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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFS17WE6327HTSA1

Name: BFS17WE6327HTSA1
Brand: Infineon Technologies
SKU: BFS17WE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFS17WE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SC-70, SOT-323

Datasheet:: BFS17WE6327HTSA1.pdf

Description:: RF TRANS NPN 15V 1.4GHZ SOT323-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFS17WE6327HTSA1 from Infineon Technologies is an NPN silicon RF transistor optimized for broadband amplifier stages up to 1 GHz, with f_T = 1.4 GHz (typ.), V_CEO = 15 V, and P_tot = 280 mW at T_S ≤ 93 °C; used in low-power RF front-ends of FM/AM receivers and ISM-band transceivers.

For engineers reviewing the BFS17WE6327HTSA1 datasheet, BFS17WE6327HTSA1 pinout, BFS17WE6327HTSA1 application, or BFS17WE6327HTSA1 equivalent, key selection criteria include noise figure (NF_min = 3.5 dB at 800 MHz), transducer gain (|S₂₁e|² = 14 dB at 500 MHz), third-order intercept (IP3 = 22.5 dBm), and SOT323 package thermal resistance (R_thJS ≤ 205 K/W).

Technical Context

This device operates as a high-frequency NPN bipolar junction transistor with grounded-emitter configuration, supporting DC bias currents from 1 mA to 20 mA and collector-emitter voltages up to 15 V. Its transition frequency exceeds 1.3 GHz under standard test conditions (I_C = 2 mA, V_CE = 5 V), enabling stable small-signal amplification across UHF bands.

Capacitance profiling shows C_cb = 0.55 pF (typ.) and C_eb = 0.9 pF (typ.) at 1 MHz, contributing to predictable impedance matching in 50 Ω systems. Minimum noise figure is specified at 3.5 dB with source impedance Z_S = 50 Ω and V_CE = 5 V, confirming suitability for low-noise receive-path amplification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	15 V - maximum safe collector-emitter voltage before breakdown; defines headroom for RF signal swing in amplifier designs
f_T	1.4 GHz (typ.) - transition frequency indicating usable gain bandwidth limit for small-signal amplification
NF_min	3.5 dB at 800 MHz - lowest achievable noise figure; critical for sensitivity in receiver LNA stages
\|S₂₁e\|²	14 dB at 500 MHz - transducer power gain; determines signal amplification capability in matched 50 Ω systems
P_tot	280 mW at T_S ≤ 93 °C - total dissipation limit defining thermal derating envelope on PCB
C_cb	0.55 pF (typ.) - collector-base capacitance; directly impacts Miller effect and high-frequency stability
h_FE	40–70 at I_C = 2 mA - DC current gain range used for bias network design and stability analysis

Pinout & Package

Package: SOT323 - surface-mount plastic package with 3 terminals, footprint compatible with JEDEC MO-203AA, thermal resistance R_thJS ≤ 205 K/W.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control terminal for injection of base current; requires external bias network for stable Q-point setting
2	Emitter (E)	Common reference node in CE configuration; typically AC-grounded via bypass capacitor in RF amplifiers
3	Collector (C)	Output terminal carrying amplified RF current; connected to output matching network and DC supply decoupling

Key Features

Feature	Design Value
RoHS-compliant packaging	Pb-free SOT323 construction meeting EU Directive 2011/65/EU; no lead content in terminations or molding compound
ESD-sensitive handling	Class H2 per JESD22-A114 (2 kV HBM); requires grounded workstations and anti-static packaging during assembly
Low minimum noise figure	NF_min = 3.5 dB at 800 MHz enables high-sensitivity reception in sub-1 GHz wireless receivers
High transducer gain	\|S₂₁e\|² = 14 dB at 500 MHz supports single-stage amplification without cascading in compact RF modules
Controlled capacitance profile	C_cb = 0.55 pF and C_eb = 0.9 pF (typ.) allow accurate input/output impedance modeling for microstrip matching

Applications

FM Radio Receiver Front-End

ISM-Band Transmitter Driver

Use Scenario: Low-noise amplification of 87–108 MHz FM broadcast signals prior to mixer stage.

IC Role / Device Role / Timing Role: NPN RF transistor operating in common-emitter configuration as first-stage LNA.

Use Value: NF_min = 3.5 dB ensures minimal degradation of receiver sensitivity; f_T > 1.3 GHz provides margin for harmonic suppression.

Use Scenario: Final driver stage in 433 MHz ISM-band OOK/ASK transmitters for remote controls and sensors.

IC Role / Device Role / Timing Role: Linear Class-A amplifier delivering 14 dB gain into 50 Ω load at 433 MHz.

Use Value: |S₂₁e|² = 14 dB reduces need for additional gain stages; P_tot = 280 mW supports continuous operation at 20 mA I_C.

