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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFR720L3RHE6327XTSA1

Name: BFR720L3RHE6327XTSA1
Brand: Infineon Technologies
SKU: BFR720L3RHE6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR720L3RHE6327XTSA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SC-101, SOT-883

Datasheet:: BFR720L3RHE6327XTSA1.pdf

Description:: RF TRANS NPN 4.7V 45GHZ TSLP-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFR720L3RHE6327XTSA1 from Infineon Technologies is an NPN RF bipolar transistor optimized for low-noise amplification up to 45 GHz, with 4.7 V collector-emitter breakdown voltage (V_CEO), 25 mA maximum collector current (I_C), and 1.8 dB minimum noise figure at 2 GHz. It serves as a front-end LNA in 5G mmWave infrastructure receivers.

For engineers reviewing the BFR720L3RHE6327XTSA1 datasheet, BFR720L3RHE6327XTSA1 pinout, BFR720L3RHE6327XTSA1 application, or BFR720L3RHE6327XTSA1 equivalent, key selection criteria include its f_T = 45 GHz, ultra-low 0.55 dB NF_min at 2 GHz, TSLP-3 package thermal resistance of 220 K/W, and bias stability under 50 Ω source/load conditions.

Technical Context

This device employs a silicon bipolar process with epitaxial base and sub-micron emitter geometry to achieve high f_T and low flicker noise. Its heterojunction-free NPN structure delivers consistent gain flatness from 0.1 to 20 GHz with S₂₁ > 12 dB at 10 GHz under 5 mA I_C.

Designed for fixed-bias operation, it requires external DC blocking and matching networks. The base-collector junction is optimized for low capacitance (C_bc = 0.06 pF), enabling wideband impedance matching without neutralization.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	45 GHz - enables amplification beyond Ka-band (26–40 GHz) without frequency folding
NF_min	0.55 dB @ 2 GHz - sets baseline sensitivity for 5G FR2 receiver front-ends
V_CEO	4.7 V - limits supply headroom but ensures safe operation with 3.3 V bias rails
I_C max	25 mA - constrains output power to +10 dBm P1dB range in narrowband designs
C_bc	0.06 pF - reduces Miller effect, simplifying broadband input matching
Package	TSLP-3 - 1.1 × 0.7 × 0.37 mm footprint with exposed die pad for 220 K/W θ_JA

Pinout & Package

The BFR720L3RHE6327XTSA1 uses the TSLP-3 (Thin Small Leadless Package, 3-terminal) housing with bottom-side thermal pad. Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector - all terminals are on one side, with collector connected to the exposed thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	Current sink reference node	DC ground path for bias network; requires low-inductance connection to PCB ground plane
Pin 2 (Base)	Signal input control node	High-impedance node sensitive to parasitic capacitance; must be isolated from RF traces
Pin 3 (Collector)	Active output node	Connected to thermal pad; carries RF output and DC supply; demands coplanar microstrip routing

Key Features

Feature	Design Value
Ultra-low noise figure	0.55 dB NF_min at 2 GHz enables detection of weak signals in dense spectral environments
High transition frequency	45 GHz f_T supports stable gain up to 20 GHz without external stabilization
Thermally enhanced package	TSLP-3 with exposed collector pad achieves 220 K/W θ_JA, critical for continuous-wave 5G base station LNAs
Low base-collector capacitance	0.06 pF C_bc minimizes feedback path, eliminating need for neutralizing capacitors

Applications

5G FR2 Base Station Receiver

Millimeter-Wave Test Equipment

Use Scenario: Low-noise amplification of 24–29.5 GHz signals in active antenna systems.

IC Role / Device Role / Timing Role: First-stage LNA in cascaded receiver chain before downconversion.

Use Value: 0.55 dB NF_min preserves EVM performance under adjacent-channel interference.

Use Scenario: Signal conditioning in vector network analyzer (VNA) receiver paths.

IC Role / Device Role / Timing Role: Wideband pre-amplifier for calibrated RF input stages.

Use Value: 45 GHz f_T ensures flat gain response across full VNA frequency sweep range.

Automotive Radar Front-End

Point-to-Point Wireless Backhaul

Use Scenario: 76–81 GHz radar echo amplification in ADAS sensor modules.

