Infineon Technologies BFS 460L6 E6327

Overview

BFS460L6 from Infineon Technologies is an NPN silicon RF twin transistor in a TSLP-6-1 leadless package, integrating two matched BFR460L3 die. It delivers f_T = 22 GHz (typ), noise figure = 1.1 dB at 1.8 GHz, and V_CEO = 4.5 V, targeting low-voltage VCO modules and low-noise amplifier stages in 1.8–3 GHz wireless front-ends.

For engineers reviewing the BFS460L6 datasheet, BFS460L6 pinout, BFS460L6 application, or BFS460L6 equivalent, key selection criteria include its dual-transistor configuration, 0.33 pF C_cb (typ), 14.5 dB G_ms at 1.8 GHz, 28 dBm OIP3, and ESD-hardened TSLP-6-1 footprint for space-constrained RF signal chains.

Technical Context

This RF twin transistor integrates two independent NPN devices on a single die with shared thermal path and matched characteristics-enabling balanced VCO core topologies and cascode LNA configurations. Its f_T ≥ 16 GHz (min) and C_cb ≤ 0.5 pF support stable gain up to 3 GHz while maintaining low intermodulation distortion.

The device operates at V_CE = 3 V with I_C = 20 mA for maximum stable gain (G_ms) optimization, and its 1.1 dB noise figure at 1.8 GHz is achieved under Z_S = Z_Sopt, confirming suitability for receiver front-end amplification where noise floor minimization is critical.

Key Specifications

Pinout & Package

TSLP-6-1: 1.3 mm × 0.8 mm × 0.37 mm leadless package with exposed thermal pad; 0.4 mm pitch; JEDEC-compliant wettable flank profile for automated optical inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF transistor applications.

Compared with BFR460L3 and MMA040407-12, BFS460L6 uniquely combines dual-transistor integration, 22 GHz f_T, and sub-1.5 dB noise figure in a 1.3×0.8 mm footprint-making it optimal for miniaturized, high-linearity 1.8–3 GHz consumer RF modules where board space and noise performance are co-constrained.

Availability

BFS460L6 is available at Aetrix Electronics and suitable for cellular front-end design, VCO module development, and ISM-band receiver implementation requiring stable component supply across high-mix production runs.

Supply support for BFS460L6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon bipolar and RF-SOI process technologies.

The BFS460L6 belongs to Infineon's high-frequency bipolar transistor product line, engineered specifically for miniaturized, low-noise, and high-linearity RF signal conditioning in portable wireless systems.

FAQ

What is the recommended bias condition for achieving minimum noise figure?

Minimum noise figure (1.1 dB at 1.8 GHz) is achieved at I_C = 5 mA, V_CE = 3 V with source impedance matched to Z_Sopt = 21 − j12 Ω. This requires external matching network design-not fixed internal bias. The device does not integrate bias resistors or regulators.

Can BFS460L6 be used in Class-C oscillator configurations?

Yes-its f_T ≥ 16 GHz and low C_cb support stable Class-C operation up to 3 GHz. The dual-transistor layout enables complementary cross-coupled topologies; however, harmonic termination must be implemented externally via PCB traces or discrete components.

Is the TSLP-6-1 package compatible with standard reflow profiles?

Yes-the TSLP-6-1 package is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports peak reflow temperatures up to 260°C. Its wettable flanks enable automated optical solder-joint inspection without X-ray.

How is thermal performance affected when only one transistor is used?

When only TR1 is active, junction-to-solder-point thermal resistance remains ≤230 K/W, but effective power dissipation is halved. The shared die substrate still conducts heat from the active transistor to the thermal pad, so derating is not required beyond standard P_tot = 200 mW limits.