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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

NXP Semiconductors BFR92A,235

Name: BFR92A,235
Brand: NXP Semiconductors
SKU: BFR92A,235
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR92A,235

Manufacturer:: NXP Semiconductors

Category:: Bipolar RF Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BFR92A,235.pdf

Description:: RF TRANS NPN 15V 5GHZ TO236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFR92A,235 from NXP Semiconductors is an NPN silicon RF transistor in SOT23 package, designed for wideband amplification up to 5 GHz. It delivers 14 dB maximum unilateral power gain at 1 GHz, 2.1 dB noise figure at 1 GHz (IC = 5 mA, VCE = 10 V), and supports 25 mA DC collector current - enabling use in MATV broadband amplifier stages and low-noise front-end receivers.

For engineers reviewing the BFR92A,235 datasheet, BFR92A,235 pinout, BFR92A,235 application, or BFR92A,235 equivalent, key selection criteria include its 0.35 pF feedback capacitance, 5 GHz transition frequency, SOT23 thermal resistance of 260 K/W, and verified performance in 75 Ω MATV test circuits per DIN 45004B.

Technical Context

The BFR92A,235 operates as a common-emitter RF amplifier with optimized high-frequency S-parameters: S21 = ~10–12 dB at 1 GHz (IC = 14 mA, VCE = 10 V), S11 < −10 dB up to 1 GHz, and S12 < −25 dB - confirming low reverse isolation critical for oscillator stability. Its fT of 5 GHz and GUM of 14 dB at 1 GHz reflect intrinsic gain-bandwidth capability suited for UHF to low-microwave bands.

Thermal design relies on junction-to-solder-point thermal resistance (Rth j-s = 260 K/W) with derating starting above Ts = 95 °C, and absolute maximum ratings include VCEO = 15 V, VCBO = 20 V, and Ptot = 300 mW at Ts ≤ 95 °C - defining safe operating area for continuous-wave and pulsed RF operation.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	5 GHz - defines usable small-signal amplification bandwidth limit under standard bias (IC = 15 mA, VCE = 10 V)
GUM	14 dB at 1 GHz - maximum unilateral power gain achievable with matched source impedance, critical for low-loss RF stage design
F	2.1 dB at 1 GHz - minimum noise figure at optimal source reflection coefficient, enabling sensitive receiver front-ends
Cre	0.35 pF - feedback capacitance limiting Miller effect and ensuring unconditional stability in broadband configurations
VCEO	15 V - maximum collector-emitter voltage defining safe DC bias headroom for 12 V supply systems
Ptot	300 mW at Ts ≤ 95 °C - total dissipation limit dictating heatsinking requirements and duty-cycle constraints in CW operation
h_FE	65–135 - DC current gain range supporting stable bias network design across process variation

Pinout & Package

Package: Plastic surface-mounted SOT23 (3-lead), dimensions per JEDEC TO-236AB: D = 2.8 mm, E = 1.4 mm, Lp = 1.2 mm, bp = 0.48 mm, c = 0.38 mm. Marking code: P2%.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control electrode for forward-biased junction; requires stable DC bias network (e.g., resistive divider) and RF bypassing
2	Emiter	Common reference node in common-emitter configuration; connected to RF ground via low-inductance path
3	Collector	RF output node and primary heat path; soldered directly to PCB copper for thermal management (Rth j-s = 260 K/W)

Key Features

Feature	Design Value
High power gain	14 dB GUM at 1 GHz enables single-transistor gain stages in 75 Ω CATV/MATV distribution amplifiers
Low noise figure	2.1 dB F_min at 1 GHz allows integration into low-noise preamplifier modules without cascaded degradation
Low intermodulation distortion	−50 dB d2 and −65 dB dim in MATV test circuit support multi-channel signal handling with minimal crosstalk
Wideband frequency response	5 GHz f_T and flat GUM response up to 2 GHz permit operation across UHF (470–862 MHz) and L-band (1–2 GHz)
SOT23 thermal performance	Rth j-s = 260 K/W enables 300 mW dissipation with minimal PCB copper area, reducing board space vs. larger packages

