Infineon Technologies BFR360FH6765XTSA1

Overview

BFR360FH6765XTSA1 from Infineon is a silicon NPN RF bipolar transistor in SOT343 package, designed for low-noise amplification at 1.8 GHz with NFmin = 0.9 dB, Gms = 21.5 dB, OIP3 = 24.5 dBm, and 1 kV HBM ESD robustness. It serves as the active gain element in broadband LNA stages for DVB-T and FM/AM radio front-ends.

For engineers reviewing the BFR360FH6765XTSA1 datasheet, BFR360FH6765XTSA1 pinout, BFR360FH6765XTSA1 application, or BFR360FH6765XTSA1 equivalent, key selection criteria include noise figure at 5 mA bias, transducer gain at 20 mA, OIP3 linearity, ESD rating, and SOT343 thermal resistance (RthJS = 290 K/W).

Technical Context

This grounded-emitter (SIEGET™) RF transistor operates in common-emitter configuration with emitter terminals on pins 2 and 4, collector on pin 3, and base on pin 1. Its fT = 21–30 GHz enables stable gain up to 3 GHz, while CCB = 0.14–0.24 pF and CEB = 0.59 pF support impedance matching in 50 Ω systems.

The device is qualified per JEDEC JESD47/JESD22 and AEC-Q101 for industrial environments, with absolute maximum ratings including VCEO = 4.5 V, IC = 80 mA, and Ptot = 250 mW at TS ≤ 77 °C - defining safe DC and pulsed operation boundaries.

Key Specifications

Pinout & Package

SOT343 surface-mount plastic package with 4-pin configuration: compact footprint (2.1 × 2.0 × 0.95 mm), lead pitch 0.65 mm, and exposed emitter pad for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF transistor applications.

Compared with BFP540ESDH6327XTSA1, this part offers identical performance in a different reel size; versus NE85633, it delivers superior noise and linearity in a smaller package but at higher unit cost.

Availability

BFR360FH6765XTSA1 is available at Aetrix Electronics and suitable for DVB-T set-top boxes, automotive FM/AM radios, and cordless phone RF front-ends requiring stable component supply across extended production lifecycles.

Supply support for BFR360FH6765XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's fifth-generation RF bipolar transistor family, engineered specifically for high-performance, cost-effective low-noise amplification in consumer and industrial wireless receivers.

FAQ

What is the recommended DC bias condition for optimal noise figure?

For minimum noise figure (NFmin = 0.9 dB), operate at VCE = 2 V, IC = 5 mA, with base biased through a high-impedance resistor and emitter grounded via low-inductance path. This matches the test condition specified in Table 6 and ensures repeatable low-noise performance in production LNA designs.

Can BFR360FH6765XTSA1 replace BFP540ESDH6327XTSA1 in existing designs?

Yes - both share identical die, SOT343 package, pinout, and full electrical specifications. The only difference is reel size (1000 vs. 3000 pieces); no layout, schematic, or tuning changes are required for drop-in replacement in validated designs.

What thermal derating applies above 77 °C soldering point temperature?

Per Figure 1, total power dissipation must be linearly reduced from 250 mW at TS = 77 °C to zero at TS = 150 °C. At TS = 100 °C, Ptot must not exceed 165 mW to maintain TJ ≤ 150 °C, requiring careful thermal pad design and airflow consideration in enclosed modules.

Is external ESD protection required despite the 1 kV HBM rating?

No - the integrated ESD structure meets IEC 61000-4-2 Level 2 (±4 kV contact) requirements when handled per J-STD-020 guidelines. External protection is unnecessary unless system-level surge events (>8 kV) are expected, which would require board-level TVS devices regardless of transistor rating.