Infineon Technologies BFS17SE6327HTSA1

Overview

BFS17SE6327HTSA1 from Infineon Technologies is an NPN silicon RF transistor in SOT363 package, rated for V_CEO = 15 V, I_C = 25 mA DC, f_T = 1.3–2.5 GHz (typ./max.), and optimized for broadband amplifiers up to 1 GHz at 1–20 mA collector current. It delivers P-1dB = 11 dBm and NF_min = 3 dB at 800 MHz with 50 Ω source/load.

For engineers reviewing the BFS17SE6327HTSA1 datasheet, BFS17SE6327HTSA1 pinout, BFS17SE6327HTSA1 application, or BFS17SE6327HTSA1 equivalent, key selection criteria include transition frequency vs. bias, noise figure at 800 MHz, C_cb = 0.55 pF (typ.), V_CEsat ≤ 0.4 V, and SOT363 thermal resistance R_thJS ≤ 240 K/W.

Technical Context

This dual-emitter, dual-collector NPN RF transistor features symmetrical pin configuration (Pin 1=B1, Pin 2=E1, Pin 3=C2, Pin 4=B2, Pin 5=E2, Pin 6=C1) enabling balanced push-pull or cascode amplifier topologies. Its f_T exceeds 1.3 GHz at I_C = 2 mA and remains >1 GHz up to I_C = 25 mA, supporting wideband gain stability across UHF.

Low capacitance values-C_cb = 0.55 pF (typ.), C_eb = 0.9 pF (typ.), C_ce = 0.2 pF (typ.)-minimize Miller effect and enable high-frequency matching. The device operates with V_CE = 5 V bias and achieves IP3 = 22.5 dBm at 800 MHz under matched 50 Ω conditions.

Key Specifications

Pinout & Package

SOT363 (SC-88) 6-pin plastic surface-mount package with exposed thermal pad; dimensions 2.1 × 1.25 × 0.9 mm; RoHS-compliant, Pb-free, ESD-sensitive handling required.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFS17N E6327, BFS17SE6327HTSA1 offers identical RF performance but different reel quantity; versus MMDT2222A-7-F, it provides >4× higher f_T, 15× lower C_cb, and verified NF_min, making it the sole viable option for UHF LNA and broadband driver roles.

Availability

BFS17SE6327HTSA1 is available at Aetrix Electronics and suitable for UHF wireless receiver front-ends, GSM/EDGE power amplifier drivers, and ISM band 868/915 MHz transceivers requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.

Supply support for BFS17SE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, headquartered in Munich.

The BFS17S series belongs to Infineon's discrete RF transistor product line, designed specifically for high-frequency, low-noise, and medium-power amplification in portable wireless infrastructure and consumer radio applications.

FAQ

Is BFS17SE6327HTSA1 pin-compatible with BFS17N E6327?

Yes - both share identical SOT363 pinout (B1/E1/C2/B2/E2/C1), mechanical footprint, and electrical specifications. The only distinction is packaging: BFS17SE6327HTSA1 ships on 180 mm reels (3,000 units), while BFS17N E6327 uses 330 mm reels (10,000 units). Layout and schematic reuse is fully supported.

What is the recommended bias condition for minimum noise figure?

For NF_min = 3 dB at 800 MHz, Infineon specifies I_C = 2 mA and V_CE = 5 V with 50 Ω source impedance. Base bias must be stabilized via resistive divider or current source to maintain this operating point; emitter degeneration improves stability but increases noise.

Can BFS17SE6327HTSA1 be used in Class A amplifier designs?

Yes - its 25 mA I_C max and 280 mW P_tot rating support Class A operation up to ~15 mA collector current. At I_C = 10 mA and V_CE = 5 V, DC power is 50 mW, leaving ample thermal margin. Ensure PCB copper area meets R_thJS ≤ 240 K/W requirement for sustained operation.

Does this device require external ESD protection in circuit design?

No - BFS17SE6327HTSA1 incorporates on-die ESD protection rated per HBM Class 1B (≥2 kV), but handling precautions remain mandatory. Board-level protection is unnecessary unless system-level stress exceeds 2 kV HBM; standard PCB layout practices (grounded solder mask, short traces) suffice for typical RF module integration.