Infineon Technologies BFR380FH6327XTSA1

Overview

BFR380FH6327XTSA1 from Infineon is a low-noise NPN RF bipolar transistor in TSFP-3-1 package, optimized for high-frequency linear amplification up to 3.5 GHz. It delivers NFmin = 1.1 dB at 1.8 GHz (3 V, 8 mA), Gma = 13.5 dB at 1.8 GHz (3 V, 40 mA), and OIP3 = 29 dBm at 1.8 GHz - enabling high-sensitivity, high-linearity LNAs in TV white space and sub-1 GHz ISM band receivers.

For engineers reviewing the BFR380FH6327XTSA1 datasheet, BFR380FH6327XTSA1 pinout, BFR380FH6327XTSA1 application, or BFR380FH6327XTSA1 equivalent, key selection criteria include noise figure vs. bias current trade-off, transducer gain stability across 0.9–3 GHz, OIP3 linearity at 40 mA collector current, and TSFP-3-1 thermal resistance (RthJS = 145 K/W) for compact RF front-end layouts.

Technical Context

The BFR380FH6327XTSA1 employs silicon-based epitaxial NPN structure with optimized base doping and geometry to achieve fT = 11–14 GHz at IC = 40 mA, VCE = 3 V. Its low CCB (0.5–0.7 pF) and CEB (~1 pF) support wideband impedance matching in 50 Ω systems.

Designed for fixed-bias LNA stages, it operates with DC current gain hFE = 90–160 (VCE = 3 V, IC = 40 mA), and maintains stable NFmin ≤ 1.6 dB up to 3 GHz under industrial temperature conditions (−55 °C to +150 °C TJ).

Key Specifications

Pinout & Package

Package: TSFP-3-1 - ultra-thin, surface-mount, leadless plastic package with exposed emitter pad for thermal enhancement and RF grounding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF bipolar transistor applications.

Compared with BFP640FH6327XTSA1, the BFR380FH6327XTSA1 trades 2.2 dB lower NF and 11 GHz higher fT for smaller TSFP-3-1 footprint and JEDEC industrial qualification; versus MRF581W1, it offers broader frequency coverage (up to 3.5 GHz) and guaranteed reliability over extended temperature, at modest OIP3 reduction.

Availability

BFR380FH6327XTSA1 is available at Aetrix Electronics and suitable for DVB-T/H receivers, TV white space cognitive radios, and sub-1 GHz ISM band transceivers requiring stable component supply and industrial-grade reliability.

Supply support for BFR380FH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and RF solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The BFR380F belongs to Infineon's third-generation Si RF bipolar transistor family, engineered specifically for cost-sensitive, high-volume consumer and industrial RF front-ends demanding low noise, high linearity, and robust thermal performance in compact packages.

FAQ

What is the recommended DC bias condition for minimum noise figure?

The BFR380FH6327XTSA1 achieves NFmin = 1.1 dB at VCE = 3 V and IC = 8 mA. This bias point requires precise base current control via resistor divider or active current source; emitter degeneration is not needed due to inherent linearity at this current level.

Can this transistor be used above 3.5 GHz?

While fT reaches 14 GHz, usable gain drops below 3 dB above 3.5 GHz per measured S21 data. The device is characterized and specified up to 3.5 GHz; operation beyond that requires custom validation of gain compression and noise degradation at target frequencies.

Is the TSFP-3-1 package compatible with standard reflow profiles?

Yes - the TSFP-3-1 package is qualified for lead-free reflow per J-STD-020D. Peak temperature must not exceed 260 °C for ≤ 30 seconds; the exposed emitter pad requires adequate thermal relief and solder paste stencil design to ensure void-free attachment.

How does junction temperature affect OIP3 performance?

OIP3 decreases by approximately 0.15 dB per °C rise in junction temperature above 25 °C, as confirmed by thermal AC characterization. Maintaining TJ ≤ 90 °C via proper heatsinking or reduced IC bias preserves >95% of rated 29 dBm OIP3 at 1.8 GHz.