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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

NXP Semiconductors BFR93AW,135

Name: BFR93AW,135
Brand: NXP Semiconductors
SKU: BFR93AW,135
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR93AW,135

Manufacturer:: NXP Semiconductors

Category:: Bipolar RF Transistors

Package:: SC-70, SOT-323

Datasheet:: BFR93AW,135.pdf

Description:: RF TRANS NPN 12V 5GHZ SOT323-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,132

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Product details

Overview

BFR93AW,135 from NXP Semiconductors is a silicon NPN RF transistor in SOT323 (S-mini) package, designed for high-frequency amplification up to 1 GHz with 5 GHz transition frequency (f_T), 13 dB maximum unilateral power gain at 1 GHz, and 1.5 dB noise figure at 1 GHz under optimal source impedance.

For engineers reviewing the BFR93AW,135 datasheet, BFR93AW,135 pinout, BFR93AW,135 application, or BFR93AW,135 equivalent, this device serves as a wideband RF amplifier stage in low-noise receiver front-ends, mixer driver circuits, and local oscillator buffers where compact size, gold-metallized reliability, and stable gain above 500 MHz are required.

Technical Context

The BFR93AW,135 employs a high-frequency silicon epitaxial planar structure optimized for broadband small-signal amplification. Its f_T of 4–5 GHz and G_UM of 13 dB at 1 GHz confirm suitability for VHF/UHF amplifier design, while its 0.6 pF feedback capacitance (C_re) and 0.7 pF collector capacitance (C_c) support stable operation with minimal Miller effect.

Thermal performance is defined by R_{th j-s} = 190 K/W to the collector soldering point, enabling reliable 300 mW total power dissipation up to T_s = 93 °C. The device operates with V_CEO = 12 V and I_C = 35 mA DC, supporting Class-A biasing in low-power RF stages.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	4–5 GHz - enables stable small-signal amplification up to UHF band without gain collapse
G_UM @ 1 GHz	13 dB - provides usable power gain in 1 GHz RF amplifier stages with matched 50 Ω input/output
F @ 1 GHz	1.5 dB - supports low-noise front-end design in receiver applications requiring <2 dB NF
C_re	0.6 pF - minimizes reverse transmission and improves stability in common-emitter configurations
V_CEO	12 V - allows operation with standard 5–9 V RF supply rails and sufficient headroom for signal swing
I_C (max)	35 mA - sets practical DC bias limit for thermal management in SOT323 package
P_tot	300 mW - defines absolute power handling ceiling before thermal derating begins at T_s > 93 °C

Pinout & Package

SOT323 (S-mini) plastic surface-mounted package - 3-lead, 1.35 mm × 1.8 mm footprint, 0.95 mm height, gold-metallized terminals for enhanced reliability and wire-bond compatibility.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control electrode for current amplification; requires DC bias network and AC coupling for RF drive
2	Emiter	Common reference node in common-emitter configuration; connected to RF ground via low-inductance path
3	Collector	Output node with highest thermal stress; soldered directly to PCB copper for thermal conduction (R_{th j-s} = 190 K/W)

Key Features

Feature	Design Value
High-frequency silicon epitaxial process	Delivers 5 GHz f_T and stable gain up to 2 GHz, enabling use in 433 MHz ISM, 868 MHz SRD, and 915 MHz bands
Gold metallization	Ensures long-term bond-wire reliability and resistance to corrosion in humid or thermally cycled environments
Low feedback capacitance (C_re)	0.6 pF reduces internal feedback, allowing unconditional stability in common-emitter amplifier designs without neutralization
Optimized noise performance	1.5 dB NF at 1 GHz with Γ_s = Γ_opt enables direct integration into LNA stages without external matching for minimum noise
SOT323 package	Enables high-density RF layout with minimal parasitic inductance; compatible with standard reflow soldering profiles

