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Infineon Technologies BFR 949L3 E6327

Part No.:
BFR 949L3 E6327
Manufacturer:
Infineon Technologies
Category:
Bipolar RF Transistors
Package:
SC-101, SOT-883
Datasheet:
AetrixBFR 949L3 E6327.pdf
Description:
RF TRANS NPN 10V 9GHZ TSLP-3-1
Quantity:
Payment:
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Shipping:
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Inventory:2,210

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Product details

Overview

BFR949L3 E6327 from Infineon Technologies is an NPN silicon RF transistor optimized for low-noise, high-gain broadband amplification at collector currents from 1 mA to 20 mA; features fT = 9 GHz (typ), noise figure F = 1 dB at 1 GHz (typ), and VCEO = 10 V - deployed in GPS L1-band LNAs and cellular front-end modules.

For engineers reviewing the BFR949L3 E6327 datasheet, BFR949L3 E6327 pinout, BFR949L3 E6327 application, or BFR949L3 E6327 equivalent, key selection criteria include noise performance at 1–1.8 GHz, thermal resistance ≤195 K/W, Ccb = 0.25 pF (typ), hFE = 140 (typ), and AEC-Q101 qualification for automotive RF subsystems.

Technical Context

This RF transistor employs a planar epitaxial silicon structure with gold-metallized emitter and base contacts to minimize parasitic inductance and optimize high-frequency gain. Its TSLP-3-1 package enables compact board layout while maintaining thermal performance up to 150 °C junction temperature.

Designed for small-signal amplification, it operates with DC bias conditions of VCE = 6–8 V and IC = 3–15 mA, delivering Gma = 15.5 dB at 1.8 GHz and |S21|² = 17 dB at 1 GHz under matched 50 Ω source/load conditions.

Key Specifications

ParameterValue and Actual Design Meaning
fT9 GHz typical - enables stable amplification up to mid-UHF band without gain roll-off
Noise Figure (F)1 dB at 1 GHz - meets stringent LNA requirements for GPS and LTE receiver sensitivity
hFE140 typical at IC = 5 mA - ensures predictable DC bias stability in cascode and common-emitter stages
Ccb0.25 pF typical - reduces Miller effect, supporting wideband matching up to 2 GHz
RthJS≤195 K/W - allows continuous operation at 50 mW dissipation with PCB copper area ≥25 mm²
VCEO10 V - supports single-supply 5 V or 3.3 V RF amplifier designs with headroom margin
AEC-Q101 QualifiedYes - validated for automotive infotainment and telematics RF modules requiring reliability under thermal cycling

Pinout & Package

Package: TSLP-3-1 - ultra-thin, leadless surface-mount package (1.16 × 0.76 × 0.4 mm) with exposed thermal pad, RoHS-compliant, designed for high-frequency signal integrity and thermal management in space-constrained RF layouts.

Pin/TerminalCircuit RoleDesign Meaning
1Base (B)Control electrode; requires DC bias network with impedance <100 Ω to minimize noise contribution
2Emitter (E)AC ground reference; connected directly to RF ground plane for minimal inductance path
3Collector (C)RF output node; routed over solid ground plane with controlled-impedance microstrip to preserve S-parameters

Key Features

FeatureDesign Value
Low-noise amplificationF = 1 dB at 1 GHz enables >2 dB improvement in receiver NF over legacy Si transistors
High transition frequencyfT = 9 GHz supports stable gain in 800 MHz–2.1 GHz bands without neutralization
AEC-Q101 qualificationValidated for automotive ambient temperatures (−40 °C to +125 °C case) and humidity testing
Thermally enhanced packageTSLP-3-1's exposed collector pad reduces RthJS by 35% vs. standard SOT-323
ESD protectionHBM rating >2 kV (Class 2) - mitigates handling damage during SMT assembly

Applications

GPS L1-Band LNACellular Front-End Amplifier

Use Scenario: Low-noise amplification of 1.575 GHz GPS signals in automotive navigation modules.

IC Role / Device Role / Timing Role: First-stage LNA in cascaded RF chain, operating at IC = 5 mA, VCE = 6 V.

Use Value: Achieves system NF ≤ 1.8 dB with 17 dB transducer gain, meeting RTCA DO-160 radiated emissions constraints.

Use Scenario: Driver amplifier in 3G/4G handset power amplifier modules before GaAs PAs.

IC Role / Device Role / Timing Role: Interstage gain block between TR switch and final PA, biased at IC = 10 mA, VCE = 8 V.

Use Value: Delivers Gms = 21.5 dB at 900 MHz, reducing required gain from subsequent stages and improving linearity headroom.

ISM Band ReceiverAutomotive Telematics RF Module

Use Scenario: Signal amplification in 2.4 GHz Wi-Fi/BLE coexistence receivers for smart home gateways.

IC Role / Device Role / Timing Role: Low-noise preamplifier stage with ZS = ZSopt, operating at IC = 3 mA, VCE = 8 V.

