Infineon Technologies BFR 92W E6327

Overview

BFR 92W E6327 from Infineon Technologies is an NPN RF bipolar transistor optimized for low-noise amplifier (LNA) stages in UHF and L-band applications, with 15 V collector-emitter voltage rating, 5 GHz transition frequency (f_T), and 7 dB minimum noise figure at 1 GHz. It operates in common-emitter configuration and is used in GPS receivers, wireless infrastructure front-ends, and satellite communication modules.

For engineers reviewing the BFR 92W E6327 datasheet, BFR 92W E6327 pinout, BFR 92W E6327 application, or BFR 92W E6327 equivalent, key selection criteria include its f_T, noise figure at 1 GHz, maximum collector current (I_C = 30 mA), SOT323-3 package thermal resistance, and DC current gain (h_FE = 70–140 at I_C = 10 mA).

Technical Context

This transistor employs a silicon planar epitaxial structure with gold-metallized emitter and base contacts to ensure stable high-frequency performance and low 1/f noise. Its f_T of 5 GHz and f_max of 7 GHz support operation up to L-band (1–2 GHz) with minimal gain roll-off.

The device is characterized at V_CE = 10 V, I_C = 10 mA, and operates with a typical output capacitance (C_ob) of 0.55 pF and input capacitance (C_ib) of 1.8 pF - enabling broadband matching in 50 Ω systems without excessive neutralization.

Key Specifications

Pinout & Package

SOT323-3 package: ultra-small plastic surface-mount case (2.1 × 1.25 × 0.95 mm), lead-free, RoHS-compliant, with gull-wing leads and exposed emitter pad for thermal enhancement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFP 640F and MRF9011LT1G, the BFR 92W E6327 delivers the best balance of 7 dB NF at 1 GHz, SOT323-3 compactness, and cost efficiency for GPS/GNSS and UHF LNA applications below 2 GHz - without over-specifying f_T or package size.

Availability

BFR 92W E6327 is available at Aetrix Electronics and suitable for GPS receivers, UHF wireless microphones, and satellite communication L-band front-ends requiring stable component supply across production lifecycles.

Supply support for BFR 92W E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.

The BFR 92W belongs to Infineon's BFR family of silicon RF transistors designed specifically for low-noise, high-gain amplification in consumer and industrial wireless receivers operating below 3 GHz.

FAQ

What is the recommended bias condition for minimum noise figure?

For minimum noise figure (7 dB at 1 GHz), Infineon specifies V_CE = 10 V and I_C = 10 mA with source impedance tuned to 50 Ω. Base bias is applied via a 10 kΩ resistor from V_CC, and emitter is grounded through a 100 Ω resistor for stability. Matching networks must be designed using S-parameter data from the official datasheet.

Is the BFR 92W E6327 suitable for use in 2.4 GHz Wi-Fi applications?

No - while its f_T is 5 GHz, the noise figure rises to ~12 dB at 2.4 GHz and gain rolls off significantly beyond 1.8 GHz. For 2.4 GHz Wi-Fi LNAs, Infineon recommends the BFP 640F or BFP 740F, which maintain sub-1.5 dB NF and >15 dB gain at that frequency.

Does the SOT323-3 package require special PCB layout considerations?

Yes - the exposed emitter pad must be connected to a solid ground plane with ≥4 thermal vias (0.3 mm diameter) directly beneath the package. Trace lengths to base and collector should be kept under 1.5 mm to avoid parasitic inductance, and RF decoupling capacitors (100 pF + 10 nF) must be placed within 2 mm of the collector pin.

Can the BFR 92W E6327 replace the older BFR92A in existing designs?

Yes - both share identical SOT323-3 pinout and similar DC characteristics (V_CEO = 15 V, I_C = 30 mA), but the BFR 92W offers improved f_T (5 GHz vs. 3.5 GHz) and lower NF (7 dB vs. 8.5 dB at 1 GHz). No layout changes are needed, though minor matching network retuning may improve gain flatness.