Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors BFT92,215

Part No.:
BFT92,215
Manufacturer:
NXP Semiconductors
Category:
Bipolar RF Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBFT92,215.pdf
Description:
RF TRANS PNP 15V 5GHZ TO236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,985

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BFT92 from NXP Semiconductors is a PNP silicon RF transistor in SOT23 package, designed for high-frequency wideband amplification up to 5 GHz. It delivers 18 dB maximum unilateral power gain at 500 MHz, 2.5 dB noise figure, and −60 dB intermodulation distortion under specified RF conditions, enabling use in aerial amplifiers, spectrum analyzers, and radar front-ends.

For engineers reviewing the BFT92 datasheet, BFT92 pinout, BFT92 application, or BFT92 equivalent, this page provides verified technical context, validated SOT23 pin mapping, confirmed RF performance at 500 MHz and 5 GHz, thermal resistance (260 K/W), and direct PNP-wideband alternatives with documented parameter divergence.

Technical Context

The BFT92 operates as a high-frequency PNP bipolar junction transistor optimized for wideband small-signal amplification. Its 5 GHz transition frequency (fT) and low feedback capacitance (0.7 pF) support stable gain and minimal phase distortion across VHF/UHF bands.

It requires negative biasing: VCEO = −15 V, VCBO = −20 V, and operates with DC collector current up to −25 mA. Thermal design must respect Rth j–s = 260 K/W and maximum junction temperature of 175 °C.

Key Specifications

Parameter Value and Actual Design Meaning
fT 5 GHz - enables stable amplification up to UHF band without gain roll-off
GUM 18 dB - usable small-signal power gain at 500 MHz under matched 75 Ω conditions
F 2.5 dB - low noise figure critical for receiver front-end sensitivity
dim −60 dB - intermodulation distortion measured per DIN 45004B at 493.25 MHz
Cre 0.7 pF - low feedback capacitance ensures unconditional stability in wideband designs
Ptot 300 mW - total dissipation limit at solder point temperature ≤95 °C
Rth j–s 260 K/W - thermal resistance from junction to soldering point defines heatsinking requirement

Pinout & Package

Package: SOT23 (TO-236AB), plastic surface-mounted, 3-lead package with standard footprint (D = 3.0 mm, E = 2.8 mm, e = 1.9 mm).

Pin/Terminal Circuit Role Design Meaning
1 Base Control terminal for forward-active bias; requires negative voltage relative to emitter
2 Emiter Current source terminal; connected to most negative potential in PNP configuration
3 Collector Output terminal; carries amplified RF signal and dissipates heat via tab (Rth j–s = 260 K/W)

Key Features

Feature Design Value
Wideband RF amplification Operates linearly from VHF through 5 GHz with flat gain response and low distortion
Low-noise PNP architecture 2.5 dB noise figure at 500 MHz enables high-sensitivity receiver front-end implementation
High fT / low Cre ratio 5 GHz fT combined with 0.7 pF feedback capacitance supports unconditional stability in broadband matching networks
DIN-compliant intermodulation performance −60 dB dim per DIN 45004B confirms suitability for multi-carrier RF systems with adjacent-channel interference requirements

Applications

Aerial Amplifier Front-End Spectrum Analyzer Input Stage

Use Scenario: Low-noise amplification of terrestrial TV or FM broadcast signals before filtering and downconversion.

IC Role / Device Role / Timing Role: PNP RF small-signal amplifier operating in common-emitter configuration with −10 V collector-emitter bias.

Use Value: 2.5 dB noise figure and −60 dB intermodulation distortion preserve signal integrity in multi-channel reception environments.

Use Scenario: First-stage amplification in portable spectrum analyzers requiring wide dynamic range and minimal added noise.

IC Role / Device Role / Timing Role: Wideband input amplifier covering 100 MHz–1 GHz with 5 GHz fT headroom for harmonic suppression.

Use Value: 18 dB GUM and 0.7 pF Cre enable stable 50 Ω input/output matching without neutralization circuits.

Radar Receiver LNA Oscilloscope Vertical Amplifier

Use Scenario: Low-noise pre-amplification of pulsed RF returns in X-band radar receivers.

IC Role / Device Role / Timing Role: High-linearity PNP transistor biased at −14 mA/−10 V for optimal intermodulation performance.

Use Value: −60 dB dim at 493.25 MHz ensures accurate pulse amplitude fidelity in presence of strong interferers.

Use Scenario: Wideband vertical channel amplification in analog oscilloscopes requiring flat frequency response beyond 500 MHz.

IC Role / Device Role / Timing Role: Small-signal RF amplifier with 5 GHz fT supporting bandwidth extension without peaking compensation.

Use Value: 260 K/W thermal resistance allows reliable operation under continuous high-frequency drive in compact probe interfaces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP wideband RF amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
BFR92 NPN complement; identical fT, GUM, and F specs but opposite polarity biasing and lower |VCEO| (−12 V vs −15 V) Requires redesign of bias network and DC blocking; not drop-in due to polarity reversal Select when NPN topology aligns with existing supply architecture or cascode configurations
MRF901 Higher Ptot (500 mW), higher fT (6 GHz), but larger SOT-223 package and 3× higher Cre (2.1 pF) Supports higher output power but demands revised layout for thermal management and stability compensation Prefer for >100 mW output stages where size and stability margin permit larger footprint

Compared with BFR92 and MRF901, the BFT92 uniquely balances ultra-low intermodulation (−60 dB), compact SOT23 form factor, and PNP polarity-making it irreplaceable in space-constrained, low-distortion, negative-rail RF front-ends where polarity and footprint are fixed constraints.

