Infineon Technologies BFS 360L6 E6327

Overview

BFS360L6 E6327 from Infineon Technologies is a dual NPN silicon RF transistor in TSLP-6-1 package, designed for low-noise amplifier and oscillator stages up to 3.5 GHz with Pout > 10 dBm. It delivers 1.0 dB noise figure at 1.8 GHz, 14 GHz transition frequency (fT), and 14.5 dB maximum available power gain at 1.8 GHz under matched conditions.

For engineers reviewing the BFS360L6 E6327 datasheet, BFS360L6 E6327 pinout, BFS360L6 E6327 application, or BFS360L6 E6327 equivalent, key selection criteria include its dual-transistor die configuration (BFR360L3-based), low-voltage/low-current operation (VCEO = 6 V, IC = 35 mA), and verified RF performance at 1.8 GHz and 3 GHz under 50 Ω terminations.

Technical Context

The BFS360L6 integrates two identical NPN RF transistors on a single die, each optimized for low-noise amplification and oscillator design. Its fT of 14 GHz and Ccb of 0.3 pF support stable high-frequency operation up to 3.5 GHz while maintaining low inter-electrode capacitance and minimal feedback.

Designed for biasing at VCE = 3 V and IC = 15 mA, it achieves Fmin = 1.0 dB at 1.8 GHz with ZS = ZSopt, and delivers IP3 = 24 dBm and P-1dB = 9 dBm under 50 Ω source/load conditions - confirming suitability for linear RF front-end stages in narrowband wireless systems.

Key Specifications

Pinout & Package

TSLP-6-1 is a thermally enhanced, leadless surface-mount package with 0.5 mm pitch and exposed thermal pad. Dimensions: 1.6 × 1.2 × 0.4 mm (L × W × H). Designed for high-frequency PCB layout with minimized parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-NPN RF transistor applications.

Compared with BFR360L3 E6327 and NE68133, the BFS360L6 E6327 uniquely combines dual-transistor integration, 14 GHz fT, and sub-1 dB noise figure - making it optimal for space-constrained, high-linearity 1.8–3.5 GHz RF front ends where layout symmetry and noise performance are critical.

Availability

BFS360L6 E6327 is available at Aetrix Electronics and suitable for cellular front-end LNAs, ISM-band oscillators, and GPS/GNSS receiver modules requiring stable component supply and consistent RF performance across production lots.

Supply support for BFS360L6 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with leadership in silicon RF transistor technology since the 1990s.

The BFS360L6 belongs to Infineon's BFR/BFS series of high-frequency silicon transistors, engineered specifically for low-noise, high-gain RF amplification and oscillator functions in sub-6 GHz wireless infrastructure and portable devices.

FAQ

What is the recommended bias condition for minimum noise figure?

For Fmin = 1.0 dB at 1.8 GHz, bias BFS360L6 E6327 at IC = 3 mA and VCE = 3 V with source impedance ZS = ZSopt ≈ 25 + j15 Ω. This condition is validated in the datasheet's noise parameter table and requires precise microstrip matching networks on FR4 or RF laminate substrates.

Can BFS360L6 E6327 be used in a cascode configuration?

Yes - its dual-transistor structure supports internal cascoding: use TR1 as common-emitter driver (pins 1,2,6) and TR2 as common-base output stage (pins 3,4,5). This configuration improves reverse isolation and bandwidth beyond 3 GHz while leveraging matched device characteristics.

Is the TSLP-6-1 package compatible with standard reflow profiles?

Yes - TSLP-6-1 meets JEDEC J-STD-020D moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C. The exposed thermal pad must be soldered to ≥25 mm² of inner-layer copper pour with ≥4 thermal vias (0.3 mm diameter) for reliable thermal performance.

How does the dual-die construction affect thermal coupling between transistors?

Thermal coupling is significant: both transistors share the same silicon die and thermal pad. Under 15 mA per transistor, junction temperature rise exceeds 40 K - requiring derating to ≤10 mA per device in continuous-wave operation or active thermal management via PCB copper area.