Infineon Technologies BFR843EL3E6327XTSA1

Overview

BFR843EL3E6327XTSA1 from Infineon is a low-noise, pre-matched NPN RF bipolar transistor in TSLP-3-10 package, optimized for 2.4 GHz and 5.5 GHz LNA stages. It delivers NFmin = 1.0 dB at 2.4 GHz (1.8 V, 8 mA), Gms = 24 dB at 2.4 GHz (1.8 V, 15 mA), and OIP3 = 20.5 dBm across both bands - enabling high-sensitivity WLAN and GNSS front-ends.

For engineers reviewing the BFR843EL3E6327XTSA1 datasheet, BFR843EL3E6327XTSA1 pinout, BFR843EL3E6327XTSA1 application, or BFR843EL3E6327XTSA1 equivalent, key selection criteria include verified noise figure vs. frequency, ESD hardness (1 kV HBM), dual-band gain flatness, and compatibility with 1.2–1.8 V low-voltage biasing in compact RF layouts.

Technical Context

This transistor employs a silicon bipolar process with integrated pre-matching network to minimize external component count in 50 Ω systems. Its f_T > 30 GHz enables stable low-noise operation up to 5.5 GHz without neutralization or complex stabilization networks.

The device operates as a common-emitter amplifier with fixed DC bias points (IC = 8–15 mA, VCE = 1.8 V) and exhibits monotonic degradation in NFmin and Gms beyond 2.4 GHz - validated per JEDEC JESD22-A114 (HBM) and JESD47 reliability standards for industrial environments.

Key Specifications

Pinout & Package

Package: TSLP-3-10 (1.1 mm × 0.7 mm × 0.37 mm, 0.4 mm lead pitch), thermally optimized for RF PCB mounting with exposed emitter pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFP740FESD and MMA040407-12, the BFR843EL3E6327XTSA1 uniquely balances dual-band noise performance, 5.5 GHz capability, and 1 kV ESD robustness in a 1.1 mm × 0.7 mm footprint - making it optimal for space-constrained, multi-standard RF receivers requiring no external matching.

Availability

BFR843EL3E6327XTSA1 is available at Aetrix Electronics and suitable for WLAN access points, GNSS navigation modules, satellite C-band LNBs, and WiMAX base stations requiring stable component supply across extended product lifecycles.

Supply support for BFR843EL3E6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and R&D infrastructure.

The BFR843EL3 belongs to Infineon's BFR family of high-frequency bipolar transistors, engineered specifically for low-noise, broadband RF amplification in consumer and industrial wireless infrastructure where size, power efficiency, and reliability are critical.

FAQ

What is the recommended bias configuration for optimal noise figure at 5.5 GHz?

For minimum noise figure at 5.5 GHz, operate at VCE = 1.8 V, IC = 8 mA, with base bias set via a 100 kΩ resistor to VBB ≈ 0.95 V and emitter grounded. The datasheet specifies NFmin = 1.15 dB under these exact conditions, and deviation increases NF by ≥0.15 dB per 1 mA IC shift.

Can BFR843EL3E6327XTSA1 be used with 1.2 V supply without derating?

Yes - the device is fully characterized at 1.2 V supply (VCE = 1.2 V), delivering NFmin = 1.2 dB and Gms = 22.5 dB at 2.4 GHz (IC = 8 mA). No derating is required, though OIP3 drops to 19.5 dBm; full 20.5 dBm OIP3 is only guaranteed at ≥1.8 V.

Is external matching required for 50 Ω system integration?

No - the BFR843EL3E6327XTSA1 integrates pre-matching elements optimized for 50 Ω source and load impedances across 450 MHz–5.5 GHz. S-parameter files (S2P) provided by Infineon confirm <−15 dB input/output return loss without external components in standard microstrip layouts.

How does thermal resistance affect maximum RF input power handling?

RthJS = 375 K/W limits continuous RF input power to 20 dBm (100 mW) only when TS ≤ 103 °C. At ambient 85 °C with standard FR4 PCB, junction temperature reaches 125 °C at 15 dBm input - thus pulsed or duty-cycled operation is recommended above 15 dBm to maintain TJ < 150 °C.