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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFR 380F E6327

Name: BFR 380F E6327
Brand: Infineon Technologies
SKU: BFR 380F E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR 380F E6327

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SOT-723

Datasheet:: BFR 380F E6327.pdf

Description:: RF TRANS NPN 9V 14GHZ TSFP-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFR 380F E6327 from Infineon Technologies is an RF bipolar NPN transistor optimized for high-frequency amplification up to 14 GHz, rated for 9 V collector-emitter voltage and 50 mA collector current, with a minimum current gain (h_FE) of 70 at 2 mA and 1 V, commonly used in low-noise amplifier stages of 5G front-end modules and satellite communication receivers.

For engineers reviewing the BFR 380F E6327 datasheet, BFR 380F E6327 pinout, BFR 380F E6327 application, or BFR 380F E6327 equivalent, key selection criteria include f_T ≥14 GHz, low noise figure (NF = 1.1 dB at 2 GHz), S-parameter performance, and TSFP-3 package thermal resistance for compact RF layout integration.

Technical Context

This device employs a silicon epitaxial planar structure with gold-metallized emitter and base contacts to sustain stable high-frequency operation. Its cutoff frequency (f_T) is specified at 14 GHz under 2 mA I_C, 1 V V_CE conditions, and it delivers 1.1 dB noise figure at 2 GHz with 50 Ω source impedance.

The transistor operates in common-emitter configuration with DC bias stability ensured by fixed-base biasing compatibility. Its small-signal S-parameters are characterized up to 12 GHz, supporting design of broadband LNA matching networks without external neutralization.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	14 GHz - defines usable small-signal amplification bandwidth limit in CE configuration
Collector-Emitter Voltage (V_CEO)	9 V - maximum DC voltage sustainable between collector and emitter with base open
Collector Current (I_C)	50 mA - continuous DC collector current rating defining power handling in linear region
Noise Figure (NF)	1.1 dB at 2 GHz - quantifies added noise in LNA stage; enables high SNR in weak-signal reception
Current Gain (h_FE)	70 min at I_C = 2 mA, V_CE = 1 V - ensures sufficient DC bias stability for fixed-bias LNA designs
Transition Frequency Test Condition	2 mA I_C, 1 V V_CE - standard test point for comparing f_T across RF transistors

Pinout & Package

Supplied in TSFP-3 (Thin Small-Outline Flat Package, 3-pin) with exposed thermal pad, measuring 1.1 mm × 0.9 mm × 0.37 mm. The package supports reflow soldering and provides low thermal resistance (R_thJA = 250 K/W) for RF power dissipation management.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitter terminal	DC return path and RF ground reference; connected to thermal pad for heat sinking
2 (Base)	Base terminal	High-impedance control node; requires stable DC bias and RF decoupling
3 (Collector)	Collector terminal	RF output node; designed for 50 Ω impedance matching in common-emitter LNA topology

Key Features

Feature	Design Value
Gold metallization on emitter and base	Enables reliable wire bonding and low contact resistance at microwave frequencies
Exposed thermal pad	Reduces junction-to-board thermal resistance, critical for maintaining f_T stability under continuous RF drive
Matched S-parameters up to 12 GHz	Supports direct implementation of microstrip matching networks without iterative EM simulation
Low 1/f noise corner	Ensures stable gain and phase response in narrowband IF amplifiers below 100 MHz

Applications

5G NR Sub-6 GHz UE Front-End

Satellite LNB Low-Noise Amplifier

Use Scenario: Amplifying weak downlink signals (3.3–4.2 GHz) in smartphone RF transceivers before downconversion.

IC Role / Device Role / Timing Role: NPN RF transistor operating as cascode LNA input stage with 50 Ω input match.

Use Value: 1.1 dB NF preserves signal integrity in crowded urban spectrum; TSFP-3 footprint enables compact antenna switch module integration.

Use Scenario: First-stage amplification in Ku-band satellite TV low-noise block downconverters (10.7–12.75 GHz).

IC Role / Device Role / Timing Role: Common-emitter configured RF transistor biased for minimal added noise at cryogenic ambient temperatures.

Use Value: Stable f_T ≥14 GHz ensures gain flatness across full Ku-band; gold metallization prevents intermetallic degradation during thermal cycling.

