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NXP Semiconductors BFR94AW,115
- Part No.:
- BFR94AW,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Bipolar RF Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
BFR94AW,115.pdf
- Description:
- RF TRANS NPN 15V 5GHZ SOT323-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,460
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Product details
Overview
BFR94AW from NXP Semiconductors is a silicon NPN RF transistor in SOT323 package, rated for 5 GHz transition frequency (fT), 15 V VCEO, 25 mA IC, and 300 mW Ptot, designed for high-gain, low-noise amplification in 1 GHz signal paths such as cellular front-end modules and UHF receiver stages.
For engineers reviewing the BFR94AW datasheet, BFR94AW pinout, BFR94AW application, or BFR94AW equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (Rth(j-sp) = 190 K/W), noise figure (NF = 2 dB @ 1 GHz), and unilateral gain (GUM = 14 dB @ 1 GHz) - all critical for RF small-signal amplifier design and replacement validation.
Technical Context
The BFR94AW employs a gold-metallized silicon epitaxial NPN structure optimized for wideband RF performance up to 5 GHz fT, with feedback capacitance (Cre) of 0.35 pF enabling stable high-frequency operation. Its AEC-Q101 qualification confirms suitability for automotive-grade reliability testing including temperature cycling and HTRB.
Designed for common-emitter configuration, it delivers 14 dB unilateral power gain at 1 GHz and 2 dB noise figure under matched conditions (ΓS = Γopt), with DC current gain (hFE) ranging 65–135 at IC = 15 mA/VCE = 10 V - supporting precise biasing in low-power RF amplifier stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| fT | 5 GHz typical - enables stable amplification up to UHF band (e.g., GSM/DCS/PCS) without oscillation risk. |
| NF | 2 dB @ 1 GHz - ensures minimal signal degradation in sensitive receiver LNA stages. |
| GUM | 14 dB @ 1 GHz - provides sufficient gain margin for cascaded RF stages with low external component count. |
| VCEO | 15 V - supports operation from standard 12 V supply rails with headroom for transient spikes. |
| IC | 25 mA max - defines maximum continuous collector current for thermal-safe linear operation. |
| Ptot | 300 mW @ Tsp ≤ 93 °C - sets absolute power limit before thermal derating begins; requires PCB copper area for heat sinking. |
| Rth(j-sp) | 190 K/W - quantifies junction-to-solder-point thermal resistance; informs heatsink design when operating near Ptot. |
Pinout & Package
Package: SOT323 (plastic surface-mounted, 3-lead miniature package per IEC 60134; footprint compatible with JEDEC TO-236AB).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biased junction; requires DC bias network and RF choke or matching network for AC grounding. |
| 2 | Emiter | Common reference node in common-emitter configuration; connected to RF ground plane with minimal inductance. |
| 3 | Collector | Output terminal carrying amplified RF signal; solder point temperature (Tsp) must stay ≤93 °C for full Ptot rating. |
Key Features
| Feature | Design Value |
|---|---|
| Gold metallization | Ensures long-term bond-wire integrity and interconnect reliability under thermal cycling and humidity stress. |
| AEC-Q101 qualification | Validates robustness for automotive electronics applications including infotainment RF receivers and telematics modules. |
| High power gain | Delivers GUM = 14 dB @ 1 GHz, reducing need for additional gain stages in compact RF designs. |
| Low feedback capacitance | Cre = 0.35 pF minimizes internal Miller effect, improving stability and bandwidth in common-emitter amplifiers. |
Applications
| Cellular Front-End Amplifier | UHF Receiver LNA |
|---|---|
Use Scenario: Low-noise amplification of 800–960 MHz GSM receive signals prior to downconversion in mobile handset transceivers. IC Role / Device Role / Timing Role: NPN RF transistor configured as common-emitter LNA with ΓS = Γopt for minimum noise figure. Use Value: 2 dB NF and 14 dB GUM preserve SNR while enabling single-stage gain sufficient for ADC input drive. |
Use Scenario: Signal amplification in 433 MHz ISM-band wireless sensor receivers used in industrial monitoring systems. IC Role / Device Role / Timing Role: Small-signal NPN transistor biased for linear Class-A operation in narrowband tuned amplifier stage. Use Value: 5 GHz fT and 0.35 pF Cre ensure stable gain and predictable impedance matching at sub-GHz frequencies. |
| RF Mixer Active Device | Local Oscillator Buffer |
Use Scenario: Active switching element in passive-balanced mixer topologies for 1–2 GHz satellite communication downconverters. IC Role / Device Role / Timing Role: NPN transistor operated in nonlinear switching mode to provide local oscillator injection and signal mixing. Use Value: High fT and low Cre minimize conversion loss and LO feedthrough in broadband mixer designs. |
Use Scenario: Isolation and drive amplification of 1.5 GHz LO signals in phased-array radar transceiver modules. IC Role / Device Role / Timing Role: Common-emitter buffer stage delivering stable output power while rejecting load impedance variations. Use Value: 15 V VCEO and 25 mA IC support clean 0 dBm output into 50 Ω with minimal harmonic distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN RF transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFR92A,115 | Same SOT323 package but lower fT (3 GHz typ), higher NF (3 dB @ 1 GHz), and reduced GUM (12 dB @ 1 GHz). | Less suitable for >1 GHz LNA designs requiring lowest noise; acceptable for cost-sensitive 800 MHz ISM applications. | Select BFR92A,115 only if system NF budget allows ≥1 dB penalty and gain margin is ≥2 dB above requirement. |
| MRF9011LT1G | TO-236AB package (same footprint), higher Ptot (500 mW), higher VCEO (20 V), but no AEC-Q101 qualification. | Supports higher output power in driver stages but lacks automotive reliability validation; not drop-in due to different thermal profile. | Choose MRF9011LT1G for non-automotive 2 W PA driver stages where thermal headroom is critical and qualification is not required. |
Compared with BFR94AW, BFR92A,115 trades 2 dB NF and 2 dB GUM for lower cost, while MRF9011LT1G offers 200 mW extra dissipation at the expense of automotive qualification - making BFR94AW the optimal choice for AEC-Q101-compliant, noise-critical 1 GHz RF amplifiers.
