Infineon Technologies BFR360L3E6765XTMA1

Overview

BFR360L3E6765XTMA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for 1.8–3.5 GHz operation in low-voltage, low-current amplifier and oscillator stages. It delivers NFmin = 1.0 dB at 1.8 GHz, fT = 14 GHz (typ), Gma = 16 dB at 1.8 GHz, P-1dB = 9 dBm, and IP3 = 24 dBm - enabling high-linearity front-end gain in compact wireless infrastructure and automotive radar receivers.

For engineers reviewing the BFR360L3E6765XTMA1 datasheet, BFR360L3E6765XTMA1 pinout, BFR360L3E6765XTMA1 application, or BFR360L3E6765XTMA1 equivalent, this device supports design of low-power, high-frequency LNA and VCO circuits where thermal resistance (RthJS = 220 K/W), TSLP-3-1 package footprint, and AEC-Q101 qualification are critical selection criteria.

Technical Context

This NPN RF transistor operates with VCEO = 6 V, IC = 35 mA max, and is characterized for small-signal amplification up to 6 GHz. Its fT ≥ 11 GHz and Ccb = 0.26 pF (typ) at 5 V support wideband matching in 50 Ω systems, while NFmin ≤ 1.0 dB at 1.8 GHz confirms suitability for noise-critical receive paths.

The device uses a grounded-emitter configuration with base bias control, and its transducer gain |S21|² = 13.5 dB at 1.8 GHz (ZS = ZL = 50 Ω) enables stable single-stage gain without neutralization. Thermal derating follows Ptot = 210 mW at TS ≤ 104 °C, with RthJS = 220 K/W defining junction-to-solder-point thermal path.

Key Specifications

Pinout & Package

TSLP-3-1 is a 3-pin thin small leadless plastic package with exposed thermal pad, measuring 1.1 × 0.7 × 0.37 mm. It supports reflow soldering and provides low-inductance connections ideal for RF layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFR360L3E6765XTMA1, BFP640FESD offers superior noise and bandwidth but at higher cost and tighter bias sensitivity, while MRF581 trades RF performance for mechanical compatibility and thermal margin in non-miniaturized systems.

Availability

BFR360L3E6765XTMA1 is available at Aetrix Electronics and suitable for automotive radar receivers, GNSS front-ends, ISM-band oscillators, and wireless infrastructure drivers requiring stable component supply with AEC-Q101 validation and RoHS compliance.

Supply support for BFR360L3E6765XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and RF solutions, with global R&D and manufacturing infrastructure.

The BFR360L3 belongs to Infineon's high-frequency bipolar transistor product line, engineered specifically for low-noise, high-linearity RF amplification and oscillation in automotive, industrial, and communications equipment up to 6 GHz.

FAQ

What is the recommended DC bias condition for optimal noise figure?

For minimum noise figure (NFmin = 1.0 dB), operate at IC = 3 mA and VCE = 3 V with source impedance ZS = ZSopt (typically ~20 + j10 Ω at 1.8 GHz). Bias must be stabilized using emitter degeneration and base voltage divider with bypass capacitors to suppress low-frequency oscillation.

Is the TSLP-3-1 package compatible with standard reflow profiles?

Yes - the TSLP-3-1 package is qualified for Pb-free reflow per JEDEC J-STD-020, with peak temperature ≤ 260 °C and time above 217 °C limited to 60–150 seconds. Thermal pad must be soldered to PCB ground plane for optimal RthJS and RF grounding.

Does this transistor require external neutralization for stability?

No - the BFR360L3E6765XTMA1 achieves unconditional stability up to 3 GHz under typical bias (IC = 15 mA, VCE = 3 V) due to low Ccb (0.26 pF) and favorable S-parameter phase behavior. Stability analysis using Rollett factor (K > 1) is still recommended for custom matching networks.

Can it be used in Class-C oscillator configurations?

Yes - the device is specified for oscillator use up to 3.5 GHz with Pout > 10 dBm. In Class-C operation, use parallel LC tank at collector and series-tuned base network to maximize efficiency and phase noise performance, ensuring VCE swing remains within 6 V rating.