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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFR949L3E6327

Name: BFR949L3E6327
Brand: Infineon Technologies
SKU: BFR949L3E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR949L3E6327

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SC-101, SOT-883

Datasheet:: BFR949L3E6327.pdf

Description:: RF BIPOLAR TRANSISTOR

Quantity:: RFQ Add To RFQ list

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Inventory:13,990

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Product details

Overview

BFR949L3E6327 from Infineon Technologies is an NPN silicon RF transistor optimized for low-noise, high-gain broadband amplification at collector currents from 1 mA to 20 mA; features f_T = 9 GHz (typ), noise figure F = 1 dB at 1 GHz, V_CEO = 10 V, and is housed in a RoHS-compliant TSLP-3-1 package - used in 1–2 GHz front-end LNA stages of automotive radar receivers and wireless infrastructure transceivers.

For engineers reviewing the BFR949L3E6327 datasheet, BFR949L3E6327 pinout, BFR949L3E6327 application, or BFR949L3E6327 equivalent, key selection criteria include verified 1 dB noise figure at 1 GHz, 9 GHz transition frequency, 10 V V_CEO, 250 mW P_tot, and TSLP-3-1 thermal resistance ≤195 K/W - critical for compact RF amplifier design under thermal constraints.

Technical Context

This device operates as a single-stage NPN RF amplifier with emitter-grounded configuration and base bias control; its small-signal S-parameter behavior supports stable gain up to 1.8 GHz (|S21| ≥12 dB) and delivers maximum available power gain G_ma = 15.5 dB at that frequency under matched 50 Ω conditions.

Designed for DC-biased common-emitter topology, it exhibits h_FE = 100–180 at I_C = 5 mA/V_CE = 6 V, C_cb = 0.25 pF (typ), and C_eb = 0.7 pF (typ), enabling wideband impedance matching without external neutralization in sub-2 GHz applications.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	9 GHz typical - enables stable small-signal amplification up to L-band (1–2 GHz) with margin for layout parasitics
Noise Figure (F)	1 dB at 1 GHz - meets stringent LNA requirements for automotive radar and LTE receiver front-ends
V_CEO	10 V - sets maximum allowable supply rail for single-supply 5–8 V RF amplifier designs
P_tot	250 mW at T_S ≤ 101 °C - defines thermal derating limit for continuous-wave operation on standard FR4 PCBs
C_cb	0.25 pF typical - minimizes Miller effect, supporting >1 GHz bandwidth without stability compensation
h_FE	140 typical at I_C = 5 mA - ensures predictable DC bias point setting and gain consistency across production lots
R_thJS	≤195 K/W - allows direct thermal modeling from junction to solder point for thermal-aware RF layout

Pinout & Package

Package: TSLP-3-1 - ultra-thin, leadless surface-mount package (1.16 mm × 0.76 mm × 0.4 mm), optimized for high-frequency performance and automated placement.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	DC bias input and RF signal injection node; requires stable low-impedance path to ground via decoupling
2	Emitter (E)	AC ground reference and current return path; connected directly to RF ground plane for minimal inductance
3	Collector (C)	RF output and DC supply node; routed with controlled impedance to match 50 Ω system interface

Key Features

Feature	Design Value
Low-noise amplification	F = 1 dB at 1 GHz - enables detection of weak signals in automotive 77 GHz radar IF stages
High transition frequency	f_T = 9 GHz - supports broadband gain flatness through 1.8 GHz without cascading stages
RoHS-compliant packaging	TSLP-3-1 with Pb-free terminations - satisfies automotive electronics environmental compliance (AEC-Q101 qualified)
Thermal robustness	R_thJS ≤ 195 K/W - permits operation at 150 °C junction temperature with standard PCB copper area
Controlled capacitance profile	C_cb = 0.25 pF, C_eb = 0.7 pF - simplifies input/output matching network design for 50 Ω systems

Applications

Automotive Radar Receiver LNA

Wireless Infrastructure Power Amplifier Driver

Use Scenario: Front-end low-noise amplification in 77 GHz automotive radar modules operating at 1–2 GHz IF frequencies.

IC Role / Device Role / Timing Role: Single-stage NPN RF transistor configured as common-emitter LNA with 5 mA DC bias.

Use Value: 1 dB noise figure and 14 dB transducer gain at 1 GHz enable high dynamic range signal recovery before ADC sampling.

Use Scenario: Driver stage in macrocell BTS power amplifiers requiring broadband gain from 800 MHz to 1.9 GHz.

IC Role / Device Role / Timing Role: High-linearity RF gain block delivering 21.5 dB power gain at 900 MHz with Z_Sopt/Z_Lopt matching.

Use Value: 15.5 dB G_ma at 1.8 GHz reduces need for additional gain stages, lowering system power and board space.

