Infineon Technologies BFS17WH6327XTSA1

Overview

BFS17WH6327XTSA1 from Infineon Technologies is an NPN silicon RF transistor optimized for broadband amplification up to 1 GHz at collector currents from 1 mA to 20 mA, with f_T = 1.3 GHz (typ), V_CEO = 15 V, and NF_min = 3.5 dB at 800 MHz - deployed in low-noise RF front-ends for ISM-band transceivers and FM radio receivers.

For engineers reviewing the BFS17WH6327XTSA1 datasheet, BFS17WH6327XTSA1 pinout, BFS17WH6327XTSA1 application, or BFS17WH6327XTSA1 equivalent, key selection criteria include transition frequency, minimum noise figure, collector-emitter saturation voltage, thermal resistance (R_thJS ≤ 205 K/W), and SOT323 package compatibility with high-density RF PCB layouts.

Technical Context

This device operates as a single-stage NPN RF amplifier with grounded-emitter configuration, supporting small-signal gain up to |S_21e|² = 14 dB at 500 MHz under 50 Ω source/load conditions. Its f_T vs. I_C curve shows peak performance near 2–5 mA, and C_cb = 0.55 pF (typ) enables stable matching above 800 MHz.

Designed for DC-biased Class-A operation, it delivers P_-1dB = 11 dBm and IP3 = 22.5 dBm at 800 MHz with Z_Sopt/Z_Lopt, while maintaining V_CEsat ≤ 0.4 V at I_C = 10 mA/I_B = 1 mA - critical for low-voltage portable RF stages.

Key Specifications

Pinout & Package

Package: SOT323 - surface-mount plastic package with 1.25 mm × 2.1 mm footprint, 0.65 mm lead pitch, and exposed collector pad for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFP181H6327XTSA1 and MRF581W, BFS17WH6327XTSA1 offers optimal balance of noise, gain, and voltage margin for sub-1 GHz ISM/FM applications - its SOT323 pinout and 15 V V_CEO support robust 5 V supply designs without derating.

Availability

BFS17WH6327XTSA1 is available at Aetrix Electronics and suitable for FM radio receivers, ISM-band IoT transceivers, and automotive keyless entry systems requiring stable component supply and RoHS-compliant packaging.

Supply support for BFS17WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D and manufacturing infrastructure.

The BFS17W belongs to Infineon's legacy RF bipolar transistor product line, engineered specifically for cost-sensitive, high-volume UHF amplifier applications in consumer and industrial wireless equipment.

FAQ

What is the recommended bias point for minimum noise figure?

For NF_min = 3.5 dB at 800 MHz, use I_C = 2 mA and V_CE = 5 V with source impedance Z_S = 50 Ω. Base bias must be stabilized with emitter degeneration resistor (R_E ≈ 100 Ω) to suppress thermal runaway and maintain noise-optimal operating point across temperature.

Can BFS17WH6327XTSA1 replace BFS17W in existing designs?

Yes - BFS17WH6327XTSA1 is the tape-and-reel packaged variant of BFS17W with identical electrical specifications, pinout, and SOT323 footprint. The "H6327" suffix denotes reel packaging (3,000 pcs/reel, ø180 mm), and "XTSA1" indicates Infineon's standard commercial-grade marking and traceability.

Is thermal pad connection required for reliable operation?

No dedicated thermal pad exists in SOT323; however, the collector terminal (Pin 3) serves as primary thermal path. For continuous 280 mW operation, solder Pin 3 to ≥10 mm² copper area on inner layer with ≥4 thermal vias (0.3 mm diameter) to internal ground plane - per Infineon AN077 guidelines.

Does this device support DC-coupled input/output configurations?

DC-coupled inputs are not recommended due to h_FE variation (40–150) and thermal drift; AC coupling with 100 pF–1 nF capacitors is standard. DC-coupled outputs are feasible only when V_CE remains ≥1 V under all operating conditions to avoid saturation-induced distortion.