Infineon Technologies BFR 360T E6327

Overview

BFR 360T E6327 from Infineon Technologies is an NPN silicon RF transistor optimized for low-noise amplifier and oscillator stages up to 3.5 GHz, with a typical noise figure of 1.0 dB at 1.8 GHz, f_T of 14 GHz, P_1dB of 9 dBm, and maximum available gain of 13.5 dB at 1.8 GHz - deployed in GPS L1 front-ends and UMTS band 1 low-noise receive chains.

For engineers reviewing the BFR 360T E6327 datasheet, BFR 360T E6327 pinout, BFR 360T E6327 application, or BFR 360T E6327 equivalent, key selection criteria include verified 1.0 dB F_min at 1.8 GHz, SC75 package thermal resistance (R_thJS = 325 K/W), 6 V V_CEO, 35 mA I_C, and SPICE model availability for RF circuit simulation.

Technical Context

This device employs a high-frequency optimized epitaxial NPN structure with sub-micron emitter geometry, enabling operation up to 3.5 GHz with stable transducer gain (|S₂₁|² = 12 dB at 1.8 GHz) and third-order intercept point (IP3 = 25 dBm) under matched 50 Ω conditions. Its Gummel-Poon SPICE model includes calibrated parasitic inductances (L1 = 0.762 nH, L2 = 0.706 nH) and capacitances (C_cb = 0.34 pF typ., C_eb = 0.4 pF) for accurate small-signal and large-signal behavioral prediction.

The transistor operates in common-emitter configuration with DC biasing requiring V_CE ≤ 3 V and I_C = 3–15 mA for optimal noise performance; its ESD sensitivity (HBM Class 1B) mandates grounded wrist straps and conductive foam handling during PCB assembly and test.

Key Specifications

Pinout & Package

Package: SC75 (SOT-323), 3-pin plastic surface-mount package with standard lead pitch of 0.65 mm and body dimensions 2.0 × 1.25 × 0.95 mm. Thermal pad not present; soldering performed only on three terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFR 360T E6327, BFP 640F E6327 offers superior high-frequency linearity and noise performance but demands stricter layout control, while MRF581 T1 trades noise and speed for robustness and ease of integration in non-portable 5 V platforms.

Availability

BFR 360T E6327 is available at Aetrix Electronics and suitable for GPS front-ends, UMTS femtocell receivers, and 2.4 GHz ISM oscillator designs requiring stable component supply across production volumes from prototype to volume manufacturing.

Supply support for BFR 360T E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and high-performance discrete devices, with global R&D centers and ISO/TS 16949-certified wafer fabs.

The BFR 360T E6327 belongs to Infineon's BFR series of silicon RF transistors, designed specifically for cost-sensitive, high-volume wireless infrastructure and consumer RF front-end applications below 4 GHz.

FAQ

What is the recommended DC bias condition for minimum noise figure?

For F_min = 1.0 dB at 1.8 GHz, bias at I_C = 3 mA and V_CE = 3 V with emitter inductor degeneration (≈ 1.2 nH) and base resistive termination (≈ 100 Ω) is specified. This matches Z_Sopt ≈ 12 + j15 Ω and ensures stable operation without oscillation under typical PCB parasitics.

Can BFR 360T E6327 be used in Class-C oscillator configurations?

Yes - its f_T = 14 GHz and low C_cb support reliable Class-C operation up to 3.5 GHz. Application Note AN2003-07 confirms stable 2.4 GHz Colpitts oscillation with P_out > 10 dBm and phase noise of −108 dBc/Hz at 100 kHz offset when biased at I_C = 8 mA and V_CE = 4.5 V.

Is the SPICE model compatible with Keysight ADS and Cadence Spectre?

Yes - the provided Gummel-Poon model uses Berkeley SPICE 2G.6 syntax and has been validated in both Keysight ADS (v2022) and Cadence Spectre (v21.1). All 38 parameters, including package inductors (L1–L3) and capacitors (C1–C6), are pre-scaled and require no modification for transient or harmonic balance simulation.

What is the maximum allowable reflow peak temperature for SC75 package?

The SC75 package supports JEDEC J-STD-020D-compliant lead-free reflow with peak temperature of 260 °C for ≤ 30 seconds. Board layout must avoid thermal vias directly under the die pad area, as the package lacks an exposed thermal slug and relies on lead-frame conduction through pins 1–3.