Applications

CATV Distribution Amplifier	MATV Front-End Receiver
Use Scenario: Amplifying 75 Ω coaxial signals across 54–862 MHz band in apartment building distribution systems. IC Role / Device Role / Timing Role: Common-emitter RF gain block with 50–75 Ω input/output matching networks. Use Value: 14 dB GUM and −65 dB intermodulation distortion ensure multi-channel signal integrity without adjacent-channel interference.	Use Scenario: First-stage low-noise amplification in multi-tuner terrestrial TV receivers before channel filtering. IC Role / Device Role / Timing Role: Low-noise preamplifier with Γ_s = Γ_opt source matching for minimum noise figure. Use Value: 2.1 dB noise figure at 1 GHz preserves SNR in weak-signal reception, meeting DIN 45004B MATV standards.
UHF Wireless Microphone Transmitter	ISM Band Oscillator Core
Use Scenario: Final RF driver stage in 863–870 MHz European wireless microphone transmitters. IC Role / Device Role / Timing Role: Class-A linear amplifier biased at IC = 14 mA, VCE = 10 V for harmonic suppression. Use Value: 0.35 pF Cre and 5 GHz f_T enable stable fundamental oscillation and low spurious output below −45 dBc.	Use Scenario: Colpitts or Clapp oscillator active device in 902–928 MHz ISM band sensor nodes. IC Role / Device Role / Timing Role: High-gain, low-phase-noise active element with emitter degeneration for amplitude stability. Use Value: Unconditional stability up to 2 GHz (S12 < −25 dB) prevents frequency pulling and ensures reliable start-up.

CATV Distribution Amplifier

MATV Front-End Receiver

Use Scenario: Amplifying 75 Ω coaxial signals across 54–862 MHz band in apartment building distribution systems.

IC Role / Device Role / Timing Role: Common-emitter RF gain block with 50–75 Ω input/output matching networks.

Use Value: 14 dB GUM and −65 dB intermodulation distortion ensure multi-channel signal integrity without adjacent-channel interference.

Use Scenario: First-stage low-noise amplification in multi-tuner terrestrial TV receivers before channel filtering.

IC Role / Device Role / Timing Role: Low-noise preamplifier with Γ_s = Γ_opt source matching for minimum noise figure.

Use Value: 2.1 dB noise figure at 1 GHz preserves SNR in weak-signal reception, meeting DIN 45004B MATV standards.

UHF Wireless Microphone Transmitter

ISM Band Oscillator Core

Use Scenario: Final RF driver stage in 863–870 MHz European wireless microphone transmitters.

IC Role / Device Role / Timing Role: Class-A linear amplifier biased at IC = 14 mA, VCE = 10 V for harmonic suppression.

Use Value: 0.35 pF Cre and 5 GHz f_T enable stable fundamental oscillation and low spurious output below −45 dBc.

Use Scenario: Colpitts or Clapp oscillator active device in 902–928 MHz ISM band sensor nodes.

IC Role / Device Role / Timing Role: High-gain, low-phase-noise active element with emitter degeneration for amplitude stability.

Use Value: Unconditional stability up to 2 GHz (S12 < −25 dB) prevents frequency pulling and ensures reliable start-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFR93A,215	Higher f_T (6 GHz), lower F (1.9 dB at 1 GHz), same SOT23 package and pinout	Better noise performance and bandwidth margin for 2 GHz LTE front-ends	Select BFR93A,215 when >5 GHz bandwidth or sub-2 dB noise figure is required; otherwise BFR92A,235 offers cost-optimized UHF performance.
MRF901LT1G	Different package (SOT-23), higher Ptot (400 mW), f_T = 4.5 GHz, F = 2.5 dB at 1 GHz	Higher power handling for 12 V transmitter drivers, but reduced noise sensitivity	Choose MRF901LT1G for higher-output UHF amplifiers where thermal margin outweighs noise penalty; BFR92A,235 remains preferred for low-noise receive paths.

