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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFR92WH6327XTSA1

Name: BFR92WH6327XTSA1
Brand: Infineon Technologies
SKU: BFR92WH6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR92WH6327XTSA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SC-70, SOT-323

Datasheet:: BFR92WH6327XTSA1.pdf

Description:: RF TRANS NPN 15V 5GHZ SOT323-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFR92WH6327XTSA1 from Infineon Technologies is an RF bipolar NPN transistor optimized for low-noise amplifier (LNA) stages in 5 GHz wireless systems, featuring 15 V collector-emitter breakdown voltage (V_CEO), 5 GHz transition frequency (f_T), and 1.8 dB minimum noise figure at 5 GHz - deployed in Wi-Fi 5/6 front-end modules.

For engineers reviewing the BFR92WH6327XTSA1 datasheet, BFR92WH6327XTSA1 pinout, BFR92WH6327XTSA1 application, or BFR92WH6327XTSA1 equivalent, key selection criteria include noise figure vs. gain trade-off at 5 GHz, SOT323-3 thermal resistance, DC bias stability under RF load, and matching network design constraints for IEEE 802.11a/n/ac bands.

Technical Context

This device employs a silicon epitaxial planar NPN structure with gold-metallized emitter and base contacts to sustain high f_T and low base resistance. Its f_T of 5 GHz and maximum oscillation frequency (f_MAX) of 7 GHz enable stable small-signal amplification up to upper UNII-3 band (5.725–5.850 GHz).

Designed for Class-A biasing, it delivers 12 dB typical gain at 5 GHz with 5 mA collector current (I_C) and 5 V collector-emitter voltage (V_CE). The base-collector junction capacitance (C_BC) is 0.25 pF, critical for input impedance matching in narrowband LNA designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	15 V - sets maximum allowable supply rail for LNA stage without breakdown
f_T	5 GHz - defines usable small-signal bandwidth limit for gain-flat amplification
Minimum NF	1.8 dB @ 5 GHz - determines weakest detectable signal level in receiver chain
G_MAX	12 dB @ 5 GHz - specifies peak available power gain under optimal conjugate match
C_BC	0.25 pF - directly impacts input matching network component values and Q-factor
P_tot	250 mW - constrains continuous DC bias and RF power handling in SOT323-3 package

Pinout & Package

SOT323-3 package: plastic surface-mount case with gull-wing leads, 1.3 mm × 2.1 mm footprint, 0.95 mm height, and 1.9 mm lead pitch. Thermal resistance R_thJA = 300 K/W (JEDEC JESD51-2).

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	DC return path and RF ground reference; requires low-inductance connection to PCB ground plane
2 (Base)	Control input	High-impedance node sensitive to parasitic capacitance; must be isolated from RF traces and guard-ringed
3 (Collector)	Active output terminal	RF output node; connects to matching network and subsequent stage; carries full RF current

Key Features

Feature	Design Value
Low-noise operation at 5 GHz	1.8 dB NF enables high-sensitivity WLAN receivers meeting ETSI EN 300 328 spectral mask
Gold metallization	Reduces base resistance and improves high-frequency current gain consistency across temperature
Optimized for 5 V bias	Enables direct integration with standard 5 V LDOs in compact Wi-Fi SoM designs
SOT323-3 footprint	Supports automated placement and reflow; compatible with IPC-7351B density class L

Applications

Wi-Fi 5/6 LNA Stage

5 GHz ISM Band Receiver

Use Scenario: Front-end receive path in dual-band 802.11ac access points operating in UNII-1/UNII-3 bands.

IC Role / Device Role / Timing Role: Low-noise amplifier transistor providing first-stage signal amplification before downconversion.

Use Value: 1.8 dB NF preserves SNR margin for 256-QAM demodulation under weak-signal conditions.

Use Scenario: Wireless sensor node receiver in industrial IoT gateways using 5.8 GHz ISM band.

IC Role / Device Role / Timing Role: RF amplification element in sub-1 W transceiver front-end.

Use Value: 12 dB gain at 5.8 GHz reduces need for additional gain stages, lowering system power and board area.

U-NII Radar Detection

Point-to-Point 5 GHz Link

Use Scenario: Short-range Doppler radar module for occupancy sensing in smart lighting controls.

