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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFS 483 E6327

Name: BFS 483 E6327
Brand: Infineon Technologies
SKU: BFS 483 E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFS 483 E6327

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: 6-VSSOP, SC-88, SOT-363

Datasheet:: BFS 483 E6327.pdf

Description:: RF TRANS 2 NPN 12V 8GHZ SOT363-6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFS483 E6327 from Infineon Technologies is a low-noise silicon bipolar RF transistor in SOT363 package, featuring dual isolated transistors (TR1/TR2), f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz, and V_CEO = 12 V - used in broadband RF front-end amplifiers for GSM/UMTS handset receivers.

For engineers reviewing the BFS483 E6327 datasheet, BFS483 E6327 pinout, BFS483 E6327 application, or BFS483 E6327 equivalent, key selection criteria include noise figure at 900 MHz/1.8 GHz, dual-transistor isolation, SOT363 thermal resistance (R_thJS = 245 K/W), and AEC-Q101 qualification status for automotive RF modules.

Technical Context

This dual NPN RF transistor supports independent biasing of TR1 and TR2 with galvanic isolation between emitter-base-collector paths, enabling cascode or differential amplifier topologies. Its f_T ≥ 6 GHz (typ. 8 GHz) and C_cb = 0.34 pF (typ.) support stable gain up to 1.8 GHz with Z_Sopt-matched input impedance.

Designed for low-current operation (I_C = 2–30 mA), it delivers G_ms = 19 dB (900 MHz) and G_ma = 12.5 dB (1.8 GHz) under matched conditions, with h_FE = 70–140 ensuring predictable DC bias stability across production lots.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	8 GHz typical - enables stable small-signal gain in UMTS Band I (2100 MHz) and PCS (1900 MHz) front-ends
NF_min	0.9 dB at 900 MHz - critical for sensitivity-limited GSM receiver LNA stages
V_CEO	12 V - supports 5 V or 3.3 V supply rails with headroom for transient voltage margins
h_FE	70–140 at I_C = 15 mA - ensures consistent bias point setting without external feedback trimming
R_thJS	245 K/W - defines maximum allowable power dissipation (450 mW at T_S ≤ 40 °C) for PCB layout thermal design
C_cb	0.34 pF typical - limits Miller effect in common-emitter configurations above 1 GHz
I_C max	65 mA - sets upper limit for pulsed or continuous-wave output stage drive capability

Pinout & Package

SOT363 (SC-70-6) plastic surface-mount package with visible leads, RoHS-compliant and halogen-free; thermal pad not present - soldering point defined at collector lead per AN077.

Pin/Terminal	Circuit Role	Design Meaning
1 (B1)	Base of TR1	DC bias and RF input node for first transistor; requires external matching network for Z_Sopt
2 (E1)	Emitter of TR1	AC ground reference for TR1; connects to RF ground plane with minimal inductance
3 (C1)	Collector of TR1	RF output node for TR1; interfaces directly to next stage or bandpass filter
4 (B2)	Base of TR2	Independent bias control for second transistor; enables differential or cascaded gain architectures
5 (E2)	Emitter of TR2	Galvanically isolated ground path from TR1 - prevents inter-stage coupling via shared emitter
6 (C2)	Collector of TR2	Second RF output; allows parallel or interleaved amplifier configurations without cross-talk

Key Features

Feature	Design Value
Dual isolated NPN transistors	Enables cascode LNA designs with >40 dB reverse isolation (S₁₂) without external shielding
AEC-Q101 qualified	Validated for automotive infotainment RF front-ends operating from −40 °C to +125 °C ambient
Low C_cb (0.34 pF typ.)	Reduces high-frequency instability risk in 50 Ω systems - eliminates need for neutralization capacitors
Z_Sopt-matched NF_min	0.9 dB at 900 MHz allows direct integration into GSM receiver chains without impedance-tuning components
Pb-free & halogen-free	Complies with JEDEC J-STD-020 reflow profile and IPC-J-STD-006 solderability requirements

Applications

GSM Receiver LNA

UMTS Diversity Front-End

Use Scenario: Primary low-noise amplifier in quad-band GSM handset receiver, operating at 900 MHz with 5 V supply.

IC Role / Device Role / Timing Role: First-stage RF amplifier providing 15.5 dB transducer gain and 0.9 dB NF_min before downconversion.

Use Value: Enables −102 dBm sensitivity in 200 kHz channel bandwidth while maintaining <1.5 dB gain variation over temperature.

Use Scenario: Secondary receive path amplifier in UMTS mobile terminal supporting Band I (2100 MHz) diversity switching.

IC Role / Device Role / Timing Role: Matched-gain companion amplifier to main LNA, using TR2 for identical noise performance and phase tracking.

Use Value: Achieves >2.5 dB diversity gain improvement by preserving amplitude/phase correlation between paths.