GNSS L-Band Front-End

ISM Band Transceiver IF Amplifier

Use Scenario: Low-noise amplification of GPS/GLONASS L1-band (1.575 GHz) signals in telematics and ADAS modules.

IC Role / Device Role / Timing Role: Matched 50 Ω input/output RF amplifier with 12 dB |S21| at 1.575 GHz and 1.3 dB noise figure.

Use Value: Enables high carrier-to-noise ratio (C/N₀) without degrading time-to-first-fix in cold-start GNSS receivers.

Use Scenario: Intermediate frequency amplification in 2.4 GHz Wi-Fi/Bluetooth coexistence test equipment operating at 1 GHz IF.

IC Role / Device Role / Timing Role: Fixed-gain broadband amplifier with 17 dB |S21| at 1 GHz and 100–180 h_FE process spread control.

Use Value: Stable gain across lot-to-lot variation supports calibrated signal level accuracy in production test fixtures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFR93A	f_T = 5 GHz (typ), F = 1.5 dB at 1 GHz, V_CEO = 15 V, TO-92 package	Higher voltage rating but lower f_T and larger footprint - unsuitable for miniaturized 1.8 GHz designs	Select when higher breakdown voltage is required and board space is unconstrained
BFP640	f_T = 45 GHz (typ), F = 0.8 dB at 2 GHz, SOT-343 package, higher P_tot = 400 mW	Superior high-frequency performance but tighter bias sensitivity and higher cost	Select for E-band or Ka-band driver stages where >10 GHz bandwidth is mandatory

Compared with BFR949L3E6327, BFR93A trades bandwidth for ruggedness and ease of prototyping, while BFP640 offers extended frequency capability at the expense of thermal management complexity and cost - BFR949L3E6327 balances noise, gain, size, and manufacturability for mainstream 1–2 GHz RF front-ends.

Availability

BFR949L3E6327 is available at Aetrix Electronics and suitable for automotive radar receivers, wireless infrastructure transceivers, GNSS front-ends, and ISM-band test equipment requiring stable component supply with AEC-Q101 qualification and RoHS compliance.

Supply support for BFR949L3E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and RF solutions, with global R&D and manufacturing infrastructure.

The BFR949L3E6327 belongs to Infineon's high-frequency bipolar transistor product line, engineered specifically for low-noise, high-gain RF amplification in automotive and wireless communication systems up to 2 GHz.

FAQ

What is the recommended DC bias condition for optimal noise figure at 1 GHz?

For minimum noise figure (F = 1 dB), operate at I_C = 5 mA and V_CE = 6 V with source impedance matched to Z_Sopt (typically ~20 + j10 Ω). Base bias must be stabilized using a resistive divider with bypass capacitor to suppress low-frequency oscillation.

Can BFR949L3E6327 be used in Class A power amplifier configurations?

Yes - it supports Class A operation up to I_C = 20 mA with V_CE = 8 V, delivering >12 dB transducer gain at 1.8 GHz. Thermal derating must be applied: P_tot drops to ~180 mW above 70 °C ambient due to R_thJS limitation.

Is the TSLP-3-1 package compatible with standard reflow profiles for lead-free assembly?

Yes - the TSLP-3-1 package is qualified for IPC/JEDEC J-STD-020D-compliant lead-free reflow, with peak temperature ≤260 °C and time above 217 °C limited to 60–150 seconds. Board layout must follow Infineon's recommended stencil aperture and copper pad dimensions.

How does the device behave under ESD stress, and what handling precautions apply?

BFR949L3E6327 is ESD-sensitive (HBM Class 1B, <250 V); handling requires grounded wrist straps, conductive foam storage, and ionized air workstations. PCB layout must avoid floating base traces and include series gate resistors if driven by digital logic.

BFR949L3E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-101, SOT-883

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 10V

Frequency - Transition:: 9GHz

Noise Figure (dB Typ @ f):: 1dB ~ 2.5dB @ 1GHz

Gain:: 21.5dB

Power - Max:: 250mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 5mA, 6V

Current - Collector (Ic) (Max):: 50mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSLP-3-1

BFR949L3E6327 FAQ

1.How can I place an order for BFR949L3E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR949L3E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR949L3E6327 reliable?

The price and inventory of BFR949L3E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR949L3E6327 is usually 5 days.

3.What payment methods are accepted for BFR949L3E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR949L3E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR949L3E6327?

BFR949L3E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR949L3E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR949L3E6327?

For technical support, including BFR949L3E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR949L3E6327 requirements.

6.How does Aetrix verify that BFR949L3E6327 is sourced from the original manufacturer or authorized distributors?

All BFR949L3E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR949L3E6327 meets industry standards.

7.What is the process for return or replacement of BFR949L3E6327?

All BFR949L3E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BFR949L3E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR949L3E6327 part is unused and in its original packaging.

Return procedure for BFR949L3E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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