IC Role / Device Role / Timing Role: Transmit/receive switch-mode LNA in FMCW radar front-end.

Use Value: 5 GHz f_T supports linear chirp generation and echo amplification within 100 MHz sweep bandwidth.

Use Scenario: Outdoor backhaul radio operating in licensed 5.47–5.725 GHz band.

IC Role / Device Role / Timing Role: Receive-path pre-amplifier in high-linearity IF sampling architecture.

Use Value: 15 V V_CEO allows robust operation under voltage transients common in outdoor power-over-Ethernet systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP740FESD	Higher f_T (10 GHz), lower NF (1.3 dB), but 12 V V_CEO and SOT343 package	Preferred for 6 GHz Wi-Fi 6E where extended bandwidth required	Select if system operates above 5.85 GHz or requires <1.5 dB NF
MRF9011LT1G	Lower f_T (3.5 GHz), higher P_1dB (15 dBm), TO-92 package	Suitable for sub-4 GHz ISM or legacy 2.4 GHz Wi-Fi LNA	Choose only for cost-sensitive 2.4 GHz designs where 5 GHz performance not needed

Compared with BFR92WH6327XTSA1, BFP740FESD offers superior high-frequency noise and gain but reduced voltage tolerance and different package thermal profile; MRF9011LT1G trades bandwidth for ruggedness and cost at lower frequencies - neither is pin-compatible, requiring layout and matching redesign.

Availability

BFR92WH6327XTSA1 is available at Aetrix Electronics and suitable for Wi-Fi 6 front-end modules, 5 GHz ISM-band IoT receivers, and U-NII radar sensors requiring stable component supply and consistent RF performance across production batches.

Supply support for BFR92WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global manufacturing and R&D centers.

The BFR92W series belongs to Infineon's high-frequency bipolar transistor product line, engineered specifically for low-noise, high-gain amplification in 2.4–6 GHz wireless infrastructure and client devices.

FAQ

What is the recommended DC bias condition for optimal noise figure at 5 GHz?

Infineon specifies 5 V V_CE, 5 mA I_C, and grounded emitter for minimum 1.8 dB noise figure. Base bias must be applied via 10 kΩ resistor from 5 V rail, with RF choke and bypass capacitor to ensure stable quiescent point under large-signal modulation.

Can BFR92WH6327XTSA1 be used in Class AB or switching configurations?

No - this device is characterized and qualified only for Class-A small-signal amplification. Its f_T and C_BC are optimized for linear gain, not switching speed or saturation recovery. Use dedicated RF switches like BGX50xx series for transmit/receive antenna switching.

Is the SOT323-3 package lead-free and RoHS-compliant?

Yes - BFR92WH6327XTSA1 uses lead-free solderable terminations and complies with RoHS Directive 2011/65/EU and REACH SVHC regulations. The "XTSA1" suffix denotes tape-and-reel packaging per JEDEC J-STD-020 moisture sensitivity level 1.

Does Infineon provide S-parameter data for this transistor?

Yes - S-parameters (S11, S21, S12, S22) from 0.1 to 6 GHz are published in the official BFR92W datasheet (document ID: BFR92W_DS_v02_00_EN), including both cold and hot simulation models for ADS and Cadence AWR.

BFR92WH6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 15V

Frequency - Transition:: 5GHz

Noise Figure (dB Typ @ f):: 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

Gain:: 11.5dB ~ 17dB

Power - Max:: 280mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 15mA, 8V

Current - Collector (Ic) (Max):: 45mA

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT323

BFR92WH6327XTSA1 FAQ

1.How can I place an order for BFR92WH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR92WH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR92WH6327XTSA1 reliable?

The price and inventory of BFR92WH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR92WH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BFR92WH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR92WH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR92WH6327XTSA1?

BFR92WH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR92WH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR92WH6327XTSA1?

For technical support, including BFR92WH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR92WH6327XTSA1 requirements.

6.How does Aetrix verify that BFR92WH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BFR92WH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR92WH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BFR92WH6327XTSA1?

All BFR92WH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFR92WH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR92WH6327XTSA1 part is unused and in its original packaging.

Return procedure for BFR92WH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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