Use Value: Maintains F = 1.3 dB at 1.8 GHz, enabling −95 dBm sensitivity in 20 MHz channel bandwidth.

Use Scenario: RF receive path in V2X (DSRC) modules operating at 5.9 GHz carrier with harmonic filtering.

IC Role / Device Role / Timing Role: High-linearity IF amplifier after downconversion, qualified per AEC-Q101 Grade 1.

Use Value: Supports 10-year field life under thermal shock (−40 °C ↔ +125 °C) and vibration per ISO 16750-3.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BFP740FESDfT = 45 GHz, F = 0.85 dB at 2 GHz, higher VCEO = 12 V, same TSLP-3-1 packageBetter noise and bandwidth for 5G NR sub-6 GHz receivers; higher cost and tighter bias control requiredSelect when targeting <1 dB NF above 2 GHz or requiring >20 dB gain at 3.5 GHz
MMA040407-100fT = 6 GHz, F = 1.2 dB at 1 GHz, SOT-343 package, non-AEC-Q101Larger footprint, lower thermal performance (RthJS ≈ 250 K/W), no automotive qualificationAcceptable for industrial IoT base stations where AEC-Q101 is not mandated

Compared with BFR949L3 E6327, BFP740FESD offers superior high-frequency noise and gain but demands stricter bias stability; MMA040407-100 provides cost-effective replacement in non-automotive designs but lacks thermal and reliability validation for vehicular use.

Availability

BFR949L3 E6327 is available at Aetrix Electronics and suitable for GPS L1-band LNAs, cellular front-end amplifiers, ISM-band receivers, and automotive telematics RF modules requiring stable component supply across production lifecycles.

Supply support for BFR949L3 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and R&D centers.

The BFR949L3 belongs to Infineon's high-frequency bipolar transistor product line, engineered specifically for low-noise, high-gain RF amplification in automotive and wireless infrastructure applications up to 2.1 GHz.

FAQ

What is the maximum recommended collector current for continuous operation?

The absolute maximum collector current is 50 mA, but for reliable long-term operation with thermal margin, Infineon specifies IC ≤ 20 mA at TA ≤ 85 °C. At 20 mA and VCE = 6 V, power dissipation reaches 120 mW - well within the 250 mW Ptot limit at TS ≤ 101 °C, provided adequate PCB copper area is used for heat spreading.

Is the BFR949L3 E6327 suitable for 5G sub-6 GHz applications?

No - its fT = 9 GHz and verified S-parameter data extend only to 2.1 GHz. While |S21|² remains >10 dB up to ~3 GHz, gain compression and noise degradation occur beyond 2.5 GHz. For 3.5 GHz or 4.9 GHz 5G NR bands, Infineon's BFP740FESD or BFP840ESD are specified alternatives with validated performance.

How should the exposed thermal pad be connected on the PCB?

The TSLP-3-1 package has an exposed collector pad that must be soldered directly to a dedicated thermal land on the PCB, connected via ≥4 thermal vias (0.3 mm diameter) to inner-layer ground planes. The land size should match the pad outline (1.16 × 0.76 mm), with solder mask opening equal to metal area to ensure full wetting and minimal RthJA.

Does the AEC-Q101 qualification cover the full temperature range of the device?

Yes - AEC-Q101 qualification was performed across −40 °C to +125 °C case temperature, including temperature cycling (1000 cycles), high-temperature operating life (1000 hrs at 150 °C), and unbiased HAST. The device meets Grade 1 requirements, confirming suitability for under-hood automotive RF modules where ambient can reach 105 °C and junction exceeds 130 °C under bias.

BFR 949L3 E6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-101, SOT-883
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
10V
Frequency - Transition:
9GHz
Noise Figure (dB Typ @ f):
1dB ~ 2.5dB @ 1GHz
Gain:
21.5dB
Power - Max:
250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 5mA, 6V
Current - Collector (Ic) (Max):
50mA
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TSLP-3-1

BFR 949L3 E6327 FAQ

1.How can I place an order for BFR 949L3 E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR 949L3 E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR 949L3 E6327 reliable?

The price and inventory of BFR 949L3 E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR 949L3 E6327 is usually 5 days.

3.What payment methods are accepted for BFR 949L3 E6327?

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4.How is shipping managed for BFR 949L3 E6327?

BFR 949L3 E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR 949L3 E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR 949L3 E6327?

For technical support, including BFR 949L3 E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR 949L3 E6327 requirements.

6.How does Aetrix verify that BFR 949L3 E6327 is sourced from the original manufacturer or authorized distributors?

All BFR 949L3 E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR 949L3 E6327 meets industry standards.

7.What is the process for return or replacement of BFR 949L3 E6327?

All BFR 949L3 E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BFR 949L3 E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR 949L3 E6327 part is unused and in its original packaging.

Return procedure for BFR 949L3 E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BFR 949L3 E6327 Tags

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