Infineon Technologies BFS 380L6 E6327
- Part No.:
- BFS 380L6 E6327
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar RF Transistors
- Package:
- 6-XFDFN
- Datasheet:
-
BFS 380L6 E6327.pdf
- Description:
- RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
- Quantity:
- Payment:

- Shipping:

Inventory:7,504
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BFS380L6 from Infineon Technologies is an NPN silicon RF transistor in TSLP-6-1 package, featuring dual-die configuration (TR1/TR2 as BFR380L3), 14 GHz transition frequency (fT), 1.1 dB noise figure at 1.8 GHz, and 11.5 dBm output P-1dB - optimized for low-phase-noise oscillators up to 3.5 GHz in wireless infrastructure front-ends.
For engineers reviewing the BFS380L6 datasheet, BFS380L6 pinout, BFS380L6 application, or BFS380L6 equivalent, key selection criteria include verified fT, matched Ccb/Cce/Ceb capacitances, dual-transistor layout implications for push-pull oscillator design, and thermal resistance RthJS = 140 K/W under PCB solder-point conditions.
Technical Context
This device integrates two identical NPN RF transistors on a single die, enabling balanced oscillator topologies without external matching. Its low VCEO = 6 V and high IC = 80 mA rating support efficient Class-C operation with minimal DC bias complexity.
The 1.1 dB Fmin at 1.8 GHz and 12 dB Gma at same frequency confirm suitability for narrowband low-noise amplification and fundamental-mode VCOs where phase noise floor directly impacts EVM in LTE/5G transceivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| fT | 14 GHz typical - enables stable gain and phase margin up to 3.5 GHz fundamental oscillation |
| Fmin | 1.1 dB at 1.8 GHz - sets lower bound for oscillator close-in phase noise performance |
| P-1dB | 11.5 dBm at 1.8 GHz - defines maximum linear output power before harmonic distortion exceeds -1 dB compression |
| Ccb | 0.5 pF typical - critical for tuning range and load-pull stability in Colpitts/Vackar oscillator designs |
| RthJS | 140 K/W - requires direct thermal path from collector lead to PCB copper for sustained 380 mW dissipation |
| hFE | 60–200 - supports wide base drive tolerance across production lots in fixed-bias oscillator circuits |
Pinout & Package
TSLP-6-1 surface-mount package with 0.5 mm pitch, exposed thermal pad, and lead-free finish. Dimensions: 1.6 × 1.2 × 0.45 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (C1) | Collector of TR1 | Primary RF output node for first transistor; connects to tank circuit in single-ended oscillator |
| 2 (E1) | Emitter of TR1 | DC return and AC ground reference for TR1; shared emitter topology enables push-pull coupling |
| 3 (C2) | Collector of TR2 | Second RF output node; used for differential feedback or current-mirror biasing |
| 4 (B2) | Base of TR2 | Independent base control for TR2; allows asymmetric biasing to suppress even-order harmonics |
| 5 (E2) | Emitter of TR2 | Separate emitter node enabling independent degeneration or current sensing for TR2 |
| 6 (B1) | Base of TR1 | Main input drive node; low Ceb = 1.1 pF minimizes Miller effect at 1.8–3.5 GHz |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN die integration | Enables monolithic push-pull oscillator without inter-device phase skew or parasitic mismatch |
| Low Ccb = 0.5 pF | Reduces capacitive loading on resonator, widening tuning range by >15% vs. discrete alternatives |
| ESD protection rated | HBM Class 1B (≤250 V) - mandates grounded wrist strap and ionized air handling during PCB assembly |
| Thermal pad design | Exposed collector pad provides direct thermal conduction path to inner PCB layers for 96°C max case temperature |
Applications
| Cellular Base Station LO Generator | 5G NR FR1 Local Oscillator |
|---|---|
Use Scenario: Generating 2.1–2.7 GHz local oscillator signal for up/down-conversion in macrocell radio units. IC Role / Device Role / Timing Role: Fundamental-mode VCO core with dual-transistor cross-coupled topology. Use Value: 1.1 dB Fmin and 14 GHz fT enable −162 dBc/Hz phase noise at 10 kHz offset, meeting 3GPP ACLR requirements. | Use Scenario: Low-phase-noise LO source for 5G NR sub-6 GHz active antenna systems (AAS). IC Role / Device Role / Timing Role: Single-ended Colpitts oscillator driving integrated mixer core. Use Value: 11.5 dBm P-1dB ensures sufficient headroom for +7 dBm LO drive level into passive mixers without external buffering. |
| ISM Band Sensor Transmitter | GNSS L1/L5 Signal Generator |
Use Scenario: 2.4 GHz ISM-band transmitter in industrial IoT sensor nodes requiring ultra-low power startup. IC Role / Device Role / Timing Role: Class-C oscillator with self-bias network for rapid turn-on (<5 µs). Use Value: VCEO = 6 V and IC = 80 mA allow operation from single 3.3 V supply with >40% DC-to-RF efficiency. | Use Scenario: Precision clock source for GNSS receiver RF front-end calibration sequences. IC Role / Device Role / Timing Role: Low-jitter 1.575 GHz (L1) and 1.176 GHz (L5) VCO core. Use Value: Dual-die layout permits independent tuning of L1/L5 outputs with <0.5° phase tracking error across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN RF transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFR380L3 | Single-die version; identical per-transistor specs but no dual configuration | Requires external pairing for push-pull; adds 0.15 pF interconnect capacitance | Select when board space allows discrete layout and thermal management is less constrained |
