions, with global R&D and manufacturing infrastructure.

The BFR35AP belongs to Infineon's bipolar RF transistor product line, designed specifically for high-linearity, low-noise amplification in cellular, ISM, and automotive wireless systems up to 2 GHz.

FAQ

What is the maximum recommended DC collector current for continuous operation?

The absolute maximum DC collector current is 45 mA, but for reliable long-term operation with thermal margin, Infineon specifies 20 mA as the upper limit for continuous use at ambient temperatures up to 85 °C. At 20 mA and V_CE = 8 V, power dissipation reaches 160 mW - well within the 280 mW P_tot limit at T_S ≤ 88 °C.

Is the BFR35APE6327HTSA1 suitable for use in 5G sub-6 GHz bands?

No - while its f_T = 5 GHz supports operation up to 2 GHz with margin, its AC characteristics (G_ma, NF_min, C_cb) are only specified and validated up to 1.8 GHz. Performance above 2.5 GHz is not characterized, and layout parasitics dominate beyond this point, making it unsuitable for n77/n78/n79 5G bands.

How does the SOT23 package affect thermal performance in high-gain amplifier layouts?

The SOT23 package has R_thJS = 220 K/W, meaning a 280 mW dissipation causes ~62 K junction-to-solder-point rise. In high-gain amplifier layouts, localized heating degrades h_FE and increases NF; therefore, copper pour under Pin 3 (collector) and short thermal vias to inner ground planes are mandatory to maintain T_J < 125 °C at full bias.

Does the AEC-Q101 qualification cover all parametric limits in the datasheet?

AEC-Q101 qualification covers stress tests (HTGB, H3TRB, TC, ESD) and parametric verification at temperature extremes, but only for the parameters explicitly listed in the qualification report - primarily V_CEO, I_CES, h_FE, and f_T. RF parameters like NF_min and G_ma are not part of AEC-Q101 scope and remain subject to standard production test limits at 25 °C.

BFR35APE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 15V

Frequency - Transition:: 5GHz

Noise Figure (dB Typ @ f):: 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

Gain:: 10.5dB ~ 16dB

Power - Max:: 280mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 15mA, 8V

Current - Collector (Ic) (Max):: 45mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BFR35APE6327HTSA1 FAQ

1.How can I place an order for BFR35APE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR35APE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR35APE6327HTSA1 reliable?

The price and inventory of BFR35APE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR35APE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BFR35APE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR35APE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR35APE6327HTSA1?

BFR35APE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR35APE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR35APE6327HTSA1?

For technical support, including BFR35APE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR35APE6327HTSA1 requirements.

6.How does Aetrix verify that BFR35APE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BFR35APE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR35APE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BFR35APE6327HTSA1?

All BFR35APE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFR35APE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR35APE6327HTSA1 part is unused and in its original packaging.

Return procedure for BFR35APE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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