Availability

BFT92 is available at Aetrix Electronics and suitable for aerial amplifiers, spectrum analyzers, radar receivers, and oscilloscope vertical amplifiers requiring stable component supply across legacy test equipment and broadcast infrastructure programs.

Supply support for BFT92 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in high-performance RF, analog, and mixed-signal solutions for communications, automotive, and industrial markets.

The BFT92 belongs to NXP's legacy RF transistor product line, engineered specifically for wideband, low-noise, high-linearity amplification in test and measurement, broadcast, and radar systems operating up to 5 GHz.

FAQ

What is the maximum operating frequency of the BFT92?

The BFT92 has a transition frequency (fT) of 5 GHz, verified at IC = −14 mA and VCE = −10 V. While usable gain extends into the UHF band, its primary design target is stable wideband amplification up to 500 MHz with 18 dB GUM; actual system bandwidth depends on matching network and bias conditions. The BFT92 remains functional-but with diminishing gain-up to its fT limit.

Is the BFT92 pin-compatible with the BFR92?

No, the BFT92 is not pin-compatible with the BFR92. Although both are SOT23-packaged RF transistors from NXP, the BFT92 is PNP (pin 1 = base, pin 2 = emitter, pin 3 = collector), while the BFR92 is NPN with reversed polarity and different internal pin assignment. Swapping them requires full circuit redesign including bias polarity, DC blocking, and impedance matching-no PCB changes can be avoided.

What is the thermal resistance of the BFT92 and how does it affect layout?

The BFT92 has a thermal resistance from junction to soldering point (Rth j–s) of 260 K/W. This means each watt of dissipated power raises the junction temperature by 260 K above the solder point temperature. To stay within the 175 °C max junction limit, the collector tab must be soldered to adequate copper area-typically ≥25 mm² of 2-oz copper-to maintain Ts ≤95 °C at full 300 mW dissipation. Layout must avoid thermal bottlenecks near pin 3.

Can the BFT92 be used in a 50 Ω system design?

Yes, the BFT92 is routinely deployed in 50 Ω RF systems. Its 18 dB GUM and 2.5 dB noise figure are characterized at 500 MHz with 50 Ω source/load impedances. Matching networks using microstrip stubs or lumped LC elements achieve broadband 50 Ω input/output return loss <10 dB across 100–1000 MHz. The low 0.7 pF Cre simplifies neutralization, making stable 50 Ω operation achievable without complex feedback compensation.

What does the −60 dB intermodulation distortion specification mean for real-world use?

The −60 dB dim value for BFT92 is measured per DIN 45004B under defined two-tone conditions (fp = 495.25 MHz, fq = 503.25 MHz, fr = 505.25 MHz) into a 75 Ω load. In practice, this confirms the BFT92 maintains high linearity in multi-carrier environments-such as cable TV distribution or spectrum monitoring-where third-order intermodulation products must remain ≥60 dB below fundamentals to avoid adjacent-channel interference or measurement error in the BFT92-based amplifier stage.

BFT92,215 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Voltage - Collector Emitter Breakdown (Max):
15V
Frequency - Transition:
5GHz
Noise Figure (dB Typ @ f):
2.5dB @ 500MHz
Gain:
-
Power - Max:
300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 14mA, 10V
Current - Collector (Ic) (Max):
25mA
Operating Temperature:
175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23 (TO-236AB)

BFT92,215 FAQ

1.How can I place an order for BFT92,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFT92,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFT92,215 reliable?

The price and inventory of BFT92,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFT92,215 is usually 5 days.

3.What payment methods are accepted for BFT92,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFT92,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFT92,215?

BFT92,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFT92,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFT92,215?

For technical support, including BFT92,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFT92,215 requirements.

6.How does Aetrix verify that BFT92,215 is sourced from the original manufacturer or authorized distributors?

All BFT92,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFT92,215 meets industry standards.

7.What is the process for return or replacement of BFT92,215?

All BFT92,215 units undergo pre-shipment inspection (PSI). If there is an issue with BFT92,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFT92,215 part is unused and in its original packaging.

Return procedure for BFT92,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BFT92,215 Tags

  • BFT92,215
  • BFT92,215 PDF
  • BFT92,215 Datasheet
  • BFT92,215 Specifications
  • BFT92,215 Images
  • NXP Semiconductors
  • NXP Semiconductors BFT92,215
  • Buy BFT92,215
  • BFT92,215 Price
  • BFT92,215 Distributor
  • BFT92,215 Supplier
  • BFT92,215 Wholesale
Related Products
BFR182WH6327XTSA1
BFR182WH6327XTSA1

Infineon Technologies

BFR92PE6327HTSA1
BFR92PE6327HTSA1

Infineon Technologies

BFR360FH6327XTSA1
BFR360FH6327XTSA1

Infineon Technologies

BFR193FH6327XTSA1
BFR193FH6327XTSA1

Infineon Technologies

BFU550AR
BFU550AR

NXP USA Inc.

BFR460L3E6327XTMA1
BFR460L3E6327XTMA1

Infineon Technologies

MMBTH81
MMBTH81

onsemi

BFU520WX
BFU520WX

NXP Semiconductors

BFP840FESDH6327XTSA1
BFP840FESDH6327XTSA1

Infineon Technologies

BFP650H6327XTSA1
BFP650H6327XTSA1

Infineon Technologies

BFU520AR
BFU520AR

NXP Semiconductors

BFS483H6327XTSA1
BFS483H6327XTSA1

Infineon Technologies

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER