Infineon Technologies BFR750L3RHE6327XTSA1

Overview

BFR750L3RHE6327XTSA1 from Infineon Technologies is an NPN silicon germanium RF transistor optimized for ultra-low-noise, high-gain amplification up to 6 GHz. It delivers 21 dB maximum stable gain at 1.8 GHz, 11.5 dB maximum available gain at 6 GHz, and 0.6 dB noise figure at 1.8 GHz, with 29.5 dBm OIP3 and 16.5 dBm P-1dB output power - ideal for WLAN and 5–6 GHz front-end driver stages.

For engineers reviewing the BFR750L3RHE6327XTSA1 datasheet, BFR750L3RHE6327XTSA1 pinout, BFR750L3RHE6327XTSA1 application, or BFR750L3RHE6327XTSA1 equivalent, key selection criteria include f_T = 37 GHz, C_cb = 0.24–0.42 pF, TSLP-3-9 package (0.32 mm max height), RoHS-compliant leadless construction, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This SiGe NPN transistor employs a high-f_T (37 GHz typ.) heterojunction structure enabling broadband operation from sub-1 GHz through 6 GHz. Its Gummel-Poon SPICE model includes validated parasitic inductances (L_{bb_chip} = 0.212 nH, L_{cc_pack} = 0.277 nH) and capacitances (C_{cb_chip} = 0.013 pF, C_{ce_pack} = 0.0492 pF), supporting accurate RF circuit simulation up to 6 GHz.

Designed for impedance-matched 50 Ω systems, it achieves transducer gain of 18 dB at 1.8 GHz and 8 dB at 6 GHz under Z_S = Z_L = 50 Ω conditions. Bias stability is ensured by h_FE = 160–400 (IC = 60 mA, V_CE = 3 V), with thermal resistance R_thJS ≤ 150 K/W enabling reliable operation at T_j ≤ 150 °C.

Key Specifications

Pinout & Package

TSLP-3-9 is an ultra-thin, leadless surface-mount package measuring 0.6 × 0.35 mm with 0.32 mm max height and solderable terminals on three sides. Its compact footprint and low parasitic inductance support high-frequency PCB layout integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF transistor applications.

Compared with BFP740FESD and NE85633, BFR750L3RHE6327XTSA1 uniquely balances 37 GHz f_T, AEC-Q101 qualification, ultra-thin TSLP-3-9 packaging, and full SPICE model support - making it optimal for next-generation 5–6 GHz automotive and industrial wireless systems demanding both performance and reliability.

Availability

BFR750L3RHE6327XTSA1 is available at Aetrix Electronics and suitable for WLAN 5 GHz front-end drivers, automotive V2X transceivers, and industrial IoT sensor hub RF interfaces requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BFR750L3RHE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's BFR series of high-frequency SiGe transistors, engineered specifically for low-noise, high-gain RF amplification in wireless infrastructure, automotive radar, and consumer connectivity applications up to 10 GHz.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The absolute maximum junction temperature is 150 °C. With R_thJS ≤ 150 K/W and P_tot = 360 mW at T_S ≤ 96 °C, thermal design must ensure solder-point temperature stays below 96 °C under worst-case ambient and power dissipation. Layout must use ≥2 thermal vias per pad and minimize copper isolation around the TSLP-3-9 footprint.

Is the BFR750L3RHE6327XTSA1 suitable for DC-coupled amplifier configurations?

Yes - its V_CEO = 4 V and V_CES = 13 V allow DC-coupled operation in 3.3 V supply rails with appropriate emitter degeneration. However, the base-emitter breakdown voltage is only 1.2 V, so base bias networks must limit reverse V_EB to <0.5 V during power-up or transient events.

How does the TSLP-3-9 package impact RF matching network design?

The TSLP-3-9's ultra-low profile (0.32 mm) and minimal lead inductance (L_{bb_pack} = 0.0184 nH) reduce parasitic reactance, enabling simpler, more predictable 50 Ω matching networks. Package parasitics are fully modeled in the provided SPICE file, allowing EM-simulation-free pre-layout optimization up to 6 GHz.

Can this transistor be used in Class-A, Class-AB, or Class-C amplifier topologies?

It is characterized and optimized for Class-A operation (IC = 60 mA, V_CE = 3 V), delivering specified G_ms, NF, and OIP3. While Class-AB is feasible with reduced quiescent current, Class-C is not recommended due to lack of pulse-rated characterization and potential instability from nonlinear C_eb/C_cb variation outside the tested DC bias envelope.