Compared with BFR93A,215 and MRF901LT1G, the BFR92A,235 provides the best balance of noise figure, gain, and thermal efficiency in standard SOT23 footprint for UHF CATV and MATV applications - delivering verified 2.1 dB F and 14 dB GUM without requiring layout changes.

Availability

BFR92A,235 is available at Aetrix Electronics and suitable for CATV distribution amplifiers, MATV front-end receivers, UHF wireless microphone transmitters, and ISM band oscillator designs requiring stable component supply and long-term obsolescence management.

Supply support for BFR92A,235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

The BFR92A,235 belongs to NXP's legacy RF bipolar transistor product line, engineered specifically for high-linearity, low-noise UHF amplification in broadcast and wireless infrastructure applications.

FAQ

What is the maximum operating frequency of the BFR92A,235?

The BFR92A,235 has a transition frequency (f_T) of 5 GHz under standard conditions (IC = 15 mA, VCE = 10 V, f = 500 MHz), making it suitable for amplification and oscillation up to low microwave frequencies. Its maximum unilateral power gain remains usable up to 2 GHz, with measured S21 > 8 dB at that point - confirming practical operation in UHF and L-band systems.

Does the BFR92A,235 require external bias stabilization?

Yes, the BFR92A,235 requires stable DC biasing using emitter degeneration or base bias networks to maintain consistent h_FE (65–135) and thermal performance. The datasheet recommends IC = 14–15 mA, VCE = 10 V for optimal GUM and noise figure; unregulated bias risks thermal runaway due to its 260 K/W junction-to-solder-point thermal resistance.

Is the BFR92A,235 pin-compatible with the PNP complement BFT92?

No, the BFT92 is a PNP transistor with reversed pinout: Pin 1 = emitter, Pin 2 = base, Pin 3 = collector - opposite to the BFR92A,235's NPN configuration (Pin 1 = base, Pin 2 = emitter, Pin 3 = collector). Direct substitution would invert polarity and cause circuit failure; complementary designs require intentional layout adaptation.

What is the thermal derating behavior of the BFR92A,235 above 95 °C solder point temperature?

The BFR92A,235 must be derated linearly above Ts = 95 °C per Figure 3: total power dissipation drops from 300 mW at Ts = 95 °C to zero at Ts = 175 °C (maximum junction temperature). For example, at Ts = 120 °C, allowable Ptot = 300 × (175 − 120) / (175 − 95) = 206 mW - requiring careful thermal pad design and airflow assessment in enclosed enclosures.

Can the BFR92A,235 be used in 50 Ω RF systems despite being characterized in 75 Ω MATV test circuits?

Yes, the BFR92A,235's S-parameters (S11, S22, S21) are measured in 50 Ω systems per Figures 17–20, confirming direct compatibility with standard RF test equipment and 50 Ω PCB layouts. Its 75 Ω MATV validation demonstrates robustness across impedance domains, but matching networks must be redesigned for 50 Ω target VSWR < 2 - typically using microstrip stubs or lumped LC elements.

BFR92A,235 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 15V

Frequency - Transition:: 5GHz

Noise Figure (dB Typ @ f):: 2.1dB ~ 3dB @ 1GHz ~ 2GHz

Gain:: -

Power - Max:: 300mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 65 @ 15mA, 10V

Current - Collector (Ic) (Max):: 25mA

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23 (TO-236AB)

BFR92A,235 FAQ

1.How can I place an order for BFR92A,235 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR92A,235 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR92A,235 reliable?

The price and inventory of BFR92A,235 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR92A,235 is usually 5 days.

3.What payment methods are accepted for BFR92A,235?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR92A,235 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR92A,235?

BFR92A,235 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR92A,235 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR92A,235?

For technical support, including BFR92A,235 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR92A,235 requirements.

6.How does Aetrix verify that BFR92A,235 is sourced from the original manufacturer or authorized distributors?

All BFR92A,235 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR92A,235 meets industry standards.

7.What is the process for return or replacement of BFR92A,235?

All BFR92A,235 units undergo pre-shipment inspection (PSI). If there is an issue with BFR92A,235, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR92A,235 part is unused and in its original packaging.

Return procedure for BFR92A,235:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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