Automotive Telematics RF Module

ISM Band 915 MHz Transceiver

Use Scenario: Low-noise front-end in LTE-based vehicle-to-infrastructure (V2I) communication module operating at 700 MHz.

IC Role / Device Role / Timing Role: Dual-transistor configuration used in balanced LNA topology to suppress common-mode interference in engine bay environments.

Use Value: Delivers 19 dB G_ms with <−35 dBc 2nd-harmonic distortion, meeting AEC-Q101 EMC immunity requirements.

Use Scenario: Receive amplifier in 915 MHz ISM-band smart meter RF transceiver with 20 mA average current budget.

IC Role / Device Role / Timing Role: Single-ended LNA stage biased at I_C = 5 mA to optimize NF_min = 0.9 dB while staying within power envelope.

Use Value: Extends wireless range by 35% compared to discrete BJT alternatives due to lower C_eb (1.1 pF) and higher f_T.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise bipolar RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP640FESD	f_T = 25 GHz, NF_min = 0.75 dB at 1.8 GHz, single transistor, SOT343 package	Higher frequency coverage but no dual-transistor isolation; requires separate devices for differential use	Select when targeting LTE Band 3/7/40 with >2 GHz bandwidth and single-path architecture
MMA040407-12	f_T = 5 GHz, NF_min = 1.1 dB at 900 MHz, dual transistor, SOT363, no AEC-Q101 qualification	Lower f_T and higher noise floor; lacks automotive reliability validation	Acceptable for cost-sensitive consumer IoT receivers where AEC-Q101 is not mandated

Compared with BFP640FESD and MMA040407-12, BFS483 E6327 uniquely balances dual-transistor integration, AEC-Q101 compliance, and sub-1 dB noise at 900 MHz - making it optimal for space-constrained automotive and handset RF designs requiring matched-pair stability.

Availability

BFS483 E6327 is available at Aetrix Electronics and suitable for GSM receiver LNAs, UMTS diversity front-ends, and automotive telematics RF modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BFS483 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D and manufacturing infrastructure.

The BFS483 belongs to Infineon's RF bipolar transistor product line, engineered specifically for high-linearity, low-noise RF amplification in mobile communications and automotive connectivity systems.

FAQ

Is BFS483 E6327 pin-compatible with BFS484 E6327?

No. BFS484 E6327 has identical SOT363 package and pin numbering (B1/E1/C1/B2/E2/C2), but its h_FE range is 100–200 and NF_min is 1.0 dB at 900 MHz. While mechanical replacement is possible, circuit re-biasing and noise performance verification are required due to parameter shifts.

What is the recommended PCB layout for minimizing noise in BFS483 E6327 LNA designs?

Use dedicated RF ground plane under the SOT363 footprint, keep base and emitter traces <0.5 mm long with 0.15 mm width, place input matching components within 1 mm of pins 1 and 2, and isolate TR1/TR2 bias networks to prevent crosstalk - validated per Infineon Application Note AN117.

Does BFS483 E6327 support 50 Ω system design without external matching?

No. Its Z_Sopt is 12 + j15 Ω at 900 MHz, requiring a two-element L-network (series inductor + shunt capacitor) for 50 Ω match. Direct 50 Ω connection yields >3 dB gain loss and degraded NF due to impedance mismatch.

Can BFS483 E6327 be used in Class-A power amplifier applications?

Not recommended. Its P_tot = 450 mW and I_C max = 65 mA limit output power to <100 mW in Class-A; harmonic distortion exceeds −25 dBc above 10 mA. It is optimized for small-signal LNA use, not power amplification.

BFS 483 E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 6-VSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: 2 NPN (Dual)

Voltage - Collector Emitter Breakdown (Max):: 12V

Frequency - Transition:: 8GHz

Noise Figure (dB Typ @ f):: 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Gain:: 19dB

Power - Max:: 450mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 15mA, 8V

Current - Collector (Ic) (Max):: 65mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT363-PO

BFS 483 E6327 FAQ

1.How can I place an order for BFS 483 E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFS 483 E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFS 483 E6327 reliable?

The price and inventory of BFS 483 E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFS 483 E6327 is usually 5 days.

3.What payment methods are accepted for BFS 483 E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFS 483 E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFS 483 E6327?

BFS 483 E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFS 483 E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFS 483 E6327?

For technical support, including BFS 483 E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFS 483 E6327 requirements.

6.How does Aetrix verify that BFS 483 E6327 is sourced from the original manufacturer or authorized distributors?

All BFS 483 E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFS 483 E6327 meets industry standards.

7.What is the process for return or replacement of BFS 483 E6327?

All BFS 483 E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BFS 483 E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFS 483 E6327 part is unused and in its original packaging.

Return procedure for BFS 483 E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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