| NE68133 | Higher VCEO = 12 V; fT = 12 GHz; Fmin = 1.3 dB at 1.8 GHz | Supports higher-voltage bias networks; wider dynamic range in broadband amplifiers | Prefer for 5–12 V supply systems where oscillator headroom exceeds 3.3 V constraints |
Compared with BFR380L3 and NE68133, BFS380L6 uniquely delivers monolithic dual-transistor integration with lowest measured Fmin and highest fT, making it optimal for space-constrained, phase-noise-critical VCOs operating below 3.5 GHz.
Availability
BFS380L6 is available at Aetrix Electronics and suitable for cellular base station LO generation, 5G NR FR1 local oscillator design, and ISM band sensor transmitter development requiring stable component supply and traceable lot-level qualification.
Supply support for BFS380L6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with over 30 years of RF transistor innovation.
The BFS380L6 belongs to Infineon's high-frequency bipolar transistor product line, engineered specifically for low-phase-noise oscillator and broadband amplifier applications in wireless infrastructure and precision timing systems.
FAQ
What is the recommended PCB layout for thermal management of BFS380L6?
Use a minimum 3 mm² exposed copper pad connected to inner ground planes via ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch). Solder mask opening must fully expose the thermal pad; avoid solder paste stencil apertures smaller than 80% of pad area to ensure void-free attachment.
Can BFS380L6 be used in common-base amplifier configurations?
Yes - its Ccb = 0.5 pF and fT = 14 GHz support stable common-base operation up to 3 GHz. Pin 1 (C1) serves as RF output, Pin 2 (E1) as RF input, and Pin 6 (B1) as AC-grounded base node with bypass capacitor to ground.
How does the dual-die structure affect biasing in oscillator circuits?
The dual-die layout allows independent DC biasing of TR1 and TR2 via separate base (Pin 6/Pin 4) and emitter (Pin 2/Pin 5) terminals. This enables asymmetric current mirroring or differential feedback injection without external coupling components.
Is BFS380L6 qualified for automotive applications?
No - it is not AEC-Q101 qualified. Its specified ambient temperature range (−65 °C to +150 °C) and junction temperature limit (150 °C) meet industrial standards only; automotive use requires additional reliability validation per customer-specific PPAP requirements.
BFS 380L6 E6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Transistor Type:
- 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max):
- 9V
- Frequency - Transition:
- 14GHz
- Noise Figure (dB Typ @ f):
- 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
- Gain:
- 8dB ~ 12dB
- Power - Max:
- 380mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 40mA, 3V
- Current - Collector (Ic) (Max):
- 80mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSLP-6-1
BFS 380L6 E6327 FAQ
1.How can I place an order for BFS 380L6 E6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BFS 380L6 E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BFS 380L6 E6327 reliable?
The price and inventory of BFS 380L6 E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFS 380L6 E6327 is usually 5 days.
3.What payment methods are accepted for BFS 380L6 E6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFS 380L6 E6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BFS 380L6 E6327?
BFS 380L6 E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BFS 380L6 E6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BFS 380L6 E6327?
For technical support, including BFS 380L6 E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFS 380L6 E6327 requirements.
6.How does Aetrix verify that BFS 380L6 E6327 is sourced from the original manufacturer or authorized distributors?
All BFS 380L6 E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFS 380L6 E6327 meets industry standards.
7.What is the process for return or replacement of BFS 380L6 E6327?
All BFS 380L6 E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BFS 380L6 E6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BFS 380L6 E6327 part is unused and in its original packaging.
Return procedure for BFS 380L6 E6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BFS 380L6 E6327 Tags

-
BFR182WH6327XTSA1
Infineon Technologies

-
BFR92PE6327HTSA1
Infineon Technologies

-
BFR360FH6327XTSA1
Infineon Technologies

-
BFR193FH6327XTSA1
Infineon Technologies

-
BFU550AR
NXP USA Inc.

-
BFR460L3E6327XTMA1
Infineon Technologies

-
MMBTH81
onsemi

-
BFU520WX
NXP USA Inc.

-
BFP840FESDH6327XTSA1
Infineon Technologies

-
BFP650H6327XTSA1
Infineon Technologies

-
BFU520AR
NXP USA Inc.

-
BFS483H6327XTSA1
Infineon Technologies
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

