Infineon Technologies BFS17SH6327XTSA1

Overview

BFS17SH6327XTSA1 from Infineon Technologies is an NPN silicon RF transistor optimized for broadband amplification up to 1 GHz at collector currents from 1 mA to 20 mA, featuring f_T = 1.3–2.5 GHz (IC = 2–25 mA), NF_min = 3–5 dB at 800 MHz, and P-1dB = 11 dBm - deployed in low-noise RF front-ends for FM radio receivers and ISM-band transceivers.

For engineers reviewing the BFS17SH6327XTSA1 datasheet, BFS17SH6327XTSA1 pinout, BFS17SH6327XTSA1 application, or BFS17SH6327XTSA1 equivalent, key selection criteria include transition frequency vs. bias current, minimum noise figure at 800 MHz, C_cb = 0.55–0.8 pF at 5 V, V_CEO = 15 V rating, and SOT363 package thermal resistance R_thJS ≤ 240 K/W.

Technical Context

This dual-emitter NPN RF transistor uses a symmetric SOT363 structure with two independent transistor cells (B1/E1/C2 and B2/E2/C1) sharing common emitter leads, enabling balanced push-pull or cascode configurations. Its f_T scalability across IC (1–25 mA) and V_CE (1–10 V) supports tunable gain-noise trade-offs in narrowband and broadband stages.

AC performance is characterized under pulsed conditions to minimize self-heating: C_cb, C_ce, and C_eb are measured with grounded terminals per standard RF BJT test setup; IP3 = 22.5 dBm and |S21e|² = 14 dB are specified at Z_S = Z_L = 50 Ω, confirming suitability for linear small-signal amplification.

Key Specifications

Pinout & Package

The BFS17SH6327XTSA1 is housed in a RoHS-compliant SOT363 (SC-88) plastic surface-mount package with six leads and dual-transistor topology. Pin 1 = B1, Pin 2 = E1, Pin 3 = C2, Pin 4 = B2, Pin 5 = E2, Pin 6 = C1; emitter leads (Pins 2 & 5) are internally tied for common-emitter use or left independent for differential operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFS17RH6327XTSA1, this part offers identical RF performance but differs in logistics packaging; versus MMDT2222A, it delivers 4× higher f_T and 2.7× lower C_cb, making it uniquely suited for sub-1 GHz low-noise amplification where gain-bandwidth and capacitance are critical.

Availability

BFS17SH6327XTSA1 is available at Aetrix Electronics and suitable for FM radio front-ends, ISM-band transceiver LNAs, and UHF TV tuner IF amplifiers requiring stable component supply, consistent parametric performance, and RoHS-compliant SMT packaging.

Supply support for BFS17SH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global R&D and manufacturing infrastructure.

The BFS17S series belongs to Infineon's legacy RF bipolar transistor product line, designed specifically for cost-sensitive, high-volume consumer RF applications demanding predictable noise and gain performance below 1 GHz.

FAQ

What is the maximum continuous collector current for BFS17SH6327XTSA1?

The absolute maximum continuous collector current is 25 mA at T_A = 25 °C. Derating applies above 25 °C ambient: total power dissipation drops to 280 mW at T_S = 93 °C, with thermal resistance R_thJS ≤ 240 K/W limiting junction temperature to 150 °C under proper PCB copper pour conditions.

Can BFS17SH6327XTSA1 be used in a common-base configuration?

Yes - the SOT363 pinout supports common-base use: connect Pin 2 (E1) and Pin 5 (E2) to RF ground, apply input to Pin 1 (B1) or Pin 4 (B2), and take output from Pin 6 (C1) or Pin 3 (C2). C_eb = 0.9–1.45 pF and low C_cb ensure stable high-frequency input impedance and wideband response.

Is BFS17SH6327XTSA1 suitable for Class A amplifier designs?

Yes - its linear h_FE (40–150) and low distortion characteristics (IP3 = 22.5 dBm, P-1dB = 11 dBm) support Class A operation at I_C = 5–10 mA with V_CE = 5 V. Thermal derating must be observed: at 10 mA, P_D ≈ 50 mW, well within the 280 mW limit at T_S ≤ 93 °C.

How does the dual-transistor structure affect PCB layout?

The dual NPN layout allows shared emitter routing or independent differential paths. For single-ended use, tie Pins 2 and 5 together and route separately from collectors (Pins 3 and 6); for differential use, maintain symmetrical trace lengths and ground vias near each emitter to preserve amplitude/phase balance up to 1 GHz.