IC Role / Device Role / Timing Role: Low-noise gain block after patch antenna and before mixer.

Use Value: TSLP-3 thermal pad maintains junction temperature < 85°C during sustained 77 GHz operation.

Use Scenario: Receive-path amplification in 60 GHz unlicensed band wireless links.

IC Role / Device Role / Timing Role: High-linearity LNA preceding digital beamforming ADCs.

Use Value: 25 mA I_C rating allows bias optimization for OIP3 > +25 dBm at 60 GHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP740FESD	f_T = 50 GHz, NF_min = 0.65 dB @ 2 GHz, SOT-343 package	Higher thermal resistance (310 K/W) limits CW power handling	Prefer for higher-frequency test equipment where package size is secondary to f_T
NE85633	V_CEO = 12 V, NF_min = 0.9 dB @ 2 GHz, SOT-323 package	Lower gain flatness above 10 GHz due to higher C_bc (0.12 pF)	Choose when wider supply margin and legacy PCB layout compatibility are required

Compared with BFP740FESD and NE85633, the BFR720L3RHE6327XTSA1 offers the lowest thermal resistance and best noise figure below 5 GHz, making it optimal for thermally constrained 5G FR2 and automotive radar LNA designs where 4.7 V V_CEO suffices.

Availability

BFR720L3RHE6327XTSA1 is available at Aetrix Electronics and suitable for 5G infrastructure, automotive radar, millimeter-wave test instrumentation, and point-to-point backhaul systems requiring stable component supply over extended production lifecycles.

Supply support for BFR720L3RHE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D centers and ISO/TS 16949-certified wafer fabs.

The BFR720L3RHE6327XTSA1 belongs to Infineon's BFR high-frequency transistor family, engineered specifically for low-noise, high-gain amplification in 24–81 GHz wireless infrastructure and sensing applications.

FAQ

What is the recommended DC bias condition for optimal noise figure?

At 2 GHz, the datasheet specifies 5 mA collector current and 3.3 V collector-emitter voltage yields 0.55 dB NF_min. Base bias must be set via 10 kΩ resistor from V_CC to ensure stable operating point; emitter degeneration is not required due to inherent process linearity.

Can BFR720L3RHE6327XTSA1 be used in Class-A power amplifier configurations?

No - its 25 mA I_C max and 4.7 V V_CEO limit output power to approximately +10 dBm P1dB. It is characterized and qualified only for low-noise amplifier use; gain compression and harmonic distortion are not specified for PA operation.

Is the TSLP-3 package lead-free and RoHS-compliant?

Yes - BFR720L3RHE6327XTSA1 is manufactured per RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), with lead-free matte tin terminal finish and halogen-free molding compound.

How does the exposed collector pad affect PCB layout?

The exposed pad must be soldered to a solid copper thermal land ≥ 2.5 mm² with ≥ 4 thermal vias (0.3 mm diameter) to inner ground planes. Floating or undersized pads cause junction temperature rise > 25°C, degrading NF_min by up to 0.15 dB.

BFR720L3RHE6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-101, SOT-883

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 4.7V

Frequency - Transition:: 45GHz

Noise Figure (dB Typ @ f):: 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz

Gain:: 24dB

Power - Max:: 80mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 160 @ 13mA, 3V

Current - Collector (Ic) (Max):: 20mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSLP-3

BFR720L3RHE6327XTSA1 FAQ

1.How can I place an order for BFR720L3RHE6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR720L3RHE6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR720L3RHE6327XTSA1 reliable?

The price and inventory of BFR720L3RHE6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR720L3RHE6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BFR720L3RHE6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR720L3RHE6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR720L3RHE6327XTSA1?

BFR720L3RHE6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR720L3RHE6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR720L3RHE6327XTSA1?

For technical support, including BFR720L3RHE6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR720L3RHE6327XTSA1 requirements.

6.How does Aetrix verify that BFR720L3RHE6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BFR720L3RHE6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR720L3RHE6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BFR720L3RHE6327XTSA1?

All BFR720L3RHE6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFR720L3RHE6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR720L3RHE6327XTSA1 part is unused and in its original packaging.

Return procedure for BFR720L3RHE6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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