Portable AM Receiver IF Amplifier

Bluetooth LE 2.4 GHz Pre-Driver (Fundamental Mode)

Use Scenario: Intermediate-frequency amplification at 455 kHz in battery-powered AM radios.

IC Role / Device Role / Timing Role: High-gain, low-distortion CE amplifier biased at I_C = 2 mA for optimal h_FE and linearity.

Use Value: h_FE = 40–70 enables stable DC bias design; low C_cb minimizes feedback-induced oscillation risk.

Use Scenario: Fundamental-mode pre-driver stage preceding a GaAs FET PA in Bluetooth LE 2.4 GHz transceivers.

IC Role / Device Role / Timing Role: Small-signal amplifier operating below f_T/2 to ensure linear gain and low distortion at fundamental frequency.

Use Value: f_T = 1.4 GHz allows reliable operation at 2.4 GHz fundamental with adequate gain margin and IP3 = 22.5 dBm supports required OIP3.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFR92A	f_T = 5 GHz (typ.), V_CEO = 12 V, C_cb = 0.35 pF - higher speed but lower breakdown voltage and tighter layout tolerance	Better suited for >1 GHz narrowband VCO buffer or oscillator tank circuits than broadband amplification	Select when f > 1 GHz operation is mandatory and supply voltage ≤ 12 V; verify thermal derating due to smaller die size
MRF901	f_T = 1.2 GHz (typ.), V_CEO = 20 V, P_tot = 300 mW - higher voltage rating and power handling, but NF_min = 4.5 dB	Preferred for higher-voltage industrial RF modules where noise is secondary to ruggedness	Choose when V_CE > 15 V or ambient temperature exceeds 125 °C; accept 1 dB NF penalty for reliability margin

Compared with BFR92A and MRF901, BFS17WE6327HTSA1 offers the best balance of noise performance (3.5 dB), gain (14 dB), and voltage headroom (15 V) in the SOT323 footprint-making it optimal for cost-sensitive, space-constrained 800–900 MHz receiver front-ends.

Availability

BFS17WE6327HTSA1 is available at Aetrix Electronics and suitable for FM radio receivers, ISM-band transmitters, portable AM radios, and Bluetooth LE pre-driver circuits requiring stable component supply and RoHS-compliant packaging.

Supply support for BFS17WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, headquartered in Munich.

The BFS17W series belongs to Infineon's discrete RF transistor product line, designed specifically for low-noise, high-gain amplification in sub-1 GHz consumer and industrial wireless equipment.

FAQ

Is BFS17WE6327HTSA1 suitable for 2.4 GHz operation?

No-its typical f_T is 1.4 GHz, and gain drops significantly above 1 GHz. At 2.4 GHz, |S₂₁e|² falls below 6 dB and NF_min degrades beyond 6 dB. It may serve only as a fundamental-mode pre-driver with strict layout control and derated gain expectations, not as a primary 2.4 GHz amplifier.

What is the recommended bias point for minimum noise figure?

For NF_min = 3.5 dB at 800 MHz, use I_C = 2 mA and V_CE = 5 V with Z_S = 50 Ω. The datasheet specifies this condition explicitly; deviation increases noise by ≥0.5 dB per 0.5 mA I_C shift or 1 V V_CE change.

Can BFS17WE6327HTSA1 replace BFS17W in existing designs?

Yes-BFS17WE6327HTSA1 is the tape-and-reel packaged version of BFS17W (same die, same electrical specs, same SOT323 outline). The "E6327" suffix denotes reel packaging (3,000 pcs/reel, ø180 mm), and "HTSA1" indicates Infineon's standard halogen-free, RoHS-compliant marking code.

Does this transistor require external neutralization for stability?

Not typically-its C_cb = 0.55 pF and f_T = 1.4 GHz yield moderate Miller multiplication. Stability factor k > 1 is maintained up to ~900 MHz with proper grounding and short emitter leads. Neutralization is unnecessary below 1 GHz but recommended for narrowband >1 GHz designs with high-Q matching networks.

BFS17WE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 15V

Frequency - Transition:: 1.4GHz

Noise Figure (dB Typ @ f):: 3.5dB ~ 5dB @ 800MHz

Gain:: -

Power - Max:: 280mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 2mA, 1V

Current - Collector (Ic) (Max):: 25mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT323

BFS17WE6327HTSA1 FAQ

1.How can I place an order for BFS17WE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFS17WE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFS17WE6327HTSA1 reliable?

The price and inventory of BFS17WE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFS17WE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BFS17WE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFS17WE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFS17WE6327HTSA1?

BFS17WE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFS17WE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFS17WE6327HTSA1?

For technical support, including BFS17WE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFS17WE6327HTSA1 requirements.

6.How does Aetrix verify that BFS17WE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BFS17WE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFS17WE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BFS17WE6327HTSA1?

All BFS17WE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFS17WE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFS17WE6327HTSA1 part is unused and in its original packaging.

Return procedure for BFS17WE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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