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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFR 949T E6327

Name: BFR 949T E6327
Brand: Infineon Technologies
SKU: BFR 949T E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFR 949T E6327

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SC-75, SOT-416

Datasheet:: BFR 949T E6327.pdf

Description:: RF TRANS NPN 10V 9GHZ SC75

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFR949T from Infineon Technologies is an NPN silicon RF transistor optimized for low-noise, high-gain broadband amplification in 0.9–1.8 GHz applications at collector currents of 1–20 mA. It delivers f_T = 9 GHz, noise figure F = 1.0 dB at 1 GHz, and maximum stable power gain G_ms = 20 dB at 900 MHz, targeting front-end LNA stages in GSM/EDGE baseband modules.

For engineers reviewing the BFR949T datasheet, BFR949T pinout, BFR949T application, or BFR949T equivalent, key selection criteria include verified 1.0 dB noise figure at 1 GHz, SC75 package thermal resistance (R_thJS = 300 K/W), h_FE = 100–200 at 5 mA/6 V, C_cb = 0.33 pF typ., and ESD sensitivity requiring handling precautions.

Technical Context

This device employs a high-frequency optimized epitaxial NPN structure with sub-micron emitter geometry to achieve 9 GHz transition frequency. Its low C_cb (0.33 pF typ.) and C_eb (0.6 pF typ.) minimize Miller effect, supporting broadband matching up to 1.8 GHz.

The transistor operates with V_CEO = 10 V and V_CB0 = 20 V, enabling use in common-emitter amplifier configurations with 6–8 V collector bias. Noise performance is specified under matched source impedance (Z_Sopt) at 1 GHz and 1.8 GHz, confirming suitability for dual-band cellular receiver LNAs.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	9 GHz typ. - enables stable gain up to 1.8 GHz with margin for layout parasitics
Noise Figure (F)	1.0 dB at 1 GHz - meets stringent LNA requirements for GSM receiver sensitivity
h_FE	100–200 at I_C = 5 mA, V_CE = 6 V - ensures predictable DC bias stability across production lot
C_cb	0.33 pF typ. at V_CB = 10 V - reduces feedback capacitance for unconditional stability
P_tot	250 mW at T_S = 75 °C - supports continuous operation in compact SC75 PCB footprints
V_CEO	10 V - defines maximum safe collector-emitter voltage in common-emitter topology
R_thJS	300 K/W - quantifies thermal path from junction to soldering point for thermal design

Pinout & Package

Package: SC75 (SOT-323), 3-pin surface-mount plastic package with exposed collector pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1 (B)	Base	Control terminal for current injection; requires DC bias network and RF choke or capacitor coupling
2 (E)	Emitter	Common reference node; connected to ground plane for RF return and thermal dissipation
3 (C)	Collector	Output/power terminal; electrically and thermally coupled to PCB copper pour via exposed pad

Key Features

Feature	Design Value
Low-noise RF amplification	F = 1.0 dB at 1 GHz enables >10 dB SNR improvement in GSM receiver front-ends
High f_T / low capacitance	9 GHz f_T with C_cb = 0.33 pF supports wideband matching without neutralization
ESD-sensitive handling	Class 1B HBM rating per JESD22-A114 - mandates grounded wrist strap and conductive foam during assembly
Thermally enhanced SC75	Exposed collector pad and R_thJS = 300 K/W allow 250 mW dissipation with minimal board area

Applications

GSM/EDGE Base Station Receiver

ISM Band 915 MHz Transceiver

Use Scenario: Low-noise amplification of 900 MHz RF signals prior to downconversion in macrocell BTS receivers.

IC Role / Device Role / Timing Role: NPN RF transistor operating as common-emitter LNA with Z_S = Z_Sopt matching.

Use Value: 1.0 dB noise figure directly improves receiver sensitivity by ≥2 dB over alternatives with F > 1.3 dB.

Use Scenario: High-gain, low-distortion amplification in 915 MHz ISM band wireless sensor node transceivers.

IC Role / Device Role / Timing Role: Final-stage driver amplifier biased at I_C = 15 mA for optimal |S21|² = 16 dB at 1 GHz.

Use Value: 20 dB G_ms at 900 MHz enables single-stage gain sufficient to drive mixer LO or PA input without cascading.

Automotive Telematics Antenna Module

Portable GPS/GLONASS Front-End

Use Scenario: First-stage LNA in vehicle-mounted cellular/GNSS combo antenna modules exposed to wide ambient temperature range.

