Infineon Technologies BFS17PE6327HTSA1

Overview

BFS17PE6327HTSA1 from Infineon is an NPN silicon RF transistor optimized for broadband amplification up to 1 GHz, with a transition frequency of 1.4 GHz, 3.5 dB minimum noise figure at 800 MHz, 21.5 dBm OIP3, and 10 dBm P-1dB output compression-used in sub-GHz mixer and oscillator stages in portable radio front-ends.

For engineers reviewing the BFS17PE6327HTSA1 datasheet, BFS17PE6327HTSA1 pinout, BFS17PE6327HTSA1 application, or BFS17PE6327HTSA1 equivalent, key selection criteria include noise performance at 2–20 mA bias, SOT23 thermal dissipation limits (280 mW), VCEO = 15 V rating, and verified 50 Ω transducer gain of 13 dB at 500 MHz.

Technical Context

This device operates as a high-frequency small-signal amplifier with DC current gain (hFE) ranging from 40 to 150 at IC = 2 mA and VCE = 1 V, and down to 20–70 at IC = 25 mA. Its RF performance is characterized under 50 Ω source/load impedance with ZSopt/ZLopt matching for OIP3 optimization.

The transistor exhibits Ccb = 0.55–0.8 pF, Ceb = 0.9–1.45 pF, and Cce = 0.27 pF at specified bias conditions, enabling stable broadband operation below 1 GHz. Junction temperature must remain ≤150 °C, with RthJS ≤195 K/W limiting continuous power handling in SOT23.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount plastic package with 3 leads, RoHS-compliant, rated for TJ ≤ 150 °C and RthJS ≤ 195 K/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFS17N E6327 (identical electrical specs), BFS17PE6327HTSA1 offers no performance distinction; versus MRF58100LT1G, it trades 1.1 GHz extra fT and +120 mW Ptot for 1 dB lower NF and +2.5 dB higher OIP3-favoring noise-critical receive paths over raw output capability.

Availability

BFS17PE6327HTSA1 is available at Aetrix Electronics and suitable for ISM band receivers, sub-GHz mixers, portable radio oscillators, and UHF RFID reader drivers requiring stable component supply with full RoHS compliance and SOT23 footprint consistency.

Supply support for BFS17PE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, industrial, and RF solutions, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The BFS17P series belongs to Infineon's legacy RF transistor product line, designed specifically for cost-sensitive, high-volume sub-GHz wireless infrastructure and consumer radio applications demanding repeatable noise and linearity performance.

FAQ

Is BFS17PE6327HTSA1 pin-compatible with BFS17N E6327?

Yes-both share identical SOT23 pin configuration (1=B, 2=E, 3=C), electrical specifications, and thermal characteristics. The "P" and "N" suffixes denote internal Infineon marking variants for the same silicon die and assembly lot; no redesign or layout change is required when substituting between them.

What is the recommended DC bias for optimal noise figure?

For minimum noise figure (NFmin = 3.5 dB), bias the device at IC = 2 mA and VCE = 5 V with a 50 Ω source impedance. This condition is validated in the datasheet's Table 4 and corresponds to ZS = ZSopt; deviation increases NF by up to 1.5 dB at ±5 mA.

Can BFS17PE6327HTSA1 operate reliably at 900 MHz?

Yes-its fT = 1.4 GHz (typ.) and verified |S21|² = 13 dB at 500 MHz and OIP3 = 21.5 dBm at 800 MHz confirm stable gain and linearity up to 900 MHz. Performance remains usable to 1 GHz, though transducer gain decreases ~3 dB per 200 MHz above 500 MHz per typical curves.

Does this part require external ESD protection in circuit design?

Yes-the datasheet explicitly labels BFS17PE6327HTSA1 as ESD-sensitive (HBM Class 1B). While the SOT23 package provides basic mechanical protection, designers must observe IEC 61000-4-2 handling protocols and include series resistors (≥100 Ω) or TVS diodes on base/emitter lines in final PCB layout to prevent gate oxide damage during board assembly or field operation.