Infineon Technologies BFR380TE6327

Overview

BFR380TE6327 from Infineon Technologies is an NPN silicon RF transistor optimized for low-phase-noise oscillators up to 3.5 GHz, featuring a noise figure of 1.1 dB at 1.8 GHz, transition frequency (f_T) of 14 GHz typ., and maximum available power gain of 12.5 dB at 1.8 GHz - deployed in cellular front-end modules and VCOs for GSM/UMTS infrastructure.

For engineers reviewing the BFR380TE6327 datasheet, BFR380TE6327 pinout, BFR380TE6327 application, or BFR380TE6327 equivalent, key selection criteria include its SC75 package compatibility, 1.1 dB F_min at 1.8 GHz, 14 GHz f_T, 380 mW P_tot, and ESD-sensitive handling requirements.

Technical Context

This RF transistor employs a high-frequency optimized epitaxial NPN structure with Gummel-Poon SPICE parameters extracted for accurate large-signal simulation. Its low C_cb (0.5 pF typ.) and C_eb (1 pF typ.) support wideband matching up to 6 GHz.

The device operates under low-voltage bias (V_CE = 3 V) with DC current gain (h_FE) ranging from 60 to 200 at I_C = 40 mA, enabling stable small-signal amplification and oscillator core functionality in compact RF designs.

Key Specifications

Pinout & Package

Package: SC75 (SOT-323), surface-mount, 3-pin plastic package with standard footprint per DIN 6784; marking "FCs" on top; reel packaging code E6327 (3,000 pcs/reel, ø180 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFR92A and MRF581, BFR380TE6327 offers superior noise performance and bandwidth within the SC75 thermal envelope, making it the preferred choice for 1.8–3.5 GHz oscillator and driver applications demanding ≤1.1 dB F_min and ≥12 dB gain.

Availability

BFR380TE6327 is available at Aetrix Electronics and suitable for GSM/UMTS infrastructure, wireless base station VCOs, and ISM-band receiver LNAs requiring stable component supply, consistent parametric binning, and ESD-safe logistics handling.

Supply support for BFR380TE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

The BFR380TE6327 belongs to Infineon's high-frequency discrete transistor product line, engineered specifically for low-noise, high-gain RF signal generation and amplification in wireless infrastructure and mobile communication systems.

FAQ

Is BFR380TE6327 pin-compatible with BFR380T?

Yes - BFR380TE6327 uses the same SC75 package and identical pin configuration (Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector) as the base BFR380T. The "E6327" suffix denotes tape-and-reel packaging (3,000 pcs/reel, ø180 mm) and does not affect electrical or mechanical compatibility.

What is the recommended bias condition for low-noise oscillator use?

For optimal 1.1 dB F_min at 1.8 GHz, operate at I_C = 8 mA and V_CE = 3 V with source impedance matched to Z_Sopt ≈ 25 + j15 Ω. Base bias must be stabilized using emitter degeneration and RF choke to suppress parasitic oscillations.

Does BFR380TE6327 require special PCB layout considerations?

Yes - due to its 14 GHz f_T, maintain short (<1 mm), symmetric RF traces; use solid ground plane beneath SC75 pad; implement thermal vias under collector pad; and isolate base/emitter nodes from noisy digital lines to preserve noise figure and stability.

Can BFR380TE6327 be used in Class-C amplifier configurations?

No - its DC current gain (h_FE = 60–200) and low V_(BR)CEO (6 V) limit safe operation to Class-A or Class-AB. Class-C switching stresses exceed its 15 V V_CES rating and risks avalanche degradation under harmonic-rich loads.