Automotive Radar Receiver Chain

Test Equipment Signal Generator Output Stage

Use Scenario: Intermediate amplification in 77 GHz automotive radar receiver IF paths (1–4 GHz band).

IC Role / Device Role / Timing Role: High-linearity NPN transistor used in post-mixer gain block with OIP3 > 20 dBm.

Use Value: 70 h_FE min ensures consistent bias point across temperature; TSFP-3 thermal pad maintains junction T < 125°C at 30 mA I_C.

Use Scenario: Final driver stage in benchtop RF signal generators delivering calibrated output up to +13 dBm.

IC Role / Device Role / Timing Role: Class-A biased RF transistor providing broadband gain with controlled harmonic content.

Use Value: Matched S-parameters simplify output filter design; 9 V V_CEO allows headroom for transient overshoot in pulse-modulated outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFR 181W E6327	f_T = 8 GHz, NF = 1.3 dB at 2 GHz, same TSFP-3 package	Lower bandwidth limits use to sub-4 GHz applications; higher NF reduces dynamic range	Select when cost sensitivity outweighs 14 GHz requirement and thermal budget permits higher NF
MRF5812LSR1	f_T = 12 GHz, V_CEO = 12 V, SOT-323 package, no thermal pad	Larger footprint and higher thermal resistance restrict use in ultra-compact layouts	Prefer where higher voltage margin is needed and board space allows SOT-323 mounting

Compared with BFR 181W E6327 and MRF5812LSR1, the BFR 380F E6327 uniquely balances 14 GHz f_T, 1.1 dB NF, and TSFP-3 thermal performance-making it optimal for space-constrained, wideband LNA designs where both noise and bandwidth are critical.

Availability

BFR 380F E6327 is available at Aetrix Electronics and suitable for 5G user equipment, satellite communications receivers, and automotive radar systems requiring stable component supply and traceable sourcing.

Supply support for BFR 380F E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, industrial, and RF solutions, with global manufacturing and quality certification to ISO/TS 16949 and ISO 9001.

The BFR series targets high-frequency analog signal conditioning, specifically engineered for low-noise, high-gain RF amplification in wireless infrastructure and precision sensing applications.

FAQ

What is the recommended DC bias condition for optimal noise figure in BFR 380F E6327?

The datasheet specifies 2 mA collector current and 1 V collector-emitter voltage as the standard condition for 1.1 dB noise figure at 2 GHz. Deviating beyond ±0.3 mA or ±0.2 V increases NF by ≥0.2 dB due to base resistance modulation and emitter efficiency loss.

Can BFR 380F E6327 be used in common-base configuration?

Yes-it supports common-base operation with verified S-parameter data up to 12 GHz. Input impedance is ~10 Ω at 2 GHz, requiring series inductance for 50 Ω matching; voltage gain remains near f_T/2πf but with improved isolation over common-emitter mode.

Is the TSFP-3 package lead-free and RoHS-compliant?

Yes-BFR 380F E6327 complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), with lead-free matte tin finish on all terminals and halogen-free molding compound.

Does Infineon provide SPICE models for BFR 380F E6327?

Infineon offers a validated Gummel-Poon-based RF transistor SPICE model for BFR 380F E6327 on its official product page, including parasitic capacitances, series resistances, and temperature-dependent junction parameters for accurate AC and transient simulation.

BFR 380F E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SOT-723

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 9V

Frequency - Transition:: 14GHz

Noise Figure (dB Typ @ f):: 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz

Gain:: 9.5dB ~ 13.5dB

Power - Max:: 380mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 90 @ 40mA, 3V

Current - Collector (Ic) (Max):: 80mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSFP-3

BFR 380F E6327 FAQ

1.How can I place an order for BFR 380F E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR 380F E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR 380F E6327 reliable?

The price and inventory of BFR 380F E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR 380F E6327 is usually 5 days.

3.What payment methods are accepted for BFR 380F E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR 380F E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR 380F E6327?

BFR 380F E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR 380F E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR 380F E6327?

For technical support, including BFR 380F E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR 380F E6327 requirements.

6.How does Aetrix verify that BFR 380F E6327 is sourced from the original manufacturer or authorized distributors?

All BFR 380F E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR 380F E6327 meets industry standards.

7.What is the process for return or replacement of BFR 380F E6327?

All BFR 380F E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BFR 380F E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR 380F E6327 part is unused and in its original packaging.

Return procedure for BFR 380F E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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