Availability
BFR94AW is available at Aetrix Electronics and suitable for cellular front-end amplifiers, UHF receiver LNAs, RF mixers, and local oscillator buffers requiring stable component supply across automotive, industrial, and wireless infrastructure programs.
Supply support for BFR94AW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with core expertise in RF, analog, and mixed-signal technologies.
The BFR94AW belongs to NXP's high-frequency silicon transistor product line, engineered specifically for low-noise, high-gain amplification in sub-6 GHz wireless infrastructure and automotive telematics systems.
FAQ
What is the maximum operating frequency supported by the BFR94AW?
The BFR94AW has a typical transition frequency (fT) of 5 GHz, confirmed under IC = 15 mA and VCE = 10 V at 500 MHz test frequency. This enables stable small-signal amplification up to 1–2 GHz in practical circuits, with measured unilateral gain (GUM) of 14 dB at 1 GHz and 8 dB at 2 GHz per the official datasheet.
Is the BFR94AW qualified for automotive applications?
Yes, the BFR94AW is AEC-Q101 qualified, as explicitly stated in its features and benefits section. This qualification covers stress tests including temperature cycling, high-temperature reverse bias (HTRB), and mechanical shock - validating its use in automotive RF modules such as keyless entry receivers and infotainment tuners.
What is the thermal resistance from junction to solder point for the BFR94AW?
The BFR94AW has a typical thermal resistance Rth(j-sp) of 190 K/W, defined with solder point temperature (Tsp) limited to ≤93 °C. This value is critical for PCB thermal design: for example, at 200 mW dissipation, junction temperature rise is ~38 °C above Tsp, requiring adequate copper pour on the collector pad.
How does the BFR94AW compare to the BFR94A in terms of package and performance?
The BFR94AW uses the same silicon die as the SOT23-packaged BFR94A but is housed in the smaller SOT323 package. Electrical characteristics including fT, NF, GUM, and hFE are identical per datasheet; only package dimensions and thermal resistance differ - Rth(j-sp) is 190 K/W for BFR94AW versus 220 K/W for BFR94A due to improved thermal path in SOT323.
What is the recommended bias condition for achieving minimum noise figure in the BFR94AW?
To achieve the specified 2 dB noise figure at 1 GHz, the BFR94AW must be biased at IC = 5 mA and VCE = 10 V with source reflection coefficient ΓS matched to Γopt (optimal noise impedance). The datasheet provides Γopt contours in Figures 11–13, confirming Γopt ≈ 0.5∠−135° at 1 GHz for this condition.
BFR94AW,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Voltage - Collector Emitter Breakdown (Max):
- 15V
- Frequency - Transition:
- 5GHz
- Noise Figure (dB Typ @ f):
- 2dB ~ 3dB @ 1GHz ~ 2GHz
- Gain:
- -
- Power - Max:
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 65 @ 15mA, 10V
- Current - Collector (Ic) (Max):
- 25mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70
BFR94AW,115 FAQ
1.How can I place an order for BFR94AW,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BFR94AW,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BFR94AW,115 reliable?
The price and inventory of BFR94AW,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFR94AW,115 is usually 5 days.
3.What payment methods are accepted for BFR94AW,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFR94AW,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BFR94AW,115?
BFR94AW,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BFR94AW,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BFR94AW,115?
For technical support, including BFR94AW,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFR94AW,115 requirements.
6.How does Aetrix verify that BFR94AW,115 is sourced from the original manufacturer or authorized distributors?
All BFR94AW,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFR94AW,115 meets industry standards.
7.What is the process for return or replacement of BFR94AW,115?
All BFR94AW,115 units undergo pre-shipment inspection (PSI). If there is an issue with BFR94AW,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BFR94AW,115 part is unused and in its original packaging.
Return procedure for BFR94AW,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BFR94AW,115 Tags
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