Infineon Technologies BFS 481 E6327

Overview

BFS481 E6327 from Infineon Technologies is a low-noise silicon bipolar RF transistor featuring two galvanically isolated transistors in one SOT363 package, f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz, and V_CEO = 12 V, designed for broadband RF amplifier stages in mobile front-ends.

For engineers reviewing the BFS481 E6327 datasheet, BFS481 E6327 pinout, BFS481 E6327 application, or BFS481 E6327 equivalent, key selection criteria include noise figure at 900 MHz/1.8 GHz, transition frequency under 10 mA bias, dual-transistor isolation integrity, and thermal resistance (R_thJS = 380 K/W) for compact RF layout.

Technical Context

The BFS481 E6327 integrates two independent NPN RF transistors sharing a common SOT363 thermally optimized leadframe, enabling differential or cascode configurations without external isolation. Its f_T ≥ 6 GHz (typ. 8 GHz) and C_cb = 0.23 pF (typ.) support stable gain up to 2 GHz with minimal parasitic coupling.

DC current gain h_FE ranges 70–140 at I_C = 5 mA/V_CE = 8 V, while NF_min = 0.9 dB (900 MHz) and G_ms = 20 dB confirm suitability for LNA input stages requiring high signal-to-noise ratio and impedance-matched stability.

Key Specifications

Pinout & Package

SOT363 (SC-70-6) package with visible leads, Pb-free and halogen-free, qualified per AEC-Q101.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFP640FESD and MMA040407-12, the BFS481 E6327 uniquely balances dual-transistor integration, 8 GHz f_T, and sub-1 dB noise at 900 MHz-making it optimal for space-constrained dual-band cellular front-ends requiring isolation and thermal robustness.

Availability

BFS481 E6327 is available at Aetrix Electronics and suitable for GSM/UMTS front-ends, automotive telematics modules, and dual-path GNSS receivers requiring stable component supply over extended production cycles.

Supply support for BFS481 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification infrastructure.

The BFS481 belongs to Infineon's RF bipolar transistor product line, engineered specifically for high-linearity, low-noise amplification in wireless communication front-ends up to 2 GHz.

FAQ

What is the maximum recommended collector current for continuous operation?

The absolute maximum collector current is 20 mA, but for reliable long-term operation with thermal margin, Infineon specifies I_C ≤ 12 mA in low-noise amplifier applications. At I_C = 5 mA, h_FE and NF_min are characterized and guaranteed, making this the preferred bias point for most RF designs.

Does the BFS481 E6327 support DC-coupled differential configurations?

Yes - the galvanic isolation between the two transistors allows independent DC bias networks for each emitter-base-collector path. The SOT363 pinout separates E1/B1/C1 from E2/B2/C2, enabling true differential pair implementation without shared emitter degeneration or coupling capacitors.

Is thermal derating required above 25 °C ambient?

Yes - total power dissipation must be linearly derated above T_S = 83 °C, with R_thJS = 380 K/W defining the slope. For example, at T_S = 100 °C, P_tot must be reduced to approximately 115 mW to maintain junction temperature ≤ 150 °C.

Can the BFS481 E6327 replace the older BFS480 in existing designs?

Yes - the BFS481 E6327 is a direct functional upgrade of the BFS480, offering identical SOT363 pinout, improved f_T (8 GHz vs. 6 GHz), lower NF_min (0.9 dB vs. 1.1 dB), and AEC-Q101 qualification. No layout or bias changes are needed for drop-in replacement.