Applications

UHF Receiver Front-End	ISM Band Mixer Driver
Use Scenario: First-stage low-noise amplification in 868/915 MHz wireless sensor receivers. IC Role / Device Role / Timing Role: NPN RF transistor configured as common-emitter LNA with 50 Ω input match and Γ_s = Γ_opt. Use Value: Achieves 1.5 dB noise figure and 13 dB gain at 915 MHz, improving system sensitivity by ≥3 dB over higher-NF alternatives.	Use Scenario: Local oscillator buffer driving passive double-balanced mixer in 433 MHz telemetry transceivers. IC Role / Device Role / Timing Role: Small-signal RF amplifier providing clean, amplified LO signal to mixer port with minimal phase noise degradation. Use Value: Delivers 13 dB gain at 433 MHz with 0.6 pF C_re, reducing LO feedthrough and improving mixer port-to-port isolation.
VHF/UHF Oscillator Core	RF Test Equipment Amplifier Stage
Use Scenario: Active device in Colpitts or Clapp oscillator for tunable 100–500 MHz signal generation. IC Role / Device Role / Timing Role: High-gain NPN transistor sustaining oscillation with low phase noise due to high f_T and low C_re. Use Value: Enables stable oscillation with <−100 dBc/Hz phase noise at 10 kHz offset, supported by 5 GHz f_T margin.	Use Scenario: Gain block in handheld RF field strength meters operating from 30–1000 MHz. IC Role / Device Role / Timing Role: Broadband amplifier stage with flat gain response across VHF/UHF spectrum. Use Value: Maintains ≥10 dB gain from 30 MHz to 1 GHz (per Fig.8–Fig.9), simplifying calibration and extending dynamic range.

UHF Receiver Front-End

ISM Band Mixer Driver

Use Scenario: First-stage low-noise amplification in 868/915 MHz wireless sensor receivers.

IC Role / Device Role / Timing Role: NPN RF transistor configured as common-emitter LNA with 50 Ω input match and Γ_s = Γ_opt.

Use Value: Achieves 1.5 dB noise figure and 13 dB gain at 915 MHz, improving system sensitivity by ≥3 dB over higher-NF alternatives.

Use Scenario: Local oscillator buffer driving passive double-balanced mixer in 433 MHz telemetry transceivers.

IC Role / Device Role / Timing Role: Small-signal RF amplifier providing clean, amplified LO signal to mixer port with minimal phase noise degradation.

Use Value: Delivers 13 dB gain at 433 MHz with 0.6 pF C_re, reducing LO feedthrough and improving mixer port-to-port isolation.

VHF/UHF Oscillator Core

RF Test Equipment Amplifier Stage

Use Scenario: Active device in Colpitts or Clapp oscillator for tunable 100–500 MHz signal generation.

IC Role / Device Role / Timing Role: High-gain NPN transistor sustaining oscillation with low phase noise due to high f_T and low C_re.

Use Value: Enables stable oscillation with <−100 dBc/Hz phase noise at 10 kHz offset, supported by 5 GHz f_T margin.

Use Scenario: Gain block in handheld RF field strength meters operating from 30–1000 MHz.

IC Role / Device Role / Timing Role: Broadband amplifier stage with flat gain response across VHF/UHF spectrum.

Use Value: Maintains ≥10 dB gain from 30 MHz to 1 GHz (per Fig.8–Fig.9), simplifying calibration and extending dynamic range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFR92A,115	Same SOT23 package; f_T = 4–5 GHz but G_UM = 11 dB at 1 GHz and F = 1.8 dB - lower gain and higher noise than BFR93AW,135	Less suitable for noise-critical LNA stages; acceptable for non-critical driver or oscillator roles	Select when SOT23 footprint is mandatory and 2 dB NF penalty is acceptable
MRF901,115	SOT323 package; f_T = 3.5 GHz, G_UM = 12 dB at 900 MHz, F = 2.0 dB - slightly lower bandwidth and higher noise	Marginally adequate for 868 MHz receivers but not recommended for 1 GHz+ applications	Choose only if BFR93AW,135 is unavailable and operation below 900 MHz is confirmed

Compared with BFR92A,115 and MRF901,115, the BFR93AW,135 delivers superior 1.5 dB noise figure and 13 dB gain at 1 GHz in the same SOT323 footprint - making it the preferred choice for high-sensitivity, wideband RF amplifier designs where noise and gain margins are critical.

