Infineon Technologies BFR750L3RHE6327

Overview

BFR750L3RHE6327 from Infineon Technologies is an NPN silicon germanium RF transistor optimized for ultra-low-noise, high-gain amplification in 5–6 GHz wireless systems. It delivers 21 dB maximum stable gain at 1.8 GHz, 11.5 dB maximum available gain at 6 GHz, and 0.6 dB noise figure at 1.8 GHz, with 150 GHz f_T and TSLP-3-9 leadless package (0.32 mm max height). It is qualified per AEC-Q101 and used in WLAN front-end driver stages.

For engineers reviewing the BFR750L3RHE6327 datasheet, BFR750L3RHE6327 pinout, BFR750L3RHE6327 application, or BFR750L3RHE6327 equivalent, key selection criteria include verified 6 GHz small-signal gain, Z_Sopt-matched noise performance, OIP3 of 29.5 dBm, P-1dB of 16.5 dBm, and thermal resistance ≤150 K/W under PCB-soldering-point conditions.

Technical Context

This SiGe NPN transistor employs a Gummel-Poon model with validated SPICE parameters (e.g., BF = 753, f_T = 37 GHz typ., C_cb = 0.24–0.42 pF) and operates with V_CE up to 4 V and I_C up to 90 mA. Its design targets broadband RF amplification where low-noise figure and high linearity are critical.

The device achieves stable gain across 1.8–6 GHz using emitter degeneration and base-collector capacitance control (C_cb, C_ce, C_eb all specified), with thermal management enabled by R_thJS ≤150 K/W and junction temperature rated to 150°C.

Key Specifications

Pinout & Package

Package: TSLP-3-9 - ultra-thin (0.32 mm max height), leadless surface-mount package with exposed die pad for thermal conduction; RoHS-compliant, AEC-Q101 qualified.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-noise RF transistor applications.

Compared with BFP740FESD and NE85633, BFR750L3RHE6327 uniquely balances 6 GHz gain, 0.6 dB NF, AEC-Q101 qualification, and 0.32 mm profile - making it optimal for space- and performance-constrained 5–6 GHz automotive and industrial WLAN modules.

Availability

BFR750L3RHE6327 is available at Aetrix Electronics and suitable for 5 GHz WLAN access points, Wi-Fi 6E client devices, and automotive radar IF amplifiers requiring stable component supply, consistent parametric binning, and long-term lifecycle support.

Supply support for BFR750L3RHE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and R&D centers.

The BFR750L3RHE6327 belongs to Infineon's BFR series of SiGe RF transistors, designed specifically for high-frequency, low-noise amplification in wireless infrastructure and automotive radar front ends.

FAQ

What is the recommended DC bias condition for optimal noise figure at 6 GHz?

At 6 GHz, the datasheet specifies optimal noise figure (1.1 dB max) occurs at I_C = 25 mA and V_CE = 3 V with Z_S = Z_Sopt. The corresponding Z_Sopt is 12 + j18 Ω - requiring a lossless matching network from 50 Ω source to this impedance. Bias must be stabilized with RC filtering to suppress VCO pulling.

Can BFR750L3RHE6327 be used in Class AB operation?

Yes - the device supports Class AB biasing with I_C adjustable from 10 mA to 90 mA. At I_C = 60 mA and V_CE = 3 V, it achieves 16.5 dBm P-1dB and 29.5 dBm OIP3. Thermal derating is required above 96°C case temperature per the P_tot vs. T_S curve.

Is the TSLP-3-9 package compatible with standard reflow profiles?

Yes - the RoHS-compliant TSLP-3-9 package is qualified for lead-free reflow per J-STD-020. Peak temperature must not exceed 260°C for ≤30 seconds. Board layout must follow Infineon's recommended stencil aperture (0.38 × 0.2 mm) and copper land pattern (0.575 × 0.4 mm) to ensure void-free solder joints and thermal integrity.

Does BFR750L3RHE6327 require external ESD protection?

Yes - it is ESD-sensitive (HBM Class 1B, ±500 V). External TVS diodes or ferrite-bead-filtered bias lines are recommended on base and collector nodes. PCB layout must include grounded guard rings around the transistor footprint and avoid routing high-dV/dt signals near pins 1–3.