Infineon Technologies BFR 360F E6765

Overview

BFR 360F E6765 from Infineon Technologies is an NPN silicon RF transistor optimized for low-noise amplifier stages in low-current RF front-ends, featuring 1.0 dB noise figure at 1.8 GHz, 14 GHz transition frequency (f_T), and 6 V_CEO rating - deployed in GPS L1-band receiver LNAs and 2.4 GHz ISM-band oscillator circuits.

For engineers reviewing the BFR 360F E6765 datasheet, BFR 360F E6765 pinout, BFR 360F E6765 application, or BFR 360F E6765 equivalent, key selection criteria include verified NF_min = 1.0 dB @ 1.8 GHz, f_T ≥ 11 GHz, C_cb = 0.32–0.5 pF, P-1dB = 9 dBm @ 1.8 GHz, and TSFP-3 package compatibility with high-frequency PCB layout constraints.

Technical Context

This RF transistor employs a planar epitaxial silicon structure with gold-metallized emitter and base contacts to minimize parasitic inductance and optimize high-frequency gain. Its f_T of 14 GHz (typ.) and G_ma of 15.5 dB @ 1.8 GHz confirm suitability for narrowband amplification up to 3.5 GHz.

The device operates with Z_Sopt = 100 + j10 Ω @ 1.8 GHz and exhibits monotonic IP3 improvement with collector current - reaching 24 dBm @ I_C = 15 mA - enabling linearity-critical receiver front-end designs without external matching complexity.

Key Specifications

Pinout & Package

Package: TSFP-3 (Thin Small Flat Package, 3-pin, leadless, 1.1 × 1.3 × 0.4 mm). Designed for RF layout with low-inductance solder pads and exposed collector pad for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFR 360F E6765, the BFR182W offers lower RF performance at reduced cost, while the MRF581 delivers higher f_T but sacrifices layout scalability and thermal efficiency due to through-hole packaging.

Availability

BFR 360F E6765 is available at Aetrix Electronics and suitable for GPS receivers, Bluetooth LE oscillators, UWB sensor nodes, and automotive radar IF amplifiers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BFR 360F E6765 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and qualification infrastructure.

The BFR series targets high-frequency analog signal conditioning, specifically engineered for low-noise, high-gain RF amplification in space-constrained wireless and automotive applications.

FAQ

What is the recommended bias condition for minimum noise figure?

For NF_min = 1.0 dB at 1.8 GHz, operate at I_C = 3 mA and V_CE = 3 V with source impedance Z_S = 100 + j10 Ω. This condition is validated per Infineon Application Note AN077 and confirmed by on-wafer S-parameter measurements.

Can BFR 360F E6765 be used in Class-C oscillator configurations?

Yes - its f_T ≥ 11 GHz and low C_cb enable stable oscillation up to 3.5 GHz in Colpitts and Clapp topologies. Verified operation includes 2.4 GHz Bluetooth LE VCOs with phase noise ≤ –115 dBc/Hz @ 1 MHz offset.

Is thermal derating required above 25°C ambient?

Yes - total power dissipation must be linearly derated above 25°C using R_thJS ≤ 250 K/W. At T_S = 75°C, P_tot drops to 150 mW; full 210 mW is only permissible when solder-point temperature remains ≤ 98°C per datasheet Figure 4.

Does this part include integrated ESD protection?

No - BFR 360F E6765 is classified as HBM Class 1B (≤ 250 V) and requires external ESD safeguards during PCB handling and assembly. Infineon explicitly states "ESD sensitive device" and mandates grounding straps, ionized air, and static-dissipative work surfaces.