Availability

BFR93AW,135 is available at Aetrix Electronics and suitable for UHF wireless sensor networks, ISM-band transceivers, and RF test instrumentation requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for BFR93AW,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company specializing in high-performance RF, analog, and mixed-signal solutions for automotive, industrial, and consumer applications.

The BFR93AW,135 belongs to NXP's legacy RF transistor product line targeting discrete wideband amplifier design in VHF/UHF systems - developed specifically for cost-sensitive, high-volume wireless infrastructure and instrumentation where reliability and RF consistency are essential.

FAQ

What is the maximum operating frequency for stable amplification using the BFR93AW,135?

The BFR93AW,135 achieves usable power gain up to 2 GHz, with 8 dB maximum unilateral gain at 2 GHz per datasheet specifications. However, for stable, high-gain amplification with minimal risk of oscillation, design guidance limits practical use to 1 GHz - where G_UM remains at 13 dB and noise figure stays at 1.5 dB. Operation beyond 1 GHz requires careful stability analysis and layout optimization.

Does the BFR93AW,135 require external neutralization for stability in common-emitter amplifier configurations?

No, the BFR93AW,135 does not require external neutralization in typical common-emitter amplifier designs due to its low 0.6 pF feedback capacitance (C_re). Datasheet Figures 15–18 confirm unconditional stability across 40 MHz–3 GHz when properly biased and matched, provided layout parasitics are minimized and grounding is robust.

What is the thermal resistance junction-to-soldering point (R_{th j-s}) for the BFR93AW,135, and how does it affect PCB layout?

The BFR93AW,135 has R_{th j-s} = 190 K/W, measured to the collector pin's soldering point. This requires direct thermal connection of Pin 3 (collector) to a dedicated copper pour or thermal pad on the PCB - at least 25 mm² - to maintain junction temperature ≤150 °C under 300 mW dissipation. Inadequate copper area causes premature thermal derating.

Can the BFR93AW,135 be used in Class-C oscillator applications, and what is its recommended DC bias?

Yes, the BFR93AW,135 is commonly used in Class-C Colpitts oscillators for VHF/UHF signal generation. Recommended DC bias is V_CE = 8 V and I_C = 10–30 mA, aligning with datasheet conditions for G_UM and f_T characterization. Bias networks must minimize base-emitter impedance to preserve high-frequency response and avoid gain reduction.

Is the BFR93AW,135 automotive-qualified, and what is its qualification status per NXP documentation?

No, the BFR93AW,135 is explicitly designated as a non-automotive qualified product per NXP's disclaimers. It is not tested or certified to AEC-Q101 or any automotive reliability standard. Its datasheet states "Non-automotive qualified products" and prohibits use in safety-critical or life-support systems - including automotive ECUs, ADAS sensors, or powertrain control modules.

BFR93AW,135 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 12V

Frequency - Transition:: 5GHz

Noise Figure (dB Typ @ f):: 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz

Gain:: -

Power - Max:: 300mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 30mA, 5V

Current - Collector (Ic) (Max):: 35mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70

BFR93AW,135 FAQ

1.How can I place an order for BFR93AW,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR93AW,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR93AW,135 reliable?

The price and inventory of BFR93AW,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR93AW,135 is usually 5 days.

3.What payment methods are accepted for BFR93AW,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR93AW,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR93AW,135?

BFR93AW,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR93AW,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR93AW,135?

For technical support, including BFR93AW,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR93AW,135 requirements.

6.How does Aetrix verify that BFR93AW,135 is sourced from the original manufacturer or authorized distributors?

All BFR93AW,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR93AW,135 meets industry standards.

7.What is the process for return or replacement of BFR93AW,135?

All BFR93AW,135 units undergo pre-shipment inspection (PSI). If there is an issue with BFR93AW,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR93AW,135 part is unused and in its original packaging.

Return procedure for BFR93AW,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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