IC Role / Device Role / Timing Role: Bias-stable NPN transistor with h_FE = 140 typ. at 5 mA/6 V ensuring consistent gain across −40 °C to +85 °C.

Use Value: T_j = 150 °C rating and R_thJS = 300 K/W support reliable operation in sealed, convection-limited enclosures.

Use Scenario: Low-power LNA in battery-operated GPS/GLONASS receivers requiring <2 mA quiescent current.

IC Role / Device Role / Timing Role: Optimized for I_C = 3 mA, V_CE = 8 V, delivering F = 1.5 dB at 1.8 GHz per spec.

Use Value: Sub-2 dB noise figure at 1.8 GHz preserves C/N₀ in weak-signal urban canyon environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP180	f_T = 7 GHz, F = 1.1 dB at 1.8 GHz, C_cb = 0.45 pF	Lower f_T limits usable bandwidth; higher C_cb increases stability risk above 1.5 GHz	Select when 1.8 GHz noise figure is secondary to cost and footprint compatibility
MRF581	f_T = 12 GHz, F = 1.3 dB at 1 GHz, P_tot = 300 mW, SOT-23 package	Higher power dissipation but larger package; 0.3 dB higher noise figure degrades weak-signal SNR	Prefer for higher-output driver stages where gain >22 dB is required at 900 MHz

Compared with BFP180 and MRF581, the BFR949T uniquely balances 1.0 dB noise figure at 1 GHz, 9 GHz f_T, and SC75 thermal performance-making it optimal for space-constrained, sensitivity-critical 0.9–1.8 GHz LNAs where both noise and stability must be simultaneously controlled.

Availability

BFR949T is available at Aetrix Electronics and suitable for GSM/EDGE base station receivers, ISM band 915 MHz transceivers, and automotive telematics antenna modules requiring stable component supply across extended temperature and lifecycle windows.

Supply support for BFR949T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949.

The BFR949T belongs to Infineon's silicon RF transistor product line, engineered specifically for high-linearity, low-noise amplification in cellular infrastructure and wireless communication front-ends up to 2 GHz.

FAQ

What is the recommended DC bias condition for minimum noise figure?

For minimum noise figure at 1 GHz, bias the BFR949T at I_C = 5 mA and V_CE = 6 V with source impedance matched to Z_Sopt = 25 + j15 Ω. This condition yields F = 1.0 dB per datasheet Figure 7 and is validated across production lots.

Is the SC75 package lead-free and RoHS-compliant?

Yes, the BFR949T SC75 package is lead-free and RoHS-compliant per EU Directive 2011/65/EU, with homogeneous material analysis confirming Pb content <100 ppm and full compliance with Annex II substance restrictions.

Can this transistor be used in Class A amplifier configurations?

Yes - the BFR949T supports Class A operation with I_C up to 20 mA and V_CE up to 8 V. At I_C = 15 mA and V_CE = 6 V, transducer gain |S21|² reaches 16 dB at 1 GHz, meeting linearity requirements for low-distortion small-signal amplification.

What thermal derating applies above 75 °C case temperature?

Per datasheet Figure 5, total power dissipation must be linearly derated above T_S = 75 °C at 2.5 mW/°C. At T_S = 100 °C, P_tot is reduced to 187.5 mW; operation beyond 150 °C junction temperature violates absolute maximum ratings.

BFR 949T E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 10V

Frequency - Transition:: 9GHz

Noise Figure (dB Typ @ f):: 1dB ~ 2.5dB @ 1GHz

Gain:: 20dB

Power - Max:: 250mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 5mA, 6V

Current - Collector (Ic) (Max):: 35mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SC75-3D

BFR 949T E6327 FAQ

1.How can I place an order for BFR 949T E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFR 949T E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFR 949T E6327 reliable?

The price and inventory of BFR 949T E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR 949T E6327 is usually 5 days.

3.What payment methods are accepted for BFR 949T E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR 949T E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFR 949T E6327?

BFR 949T E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFR 949T E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFR 949T E6327?

For technical support, including BFR 949T E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR 949T E6327 requirements.

6.How does Aetrix verify that BFR 949T E6327 is sourced from the original manufacturer or authorized distributors?

All BFR 949T E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR 949T E6327 meets industry standards.

7.What is the process for return or replacement of BFR 949T E6327?

All BFR 949T E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BFR 949T E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFR 949T E6327 part is unused and in its original packaging.

Return procedure for BFR 949T E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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